SI5908DC Search Results
SI5908DC Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI5908DC-T1-E3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 4.4A 1206-8 | Original | 10 | |||
| SI5908DC-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 4.4A 1206-8 | Original | 10 |
SI5908DC Price and Stock
Vishay Intertechnologies SI5908DC-T1-E3Mosfet Dual, N Channel, 20V, 20V; |Vishay SI5908DC-T1-E3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI5908DC-T1-E3 | Tape & Reel | 3,000 |
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| SI5908DC-T1-E3 | Cut Tape | 3,000 |
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SI5908DC-T1-E3 | 35 |
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Vishay Intertechnologies SI5908DCT1GE3N-channel MOSFET, 30V, 8A, Vishay, SOT-23 package |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI5908DCT1GE3 | 3,000 |
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Others SI5908DCINSTOCK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI5908DC | 497 |
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Vishay Huntington SI5908DC-T1-E3MOSFET 2N-CH 20V 4.4A 1206-8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI5908DC-T1-E3 | 125,000 |
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Buy Now | |||||||
Vishay Huntington SI5908DC-T1-GE3MOSFET 2N-CH 20V 4.4A 1206-8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI5908DC-T1-GE3 | 500 |
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Buy Now | |||||||
SI5908DC Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Si5908DC-T1-E3
Abstract: SI5908DC-T1-GE3
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si5908dc2002/95/ecsi5908dc-t1-e318-jul-08+1 | |
Si5908DCContextual Info: SPICE Device Model Si5908DC Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si5908dcs-60073rev23-jan-06 | |
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Contextual Info: Si5908DC Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 20 0.045 at VGS = 2.5 V 5.6 0.052 at VGS = 1.8 V 5.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs |
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si5908dc2002/95/ecsi5908dc-electronic2011/65/eu+2 | |
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Contextual Info: Si5908DC Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 20 0.045 at VGS = 2.5 V 5.6 0.052 at VGS = 1.8 V 5.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs |
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si5908dc2002/95/ecsi5908dc-emarks2011/65/eu+1 | |
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Contextual Info: Si5908DC New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 D TrenchFETr Power MOSFETS D Ultra Low rDS(on) and Excellent Power |
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si5908dcsi5908dc-t1--e318-jul-08 | |
"MARKING CODE CC"Contextual Info: Si5908DC New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 D TrenchFETr Power MOSFETS D Ultra Low rDS(on) and Excellent Power |
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si5908dcsi5908dc-t1--e3s-41641--rev06-sep-04+1 | |
ChipFET
Abstract: si5908
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si5908dcsi5908dc-t1--e308-apr-05chipfet+1 | |
74025
Abstract: AN609
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si5908dcan60927-jun-0774025 | |
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Contextual Info: SPICE Device Model Si5908DC Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si5908dc18-jul-08 | |
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Contextual Info: Si5908DC Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 20 0.045 at VGS = 2.5 V 5.6 0.052 at VGS = 1.8 V 5.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs |
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si5908dc2002/95/ecsi5908dc-t1-e3si5908dc-t1-ge3+2 | |
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Contextual Info: Si5908DC Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 20 0.045 at VGS = 2.5 V 5.6 0.052 at VGS = 1.8 V 5.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs |
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si5908dc2002/95/ecsi5908dc-t1-e3si5908dc-t1-ge3+1 | |
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Contextual Info: 5-Channel Integrated Power Solution with Quad Buck Regulators and 200 mA LDO Regulator ADP5050 Data Sheet FEATURES TYPICAL APPLICATION CIRCUIT ADP5050 VDD C1 INT VREG OSCILLATOR 100mA RT C0 FB1 PVIN1 4.5V TO 15V BST1 C2 COMP1 CHANNEL 1 BUCK REGULATOR 1.2A/2.5A/4A |
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adp5050100mad10899-0-3/14 | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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p462-ndp463-ndlng295lfcp2ulng395mftp5u+11 | |
BS250KL-TR1-E3
Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
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si3865bdv-t1-e3ct-ndsi4720cy-t1-e3ct-ndsi6924aedq-t1-e3ct-ndsi1040x-t1-e3tr-nd+16 | |
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BST412
Abstract: GRM31CR61A476ME15 GRM188R60J226 GRM188R60J226M QDG1 adp5052 AON7804 SS34 Fuse IRFHM8363 4AC17
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04-26-2013-ccp-48-13adp5052d10900-0-5/13+9 | |
GS 069
Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
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si9165si9169600-matssop-20+12 | |
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Contextual Info: Integrated Power Solution with Quad Buck Regulators, Supervisory Circuit, and I2C Interface ADP5051 Data Sheet FEATURES TYPICAL APPLICATION CIRCUIT APPLICATIONS VDD C1 SYNC/MODE INT VREG OSCILLATOR 100mA RT C0 FB1 PVIN1 4.5V TO 15V BST1 C2 COMP1 SW1 CHANNEL 1 |
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adp5051100mad11635-0-11/13 | |
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Contextual Info: 5-Channel Integrated Power Solution with Quad Buck Regulators and 200 mA LDO Regulator ADP5052 Data Sheet FEATURES TYPICAL APPLICATION CIRCUIT APPLICATIONS ADP5052 SYNC/MODE VREG VDD C1 INT VREG OSCILLATOR 100mA RT C0 FB1 PVIN1 4.5V TO 15V BST1 C2 COMP1 CHANNEL 1 |
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adp5052100mabuc2548-lead+2 | |
adp5050
Abstract: ADP5050-EVALZ 4-Layer PCB Layout Guideline
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04-26-2013-ccp-48-13adp5050d10899-0-5/13+2 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8 | |
220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
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ad9272p462-ndlng295lfcp2up463-nd+11 | |
Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
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diod92vmn-sg2127-0911diode sot-23 marking 15dsi4210+8 | |
gs 069
Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
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sc-75sc-75asc-89gs 069+9 | |
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Contextual Info: FEATURES TYPICAL APPLICATION CIRCUIT Wide input voltage range: 4.5 V to 15.0 V ±1.5% output accuracy over full temperature range 250 kHz to 1.4 MHz adjustable switching frequency Adjustable/fixed output options via factory fuse or I2C interface I2C interface with interrupt on fault conditions |
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adp5051sin6004-26-2013-ccp-48-13+1 | |