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    AN609

    Abstract: 14106
    Contextual Info: Si7672DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		si7672dpan60921-mar-0714106 PDF

    74385

    Abstract: si7672
    Contextual Info: SPICE Device Model Si7672DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		si7672dp18-jul-0874385si7672 PDF