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SI4473BDY Datasheets (4)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI4473BDY		Vishay Siliconix	P-Channel 14-V (D-S) MOSFET	Original	PDF	67.53KB	5
SI4473BDY-E3		Vishay Siliconix	P-Channel 14-V (D-S) MOSFET	Original	PDF	67.53KB	5
Si4473BDY SPICE Device Model		Vishay	P-Channel 14-V (D-S) MOSFET	Original	PDF	200.18KB	3
SI4473BDY-T1-E3		Vishay Siliconix	P-Channel 14-V (D-S) MOSFET	Original	PDF	67.53KB	5

SI4473BDY Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
72741 Abstract: Integrated Circuit 72741 72741 B Si4473BDY Contextual Info: SPICE Device Model Si4473BDY Vishay Siliconix P-Channel 14-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si4473bdy 18-jul-08 72741 integrated circuit 72741 +172741 b	PDF
Contextual Info: Si4473BDY Vishay Siliconix New Product P-Channel 14-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −14 rDS(on) (W) ID (A) 0.011 @ VGS = −4.5 V −13 0.018 @ VGS = −2.5 V −10 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATION D Battery Switch for Portable Devices	Original	si4473bdy si4473bdy--e3 si4473bdy-t1--e3 08-apr-05	PDF
Si4473BDY Contextual Info: Si4473BDY Vishay Siliconix New Product P-Channel 14-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −14 rDS(on) (W) ID (A) 0.011 @ VGS = −4.5 V −13 0.018 @ VGS = −2.5 V −10 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATION D Battery Switch for Portable Devices	Original	si4473bdy si4473bdy--e3 si4473bdy-t1--e3 s-32676--rev +129-dec-03	PDF
72741 Abstract: 72741 B Integrated Circuit 72741 Si4473BDY Contextual Info: SPICE Device Model Si4473BDY Vishay Siliconix P-Channel 14-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si4473bdy 16-dec-03 72741 72741 b +1integrated circuit 72741	PDF
Si4473BDY Abstract: Si4473BDY-T1-E3 Si4473DY Si4473DY-T1 Si4473DY-T1-E3 Contextual Info: Specification Comparison Vishay Siliconix Si4473BDY vs. Si4473DY Description: P-Channel, 14 V D-S MOSFET Package: SO-8 Pin Out: Identical Part Number Replacements: Si4473BDY-T1-E3 Replaces Si4473DY-T1-E3 Si4473BDY-T1-E3 Replaces Si4473DY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	si4473bdy si4473dy si4473bdy-t1-e3 si4473dy-t1-e3 +2si4473dy-t1 08-nov-06	PDF
74103 Abstract: 74103 datasheet 7916 AN609 Si4473BDY 74103+flip+flop Contextual Info: Si4473BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	si4473bdy an609 02-sep-05 74103 +374103 datasheet 7916 74103+flip+flop	PDF
Si4473BDY Contextual Info: Si4473BDY Vishay Siliconix New Product P-Channel 14-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −14 rDS(on) (W) ID (A) 0.011 @ VGS = −4.5 V −13 0.018 @ VGS = −2.5 V −10 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATION D Battery Switch for Portable Devices	Original	si4473bdy si4473bdy--e3 si4473bdy-t1--e3 18-jul-08	PDF