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    si4474

    Abstract: 9352 A 1492 AN609
    Contextual Info: Si4474DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		si4474dyan60925-mar-08si4474+29352a 1492 PDF

    Si4474DY

    Abstract: si4474 S-80738
    Contextual Info: SPICE Device Model Si4474DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		si4474dy18-jul-08si4474s-80738 PDF