SI4410 Search Results

Si4410BDY

Abstract: Si4410BDY-T1-E3 Si4410BDY-T1-GE3
Contextual Info: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0135 at VGS = 10 V 10 0.020 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

MS-012AA

Abstract: Si4410DY
Contextual Info: PD - 91853C Si4410DY HEXFET Power MOSFET l l l l l N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V RDS on = 0.0135Ω T o p V ie w Description This N-channel HEXFET® Power MOSFET is produced

D0807

Abstract: Si4410DY
Contextual Info: Si4410DY Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 D SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S NĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

Contextual Info: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS Pb-free Available D Battery Switch D Load Switch

PC505

Abstract: PR503 PD506 PC502 mitac 8 MAX786 PR504
Contextual Info: 1 2 3 4 5 6 7 8 A A PWR_ON_P PR504 100K 0603B 2 S 2 3 1 OUT 1 +12V_P 21 B 2 PC3 1U 1206 4 PC501 100U/25V ELC01 2 1 3 2 S LI2208 LI2209 PR2 0.01_1% 2512 PL2 L2301 +5V_P PD501 EC10QS04 S PQ1 SI4410DY_V SO8 G 4 PD502 1 PU2 MAX786 PC18 0.01U 0603B 21 BEAD 1812

Si4410DY

Abstract: Si4936DY Si6434DQ Si9410DY
Contextual Info: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see Si6434DQ D D D D SO-8

Contextual Info: PD - 91853C Si4410DY HEXFET Power MOSFET l l l l l N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V RDS on = 0.0135Ω T o p V ie w Description This N-channel HEXFET® Power MOSFET is produced

Contextual Info: PD - 95168 Si4410DYPbF l l l l l l HEXFET Power MOSFET N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free 1 8 S 2 7 S 3 6 4 5 S G Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced

irf 739 mosfet

Abstract: mosfet irf 380 EIA-541 Si4410DYPbF ic power so 8 single mosfet
Contextual Info: PD - 95168 Si4410DYPbF l l l l l l HEXFET Power MOSFET N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free 1 8 S 2 7 S 3 6 4 5 S G Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced

Contextual Info: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS Pb-free Available D Battery Switch D Load Switch

4410 SO-8

Abstract: FDR4410 Si4410DY SOIC-16
Contextual Info: April 1998 FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost alternative to the popular Si4410DY. 9.3 A, 30 V. RDS ON = 0.013 Ω @ VGS = 10 V RDS(ON) = 0.020 Ω @ VGS = 4.5 V.

Si4410DY-T1-REVA

Abstract: SI4410DY-T1-A-E3 Si4410DY Si4410DY-REVA Si4410DY-REVA-E3
Contextual Info: Si4410DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4410DY-REVA

Si4410DY

Contextual Info: Si4410DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

9959

Contextual Info: Si4410DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Si4410BDY

Abstract: Si4410BDY-T1
Contextual Info: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS Pb-free Available D Battery Switch D Load Switch

SI4410DY-T1

Abstract: SI4410DY-T1-A-E3 Si4410DY Si4410DY-REVA Si4410DY-REVA-E3 Si4410DY-T1-REVA
Contextual Info: Si4410DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4410DY-REVA

FDR4410

Abstract: Si4410DY SOIC-16
Contextual Info: May 1997 ADVANCE INFORMATION FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost alternative to the popular Si4410DY. The SuperSOTTM-8 package is 40% smaller than the SO-8

s49536

Contextual Info: TEMIC C’/I/IIATW Si4410DY Se mi conduct ors N-Channel 30-V D-S Rated MOSFET Product Summary V ds (V) 30 rDS(on) (ß) Id (A) 0.0135 @ V G s = 10 V ±10 0.020 @ V q s = 4.5 V ±8 D O S O -8 s [T ~ n s [X ~T~1 D s d ~6~| D G |~ 4 ~ 1 2 D d Ô S Top View Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)

Si4410

Abstract: Si4410BDY-E3 Si4410BDY Si4410BDY-T1 Si4410BDY-T1-E3 Si4410DY-REVA
Contextual Info: Specification Comparison Vishay Siliconix Si4410BDY vs. Si4410DY-REVA Description: N-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4410BDY Replaces Si4410DY-REVA Si4410BDY-E3 (Lead (Pb)-free version) Replaces Si4410DY-REVA

SI4410B

Contextual Info: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0135 at VGS = 10 V 10 0.020 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

a-14-s

Abstract: Si4410DY Si4936DY Si6434DQ Si9410DY
Contextual Info: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6434DQ

4410 SO-8

Abstract: c125t-a 4410 FDR4410 Si4410DY SOIC-16
Contextual Info: November 1997 PRELIMINARY FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost alternative to the popular Si4410DY. The SuperSOTTM-8 package is 40% smaller than the SO-8

Si4410DY

Contextual Info: Si4410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V "10 0.020 @ VGS = 4.5 V "8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

power mosfet so8 FL

Abstract: 2F 1 marking irf 739 mosfet IRF P CHANNEL MOSFET PN channel MOSFET 10A HEXFET SO-8 logic level n channel MOSFET tu marking MS-012AA Si4410DY
Contextual Info: PD - 91853B Si4410DY HEXFET Power MOSFET l l l l l N-Channel Mosfet Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V RDS on = 0.0135Ω T o p V ie w Description This N channel MOSFET is produced using International