SI4382 Search Results

SI4382 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI43-820		Xinwang Electronics	SMT Power Inductor	Original	PDF	120.47KB	1

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Vishay Intertechnologies


Vishay Intertechnologies SI4382DY-T1-GE3 MOSFETs 30V 4.7mohm @ 10V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SI4382DY-T1-GE3					1 - 10 - 100 - 1000 - 10000 $1.13	Get Quote
Vishay Intertechnologies SI4382DY-T1-E3 MOSFETs 30V 4.7mohm@10V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SI4382DY-T1-E3					1 - 10 - 100 - 1000 - 10000 $1.13	Get Quote

SI4382 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2429 Abstract: 6710 mosfet 9933 c 9933 mosfet AN609 Si4382DY Contextual Info: Si4382DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4382DY AN609 10-Sep-07 2429 6710 mosfet 9933 c 9933 mosfet	PDF
Si4382DY Contextual Info: SPICE Device Model Si4382DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4382DY 18-Jul-08	PDF
Si4382DY Contextual Info: Si4382DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES rDS on (W) ID (A) 0.0047 at VGS = 10 V 20 D Ultra Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D Qg Optimized D 100 % Rg Tested 0.0062 at VGS = 4.5 V	Original	Si4382DY Si4382DY-T1 18-Jul-08	PDF
Si4382DY Abstract: si4382 Contextual Info: Si4382DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES rDS on (W) ID (A) 0.0047 at VGS = 10 V 20 D Ultra Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D Qg Optimized D 100 % Rg Tested 0.0062 at VGS = 4.5 V	Original	Si4382DY Si4382DY-T1 52452--Rev. 28-Nov-05 si4382	PDF
a2711 Contextual Info: Si4382DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES rDS on (W) ID (A) 0.0047 at VGS = 10 V 20 D Ultra Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D Qg Optimized D 100 % Rg Tested 0.0062 at VGS = 4.5 V	Original	Si4382DY Si4382DY-T1 08-Apr-05 a2711	PDF
Contextual Info: SMT Power Inductor SI 43 Type Features RoHS compliant. Low profile 2.5mm max.height SMD type. Unshielded. Self-leads,suitable for high density mounting. High energy storage and low DCR Provided with embossed carrier tape packing. Ideal for power source circuits, DC-DC converter,	Original	098Max 100KHz SI43-1R0L SI43-1R2L SI43-1R5L SI43-1R8L SI43-2R2L 100uH.	PDF
q406 transistor Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS Contextual Info: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no	Original	SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS	PDF