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SI5479DU Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI5479DU-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 16A CHIPFET	Original	PDF		9

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Vishay Siliconix


Vishay Siliconix SI5479DUT1E3 P-CHANNEL 12-V (D-S) MOSFET Power Field-Effect Transistor, 16A I(D), 12V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI5479DUT1E3		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI5479DU Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET	Original	si5479du si5479du-t1-ge3 2011/65/eu 2002/95/ec +112-mar-12	PDF
si5479 Contextual Info: Si5479DU Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.021 @ VGS = −4.5 V −16.9 0.028 @ VGS = −2.5 V −16 0.039 @ VGS = −1.8 V −16 VDS (V) −12 Qg (Typ) 21 nC D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr	Original	si5479du si5479du-t1--e3 s-50938--rev 08-may-05 +1si5479	PDF
Contextual Info: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET	Original	si5479du 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET	Original	si5479du 18-jul-08	PDF
4468 Abstract: C 6090 transistor c 6090 AN609 Contextual Info: Si5479DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	si5479du an609 20-jun-07 4468 +2c 6090 transistor c 6090	PDF
Contextual Info: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET	Original	si5479du 08-apr-05	PDF
Contextual Info: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET	Original	si5479du 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET	Original	si5479du si5479du-t1-ge3 11-mar-11	PDF
Contextual Info: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET	Original	si5479du 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET Power MOSFET	Original	si5479du 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Si5479DU Contextual Info: SPICE Device Model Si5479DU Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si5479du 18-jul-08	PDF
Contextual Info: Si5479DU Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.021 @ VGS = −4.5 V −16.9 0.028 @ VGS = −2.5 V −16 0.039 @ VGS = −1.8 V −16 VDS (V) −12 Qg (Typ) 21 nC D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr	Original	si5479du si5479du-t1--e3 08-apr-05	PDF
GS 069 Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no	Original	si9165 si9169 600-ma tssop-20 +12msop-10 sip1759 gs 069 si5902dc spice device model tsop6 marking 312 sc89-6 si7705dn si7100dn si3865bdv si5947du si3861bdv 1212-8	PDF
si5480 Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3 Contextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT	Original	si6463bdq si6459bdq-t1-ge3 si5944du-t1-e3 si5944du-t1-ge3 +15si5945du-t1-e3 si5945du-t1-ge3 si5947du-t1-e3 si5947du-t1-ge3 ppaksc75 si5480 sia913dj-t1-ge3 sia513dj-t1-e3 si6404dq-t1 sia411dj-t1-e3 sib414dk-t1-e3 si6913dq-t1-e3 sia513dj-t1-ge3 si6925adq-t1-e3 si6981dq-t1-ge3	PDF