SI5435 Search Results

SI5435BDC

Abstract: SI5435DC-T1-E3 SI5435BDC-T1 Si5435BDC-T1-E3 Si5435DC Si5435DC-T1
Contextual Info: Specification Comparison Vishay Siliconix Si5435BDC vs. Si5435DC Description: P-Channel, 30 V D-S MOSFET Package: 1206-8 ChipFET Pin Out: Identical Part Number Replacements: Si5435BDC-T1 Replaces Si5435DC-T1 Si5435BDC-T1-E3 (Lead (Pb)-free version) Replaces Si5435DC-T1-E3

Si5435BDC-T1

Abstract: SI5435BDC
Contextual Info: Si5435BDC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.045 @ VGS = −10 V −5.9 0.080 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFETS 1206-8 ChipFETr S 1 D D G D D D D G S Marking Code

SI5435BDC

Contextual Info: SPICE Device Model Si5435BDC Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si5435BDC-T1-GE3

Abstract: Si5435BDC-T1-E3 SI5435BDC
Contextual Info: Si5435BDC Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.045 at VGS = - 10 V - 5.9 0.080 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs 1206-8 ChipFET®

Si5435DC

Contextual Info: SPICE Device Model Si5435DC Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Vishay DaTE CODE 1206-8

Abstract: 1206-8 1206 8 ChipFET Si5435DC
Contextual Info: Si5435DC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.050 @ VGS = –10 V –5.6 0.080 @ VGS = –4.5 V –4.0 –30 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BE XX Lot Traceability and Date Code

Si5435DC

Abstract: Si5435DC-T1
Contextual Info: Si5435DC Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (Ω) ID (A) 0.050 @ VGS = -10 V -5.6 0.080 @ VGS = -4.5 V -4.0 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BE XX Lot Traceability and Date Code Part # Code

SI5435BDC

Contextual Info: SPICE Device Model Si5435BDC Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI5435BDC

Abstract: Si5435BDC-T1
Contextual Info: Si5435BDC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.045 @ VGS = −10 V −5.9 0.080 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFETS 1206-8 ChipFETr S 1 D D G D D D D G S Marking Code

Si5435DC

Contextual Info: SPICE Device Model Si5435DC Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si5435DC

Abstract: 41AR Si5435DC-T1
Contextual Info: Si5435DC Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (Ω) ID (A) 0.050 @ VGS = -10 V -5.6 0.080 @ VGS = -4.5 V -4.0 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BE XX Lot Traceability and Date Code Part # Code

Contextual Info: Si5435DC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.050 @ VGS = –10 V –5.6 0.080 @ VGS = –4.5 V –4.0 –30 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BE XX Lot Traceability and Date Code

Si5435DC

Abstract: Si5435DC-T1
Contextual Info: Si5435DC Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (Ω) ID (A) 0.050 @ VGS = -10 V -5.6 0.080 @ VGS = -4.5 V -4.0 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BE XX Lot Traceability and Date Code Part # Code

4907

Abstract: AN609
Contextual Info: Si5435BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SI5435BDC

Contextual Info: Si5435BDC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.045 @ VGS = −10 V −5.9 0.080 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFETS 1206-8 ChipFETr S 1 D D G D D D D G S Marking Code

Si5435DC

Contextual Info: SPICE Device Model Si5435DC P-Channel 30-V D-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse

Si5435DC

Contextual Info: SPICE Device Model Si5435DC Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si5435BDC-T1-GE3

Abstract: Si5435BDC-T1-E3 SI5435BDC
Contextual Info: Si5435BDC Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.045 at VGS = - 10 V - 5.9 0.080 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs 1206-8 ChipFET®

SI5435b

Abstract: Si5435BDC-T1-GE3 AN811 Si5435 SI5435BDC
Contextual Info: Si5435BDC Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.045 at VGS = - 10 V - 5.9 0.080 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs 1206-8 ChipFET®

SI5435BDC

Contextual Info: Si5435BDC Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.045 at VGS = - 10 V - 5.9 0.080 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs 1206-8 ChipFET®

SI5435BDC

Contextual Info: Si5435BDC Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.045 at VGS = - 10 V - 5.9 0.080 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs 1206-8 ChipFET®

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

Car Battery 12V pulse charger

Abstract: 638V max4919 N-FET FDC6561AN
Contextual Info: 19-0614; Rev 0; 8/06 Battery Power-Up Logic with Overvoltage and Overcurrent Protection Features The MAX4919B/MAX4920B/MAX4921B overvoltage protection controllers protect low-voltage systems against high-voltage faults up to +28V. An internal 1.8A min pFET with low RON (100mΩ) switches a battery to

Contextual Info: LT3956 80VIN, 80VOUT Constant-Current, Constant-Voltage Converter DESCRIPTION FEATURES n n n n n n n n n n n n n n n n 3000:1 True Color PWMTM Dimming Wide Input Voltage Range: 4.5V to 80V Output Voltage Up to 80V Internal 3.3A/84V Switch Constant-Current and Constant-Voltage Regulation