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    Vishay Intertechnologies

    Vishay Intertechnologies SI4413CDY-T1-GE3

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    Flip Electronics SI4413CDY-T1-GE3 7,500
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    SI4413CDY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    c 6092

    Abstract: Si4413CDY transistor 0882 AN609
    Contextual Info: Si4413CDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		si4413cdyan60905-jun-08c 6092+1transistor 0882 PDF

    Si4413CDY

    Abstract: si4413C
    Contextual Info: SPICE Device Model Si4413CDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		si4413cdy18-jul-08si4413c PDF

    Si4413CDY

    Contextual Info: SPICE Device Model Si4413CDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		si4413cdys-81902rev25-aug-08 PDF