SI7664 Search Results

Diode RL 4B

Abstract: SI7664DP-T1-E3 TB-17 Si7664DP S-52449-Rev si7664
Contextual Info: Si7664DP New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0031 at VGS = 10 V 40 0.0036 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ) 37 nC D TrenchFETr Power MOSFET D PWM Optimized D New Low Thermal Resistance PowerPAKr

SI7664DP-T1-E3

Abstract: TB-17 Si7664DP si7664
Contextual Info: Si7664DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0031 at VGS = 10 V 40 0.0036 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 37 nC PowerPAK SO-8 • • • • Halogen-free available TrenchFET Power MOSFET RoHS

C25B

Contextual Info: Si7664DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0031 at VGS = 10 V 40 0.0036 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 37 nC PowerPAK SO-8 • • • • Halogen-free available TrenchFET Power MOSFET RoHS

Contextual Info: Si7664DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0031 at VGS = 10 V 40 0.0036 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 37 nC PowerPAK SO-8 • • • • Halogen-free available TrenchFET Power MOSFET RoHS

74149

Abstract: Si7664DP
Contextual Info: SPICE Device Model Si7664DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74149

Abstract: Si7664DP S6018
Contextual Info: SPICE Device Model Si7664DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

73711

Abstract: 6914 59219 AN609 Si7664DP 12866
Contextual Info: Si7664DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si7664DP New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0031 at VGS = 10 V 40 0.0036 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ) 37 nC D TrenchFETr Power MOSFET D PWM Optimized D New Low Thermal Resistance PowerPAKr

q406 transistor

Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Contextual Info: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no