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    SI7101 Search Results

    SI7101 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI-71011-F
    		Bel Fuse SI-71011-F Scan PDF 436.79KB 4
    SI7101DN-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 35A PPAK 1212-8 Original PDF 13
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    SI7101 Price and Stock

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    Vishay Siliconix SI7101DN-T1-GE3

    MOSFET P-CH 30V 35A PPAK 1212-8
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    DigiKey () SI7101DN-T1-GE3 Digi-Reel 6,152 1
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    SI7101DN-T1-GE3 Cut Tape 6,152 1
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    New Advantage Corporation SI7101DN-T1-GE3 3,000 1
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    Vishay Intertechnologies SI7101DN-T1-GE3

    P-CHANNEL 30-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 26AK9926)
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    SI7101DN-T1-GE3 Reel 35 Weeks 3,000
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    Mouser Electronics SI7101DN-T1-GE3 122,544
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    Verical SI7101DN-T1-GE3 2,341 125
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    SI7101DN-T1-GE3 Reel 1
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    TME SI7101DN-T1-GE3 1
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    Avnet Asia SI7101DN-T1-GE3 17 Weeks 3,000
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    EBV Elektronik SI7101DN-T1-GE3 36 Weeks 3,000
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    SI7101 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: New Product Si7101DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.0072 at VGS = - 10 V - 35d 0.0130 at VGS = - 4.5 V - 35d • TrenchFET Power MOSFET • 100% Rg and UIS Tested • Material categorization:


    Original     		Si7101DN Si7101DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product Si7101DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.0072 at VGS = - 10 V - 35d 0.0130 at VGS = - 4.5 V - 35d • TrenchFET Power MOSFET • 100% Rg and UIS Tested • Material categorization:


    Original     		Si7101DN Si7101DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SPICE Device Model Si7101DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		Si7101DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: É"1! fiy r r ì_ T /smon_ /y n n n T /snnn_ /snnn T /snnn_ /snnn T /smnn_ 10OOpF, 2KV NOTES: a SHIELD GROUND 1.0 PINS WITHOUT ELECTRICAL CONNECTION ARE OMITTED. ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 1 0 - P 1 1 ' P 1 3 -P 1 2 ’P 1 5 -P 1 4 )


    OCR Scan     		10OOpF, 100KHz, SI-71010 PDF