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SI7444DP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI7444DP		Vishay Siliconix	MOSFETs	Original	PDF	59.4KB	5

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Vishay Intertechnologies SI7444DP-T1-GE3 MOSFETs 40V 23.6A 5.4W 6.1mohm @ 10V
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Mouser Electronics	SI7444DP-T1-GE3					1 - 10 - 100 - 1000 - 10000 $1.52	Get Quote
Vishay Intertechnologies SI7444DP-T1-E3 MOSFETs 40V 23.6A 1.9W
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Mouser Electronics	SI7444DP-T1-E3					1 - 10 - 100 - 1000 - 10000 $1.52	Get Quote

SI7444DP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Si7444DP Contextual Info: Si7444DP Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) Qg (Typ) 40 0.0061@ VGS = 10 V 23.6 105 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile	Original	Si7444DP 07-mm Si7444DP-T1--E3 S-51565-Rev. 31-Oct-05	PDF
Si7444DP Contextual Info: Si7444DP Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) Qg (Typ) 40 0.0061 @ VGS = 10 V 23.6 105 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile	Original	Si7444DP 07-mm Si7444DP-T1--E3 S-42058--Rev. 15-Nov-04	PDF
Contextual Info: Si7444DP Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) Qg (Typ) 40 0.0061@ VGS = 10 V 23.6 105 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile	Original	Si7444DP 07-mm Si7444DP-T1--E3 08-Apr-05	PDF
Si7444DP Contextual Info: SPICE Device Model Si7444DP Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si7444DP 18-Jul-08	PDF
Si7444DP Abstract: Si7444DP-T1-E3 Contextual Info: Si7444DP Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 40 0.0061 at VGS = 10 V 23.6 105 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®	Original	Si7444DP Si7444DP-T1-E3 Si7444DP-T1-GE3 18-Jul-08	PDF
Contextual Info: Si7444DP New Product Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 40 0.0061 @ VGS = 10 V 23.6 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile	Original	Si7444DP 07-mm Si7444DP-T1--E3 S-40857--Rev. 03-May-04	PDF
AN609 Abstract: Si7444DP Contextual Info: Si7444DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si7444DP AN609 12-Jan-06	PDF
Contextual Info: Si7444DP Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 40 0.0061 at VGS = 10 V 23.6 105 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®	Original	Si7444DP Si7444DP-T1-E3 Si7444DP-T1-GE3 11-Mar-11	PDF
Contextual Info: Si7444DP Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 40 0.0061 at VGS = 10 V 23.6 105 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®	Original	Si7444DP Si7444DP-T1-E3 Si7444DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: Si7444DP Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) Qg (Typ) 40 0.0061@ VGS = 10 V 23.6 105 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile	Original	Si7444DP 07-mm Si7444DP-T1--E3 18-Jul-08	PDF
Contextual Info: Si7444DP Vishay Siliconix N-Channel 40-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 40 0.0061 at VGS = 10 V 23.6 105 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®	Original	Si7444DP Si7444DP-T1-E3 Si7444DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
q406 transistor Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS Contextual Info: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no	Original	SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS	PDF