SI3477DV Search Results

SI3477DV Datasheets (1)

Filter by Manufacturer

Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI3477DV-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 8A 6-TSOP	Original	PDF		11

SI3477DV Price and Stock

Filter by Manufacturer

Select Manufacturer


Vishay Intertechnologies SI3477DV-T1-GE3 P-CHANNEL 12-V (D-S) MOSFET - Tape and Reel (Alt: SI3477DV-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI3477DV-T1-GE3	Tape & Reel		52 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.26	Buy Now
Newark ()	SI3477DV-T1-GE3	Cut Tape	3,000		1	1 $1.41 10 $1.41 100 $0.64 1000 $0.51 10000 $0.41	Buy Now
	SI3477DV-T1-GE3	Tape & Reel	1,154		100	1 - 10 - 100 $0.54 1000 $0.41 10000 $0.40	Buy Now
	SI3477DV-T1-GE3	Cut Tape	1,154		1	1 $1.31 10 $1.31 100 $0.54 1000 $0.41 10000 $0.40	Buy Now
	SI3477DV-T1-GE3	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.30	Buy Now
TTI	SI3477DV-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.33	Buy Now
TME	SI3477DV-T1-GE3				3,000	1 - 10 - 100 - 1000 - 10000 $0.24	Get Quote
Avnet Asia	SI3477DV-T1-GE3			54 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

EBV Elektronik	SI3477DV-T1-GE3			53 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SI3477DV-T1-GE3 SI3477DV-T1-GE3 P-CHANNEL MOSFET TRANSISTOR, 8 A, 12 V, 6-PIN TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SI3477DV-T1-GE3	Bulk			20	1 - 10 - 100 $1.21 1000 $1.15 10000 $1.15	Get Quote

SI3477DV Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: New Product Si3477DV Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A)a 0.0175 at VGS = - 4.5 V -8 0.023 at VGS = - 2.5 V -8 0.033 at VGS = - 1.8 V -8 • Halogen-free According to IEC 61249-2-21 Definition	Original	si3477dv 2002/95/ec si3477dv-t1-ge3 2011/65/eu +112-mar-12	PDF
Contextual Info: New Product Si3477DV Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A)a 0.0175 at VGS = - 4.5 V -8 0.023 at VGS = - 2.5 V -8 0.033 at VGS = - 1.8 V -8 • Halogen-free According to IEC 61249-2-21 Definition	Original	si3477dv 2002/95/ec si3477dv-t1-ge3 18-jul-08	PDF
Contextual Info: New Product Si3477DV Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A)a 0.0175 at VGS = - 4.5 V -8 0.023 at VGS = - 2.5 V -8 0.033 at VGS = - 1.8 V -8 • Halogen-free According to IEC 61249-2-21 Definition	Original	si3477dv 2002/95/ec si3477dv-t1-ge3 2011/65/eu +112-mar-12	PDF
Contextual Info: New Product Si3477DV Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A)a 0.0175 at VGS = - 4.5 V -8 0.023 at VGS = - 2.5 V -8 0.033 at VGS = - 1.8 V -8 • Halogen-free According to IEC 61249-2-21 Definition	Original	si3477dv 2002/95/ec si3477dv-t1-ge3 2011/65/eu +2js709a 02-oct-12	PDF
Si3477DV Abstract: si3477 Contextual Info: SPICE Device Model Si3477DV Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	si3477dv 18-jul-08 si3477	PDF
28-5940 Abstract: 71004 Contextual Info: Si3477DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	si3477dv an609 6936u 3562m +79719m 9148u 3406m 5349m 08-jun-10 28-5940 71004	PDF
si3477 Abstract: S1015 Contextual Info: New Product Si3477DV Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A)a 0.0175 at VGS = - 4.5 V -8 0.023 at VGS = - 2.5 V -8 0.033 at VGS = - 1.8 V -8 • Halogen-free According to IEC 61249-2-21 Definition	Original	si3477dv 2002/95/ec si3477dv-t1-ge3 11-mar-11 +2si3477 s1015	PDF
Contextual Info: SPICE Device Model Si3477DV www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	si3477dv 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Si7141 Abstract: SiA447DJ SI7615A Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on	Original	sc-75 sc-70 vmn-pt0197-1209 si7141 +2sia447dj si7615a	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF