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Catalog Datasheet	Type	Document Tags	PDF
74216 Abstract: si5490 Contextual Info: SPICE Device Model Si5490DU Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si5490DU 18-Jul-08 74216 si5490	PDF
16-2-222 Abstract: 0745 AN609 150074 70386 1.4567 Contextual Info: Si5490DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si5490DU AN609 19-Mar-07 16-2-222 0745 150074 70386 1.4567	PDF

Catalog Datasheet

Type

Document Tags

PDF

74216

Abstract: si5490
Contextual Info: SPICE Device Model Si5490DU Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Original

Si5490DU 18-Jul-08 74216 si5490

PDF

16-2-222

Abstract: 0745 AN609 150074 70386 1.4567
Contextual Info: Si5490DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Original

Si5490DU AN609 19-Mar-07 16-2-222 0745 150074 70386 1.4567

PDF