SI6963 Search Results

Si6963BDQ

Contextual Info: Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.9 0.080 at VGS = - 2.5 V - 3.0 • Halogen-free RoHS COMPLIANT S2 S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6963BDQ G2

Contextual Info: Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.9 0.080 at VGS = - 2.5 V - 3.0 • Halogen-free RoHS COMPLIANT S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6963BDQ S2 G2

Contextual Info: Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.9 0.080 at VGS = - 2.5 V - 3.0 • Halogen-free RoHS COMPLIANT S2 S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6963BDQ G2

Si6963DQ

Contextual Info: Si6963DQ Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) –20 rDS(on) (W) ID (A) 0.050 @ VGS = –4.5 V "3.5 0.085 @ VGS = –2.5 V "2.7 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 D Si6963DQ 8 7 6 5 G1 D2 S2 S2 G2 G2 Top View D1 D2 P-Channel MOSFET

Si6963BDQ

Abstract: 7277-2
Contextual Info: Si6963BDQ Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 20 rDS(on) (W) ID (A) 0.045 @ VGS = −4.5 V −3.9 0.080 @ VGS = −2.5 V −3.0 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 D Si6963BDQ G1 8 D2 7 S2 G2 6 S2 5 G2

Contextual Info: T e m ic Si6963DQ Semiconductors Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) Id (A) ±3.5 ±2.7 rDS(on) (£2) 0.050 @ VGs = -4.5 V 0.085 @ VGs = -2.5 V 20 Si S2 o p 6 6 P-Channel MOSFET P-Channel MOSFET TSSOP-8 Si6963DQ Top View Di D2

Si6963BDQ

Contextual Info: Si6963BDQ Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 20 rDS(on) (W) ID (A) 0.045 @ VGS = −4.5 V −3.9 0.080 @ VGS = −2.5 V −3.0 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 D Si6963BDQ G1 8 D2 7 S2 G2 6 S2 5 G2

DIODE marking S4 97

Contextual Info: Si6963DQ Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

Si6963DQ

Contextual Info: SPICE Device Model Si6963DQ Vishay Siliconix Dual P-Channel 2.5-V G-S Rated MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si6963DQ

Contextual Info: Si6963DQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.050 @ VGS = –4.5 V "3.5 0.085 @ VGS = –2.5 V "2.7 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 D Si6963DQ G1 G2 6 S2 5 G2 Top View D1 D2 P-Channel MOSFET

Si6963DQ

Contextual Info: Si6963DQ Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

BUSS SR-5 T3.15A 250V

Abstract: Si6963BDQ Si6963BDQ-T1-E3 Si6963DQ Si6963DQ-T1
Contextual Info: Specification Comparison Vishay Siliconix Si6963BDQ vs. Si6963DQ Description: Dual P-Channel, 2.5 V G-S MOSFET Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6963BDQ-T1 Replaces Si6963DQ-T1 Si6963BDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6963DQ-T1-E3 (Lead (Pb)-free version)

Si6963DQ

Contextual Info: Si6963DQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.050 @ VGS = –4.5 V "3.5 0.085 @ VGS = –2.5 V "2.7 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 D Si6963DQ G1 G2 6 S2 5 G2 Top View D1 D2 P-Channel MOSFET

Contextual Info: Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.9 0.080 at VGS = - 2.5 V - 3.0 • Halogen-free RoHS COMPLIANT S2 S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6963BDQ G2

Si6963BDQ

Abstract: on47
Contextual Info: SPICE Device Model Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si6963BDQ

Contextual Info: Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.9 0.080 at VGS = - 2.5 V - 3.0 • Halogen-free RoHS COMPLIANT S2 S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6963BDQ G2

A1818

Contextual Info: Si6963DQ New Product Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.050 @ VGS = - 4.5 V - 3.5 0.085 @ VGS = - 2.5 V - 2.7 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 G1 8 D2 7 S2 D Si6963DQ G2 6 S2 5 G2 Top View

Si6963BDQ

Contextual Info: Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.9 0.080 at VGS = - 2.5 V - 3.0 • Halogen-free RoHS COMPLIANT S2 S1 TSSOP-8 D1 1 S1 2 S1 3 G1 4 Si6963BDQ G2

7483

Abstract: AN609 Si6963BDQ
Contextual Info: Si6963BDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si6963BDQ

Abstract: on47
Contextual Info: SPICE Device Model Si6963BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si6963DQ

Contextual Info: Si6963DQ New Product Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.050 @ VGS = - 4.5 V - 3.5 0.085 @ VGS = - 2.5 V - 2.7 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 G1 8 D2 7 S2 D Si6963DQ G2 6 S2 5 G2 Top View

Dual P-Channel 2.5-V (G-S) MOSFET

Abstract: MOSFET TSSOP-8 Si6963DQ
Contextual Info: Si6963DQ Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) –20 rDS(on) (W) ID (A) 0.055 @ VGS = –4.5 V "3.2 0.10 @ VGS = –2.5 V "2.4 S1 S2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 D Si6963DQ 8 7 6 5 G1 D2 S2 S2 G2 G2 Top View D1 D2 P-Channel MOSFET

Si6963DQ

Contextual Info: Si6963DQ New Product Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.050 @ VGS = - 4.5 V - 3.5 0.085 @ VGS = - 2.5 V - 2.7 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 G1 8 D2 7 S2 D Si6963DQ G2 6 S2 5 G2 Top View

Contextual Info: Si6963DQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.050 @ VGS = –4.5 V "3.5 0.085 @ VGS = –2.5 V "2.7 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 D Si6963DQ G1 G2 6 S2 5 G2 Top View D1 D2 P-Channel MOSFET