Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI3850DV SPICE DEVICE MODEL Search Results

    SI3850DV SPICE DEVICE MODEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    EP1800ILC-70
    Rochester Electronics LLC EP1800 - Classic Family EPLD PDF Buy
    EP1800GM-75/B
    Rochester Electronics LLC EP1800 - Classic Family EPLD PDF Buy
    EP610DI-30
    Rochester Electronics LLC EP610 - Classic Family EPLD, Logic,300 Gates,16 Macrocells PDF Buy
    EP1810GI-35
    Rochester Electronics LLC EP1810 - Classic Family EPLD, Logic, 900 Gates, 48 Macrocells, 35ns, Industrial PDF Buy
    EP1810GC-35
    Rochester Electronics LLC EP1810 - Classic Family EPLD, Logic, 900 Gates, 48 Macrocells, 35ns, Commercial PDF Buy

    SI3850DV SPICE DEVICE MODEL Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    Si3850DV SPICE Device Model
    Vishay Complementary MOSFET Half-Bridge (N- and P-Channel) Original PDF 354.33KB 4

    SI3850DV SPICE DEVICE MODEL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Si3850DV

    Abstract: Si3850DV SPICE Device Model
    Contextual Info: SPICE Device Model Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si3850DV 17-Apr-01 Si3850DV SPICE Device Model PDF

    Si3850DV

    Contextual Info: SPICE Device Model Si3850DV Complementary MOSFET Half-Bridge N- and P- Channel Characteristics • N- and P- Channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original
    Si3850DV PDF

    50132

    Contextual Info: Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.500 @ VGS = 4.5 V 1.2 0.750 @ VGS = 3.0 V 1.0 1.00 @ VGS = −4.5 V −0.85 1.30 @ VGS = −3.0 V


    Original
    Si3850DV Si3850DV-T1 Si3850DV-T1--E3 08-Apr-05 50132 PDF

    Contextual Info: Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.500 @ VGS = 4.5 V 1.2 0.750 @ VGS = 3.0 V 1.0 1.00 @ VGS = −4.5 V −0.85 1.30 @ VGS = −3.0 V


    Original
    Si3850DV Si3850DV-T1 Si3850DV-T1--E3 08-Apr-05 PDF

    Si3850DV

    Abstract: Si3850DV-T1 S-50132
    Contextual Info: Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.500 @ VGS = 4.5 V 1.2 0.750 @ VGS = 3.0 V 1.0 1.00 @ VGS = −4.5 V −0.85 1.30 @ VGS = −3.0 V


    Original
    Si3850DV Si3850DV-T1 Si3850DV-T1--E3 S-50132--Rev. 24-Jan-05 S-50132 PDF

    Si3850DV-T1

    Abstract: Si3850DV s2dg1
    Contextual Info: Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.500 @ VGS = 4.5 V 1.2 0.750 @ VGS = 3.0 V 1.0 1.00 @ VGS = −4.5 V −0.85 1.30 @ VGS = −3.0 V


    Original
    Si3850DV Si3850DV-T1 Si3850DV-T1--E3 18-Jul-08 s2dg1 PDF

    sud*50n025-06p

    Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
    Contextual Info: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m


    Original
    VSA-SG0019-0310 sud*50n025-06p SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110 PDF