SI6467DQ Search Results

Si6467DQ

Contextual Info: Si6467DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.014 @ VGS = - 4.5 V "8.0 0.019 @ VGS = - 2.5 V "7.0 0.027 @ VGS = - 1.8 V "5.8 S* TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D Si6467DQ G *Source Pins 2, 3, 6 and 7

Contextual Info: SI6467DQ VISHAY Siliconix P-Channel 1.8-V G-S MOSFET New Product so TSSOP-8 D S D Si6467DQ 'Source Pins 2, 3, 6 and 7 must be tied common S S S G D Top View 6 D A B S O L U T E M A X IM U M R A T IN G S (TA = 2 5 ° C U N LE S S O T H E R W IS E N O TED )

Si6467DQ

Contextual Info: SPICE Device Model Si6467DQ Vishay Siliconix P-Channel 108-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si6467DQ P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

Contextual Info: Si6467DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.014 @ VGS = - 4.5 V "8.0 0.019 @ VGS = - 2.5 V "7.0 0.027 @ VGS = - 1.8 V "5.8 S* TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D Si6467DQ G *Source Pins 2, 3, 6 and 7

Si6467DQ

Contextual Info: Si6467DQ P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

Si6467DQ

Contextual Info: Si6467DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.014 @ VGS = –4.5 V "8.0 0.019 @ VGS = –2.5 V "7.0 0.027 @ VGS = –1.8 V "5.8 S* TSSOP-8 D 8 D 7 S 3 6 S 4 5 D 1 S 2 S G D Si6467DQ G *Source Pins 2, 3, 6 and 7

Si6467BDQ-T1-E3

Abstract: DIODE TA 70/40 Si6467BDQ Si6467DQ Si6467DQ-T1 72900
Contextual Info: Specification Comparison Vishay Siliconix Si6467BDQ vs. Si6467DQ Description: P-Channel, 1.8 V G-S MOSFET Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6467BDQ-T1 Replaces Si6467DQ-T1 Si6467BDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6467DQ-T1

Si6467DQ

Contextual Info: Si6467DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.014 @ VGS = - 4.5 V "8.0 0.019 @ VGS = - 2.5 V "7.0 0.027 @ VGS = - 1.8 V "5.8 S* TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D Si6467DQ G *Source Pins 2, 3, 6 and 7

Contextual Info: SÌ6467DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET New Product V o * (V) -12 R d s (o n ) (^) M A) 0.014 @ V q s = -4-5 V ±8.0 0.019 @ V q s s -2.5 V ±7.0 0.027 @ V q s - -1 8 V ±5.8 *•" V* SO TSSOP-8 O— il- ‘ Source Pins 2, 3. 6 and 7 must be tied common

diode 8a 600v

Abstract: 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge
Contextual Info: Fairchild New Product Highlights, #1, August 2001 Interface & Logic Optoelectronics Fairchild New Product Highlights Analog Discrete Power Switch for off-line power supply See page 2 The Latest Fairchild Innovations Contents Comprehensive New Product List

PC MOTHERBOARD foxconn sc242

Abstract: transistor C458 intel 8255 hp 530 motherboard circuit and solution A0344 INTEL 82550 LT1587ADJ NPN C458 slot 1 foxconn sc242 intel ic 8255
Contextual Info: R Intel 820E Chipset Design Guide May 2001 Document Number: 298187-003 Intel® 820E Chipset R Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of Sale for such products, Intel assumes no liability

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123