SI7415 Search Results

si7415dn-t1-ge3

Contextual Info: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.065 at VGS = - 10 V - 5.7 0.110 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Fast Switching

Contextual Info: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.065 at VGS = - 10 V - 5.7 0.110 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Fast Switching

Contextual Info: SPICE Device Model Si7415DN www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

SI7415DN

Contextual Info: SPICE Device Model Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.065 @ VGS = −10 V −5.7 0.110 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFET D New PowerPAKr Package − Low Thermal Resistance, RthJC − Low 1.07-mm Profile

Contextual Info: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.065 @ VGS = −10 V −5.7 0.110 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFET D New PowerPAKr Package Available − Low Thermal Resistance, RthJC

SI2333DS-T1-E3

Abstract: SI2305DS-T1-E3 Si2333 Si2302ADS-T1-E3 SUP75N06-08-E3 si4486ey-t1-e3 SUP60N06-18-E3 SI2308BDS-T1-E3 SI4488DY-T1-E3 2N7002K
Contextual Info: 2017-2012:QuarkCatalogTempNew 9/11/12 9:38 AM Page 2017 25 Power MOSFETs and Buffered H-Bridge Drivers P-Channel PowerPAK 1212-8 PowerPAK 1212-8 Stock No. Mfr.’s Type SI7415DN-T1-E3 SI7107DN-T1-E3 SI7913DN-T1-E3 Configuration VDS V RDS(on) @ –4.5 V (Ω)

SI7415DN

Contextual Info: Si7415DN New Product Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = –10 V –5.7 0.110 @ VGS = –4.5 V –4.4 D TrenchFETr Power MOSFET D New PowerPAKt Package – Low Thermal Resistance, RthJC

SI7415DN

Contextual Info: SPICE Device Model Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.065 at VGS = - 10 V - 5.7 0.110 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Fast Switching

Contextual Info: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.065 at VGS = - 10 V - 5.7 0.110 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Fast Switching

Si7415DN-T1-GE3

Abstract: SI7415DN
Contextual Info: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.065 at VGS = - 10 V - 5.7 0.110 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Fast Switching

si7415dn-t1-ge3

Abstract: Si7415DN
Contextual Info: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.065 at VGS = - 10 V - 5.7 0.110 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Fast Switching

Contextual Info: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.065 @ VGS = −10 V −5.7 0.110 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFET D New PowerPAKr Package − Low Thermal Resistance, RthJC − Low 1.07-mm Profile

si7415dn-t1-ge3

Contextual Info: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.065 at VGS = - 10 V - 5.7 0.110 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Fast Switching

Contextual Info: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.065 @ VGS = −10 V −5.7 0.110 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFET D New PowerPAKr Package − Low Thermal Resistance, RthJC − Low 1.07-mm Profile

Si7415DN

Contextual Info: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.065 @ VGS = −10 V −5.7 0.110 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFET D New PowerPAKr Package − Low Thermal Resistance, RthJC − Low 1.07-mm Profile

Si7415DN

Contextual Info: SPICE Device Model Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7415DN

Abstract: si7415dn-t1-ge3
Contextual Info: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.065 at VGS = - 10 V - 5.7 0.110 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Fast Switching

SI7415DN

Abstract: S-32405
Contextual Info: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.065 @ VGS = −10 V −5.7 0.110 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFET D New PowerPAKr Package − Low Thermal Resistance, RthJC − Low 1.07-mm Profile

em 234 stepper

Abstract: transistor smd marking cfr transistor BD 222 SMD ffs transistor smd transistor BD 140 working principle in TRANSISTOR BD 168 16 pin ic sgT6 ca6 smd transistor SMD transistor MARKING CODE 213 MOSFET TRANSISTOR SMD MARKING CODE 18A
Contextual Info: TMC260/TMC261/TMC262 DATA SHEET V. 1.10 / 2011-Mar-09 1 TMC260, TMC261, TMC262 Energy saving phase stepper interface and external power and protection high resolution microstep two driver with step and direction internal (TMC260, TMC261) or stage (TMC262) with diagnostics

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

Contextual Info: Electrical Specifications Subject to Change LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater

Sanyo supercapacitors

Abstract: maxwell balancing
Contextual Info: LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater Utilization of Stored Energy in Supercapacitors