SI3476DV Search Results
SI3476DV Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI3476DV-T1-BE3 | Vishay Siliconix | N-CHANNEL 80-V (D-S) MOSFET | Original | 232.17KB | 11 | ||
| SI3476DV-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 4.6A TSOP-6 | Original | 11 |
SI3476DV Price and Stock
Vishay Siliconix SI3476DV-T1-GE3MOSFET N-CH 80V 4.6A 6TSOP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3476DV-T1-GE3 | Cut Tape | 33,730 | 1 |
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SI3476DV-T1-GE3 | 6,000 | 1 |
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Vishay Siliconix SI3476DV-T1-BE3N-CHANNEL 80-V (D-S) MOSFET |
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SI3476DV-T1-BE3 | Digi-Reel | 5,916 | 1 |
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Vishay Intertechnologies SI3476DV-T1-BE3Transistor MOSFET N-CH 80V 4.6A 6-Pin TSOP - Tape and Reel (Alt: SI3476DV-T1-BE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3476DV-T1-BE3 | Reel | 12,000 | 26 Weeks | 3,000 |
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SI3476DV-T1-BE3 | 8,655 |
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SI3476DV-T1-BE3 | 6,000 | 3,000 |
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SI3476DV-T1-BE3 | 6,000 | 26 Weeks | 3,000 |
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SI3476DV-T1-BE3 | Reel | 18,000 | 3,000 |
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SI3476DV-T1-BE3 | 27 Weeks | 3,000 |
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Vishay Intertechnologies SI3476DV-T1-GE3Trans MOSFET N-CH 80V 4.6A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3476DV-T1-GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3476DV-T1-GE3 | Reel | 26 Weeks | 3,000 |
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SI3476DV-T1-GE3 | 82,155 |
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SI3476DV-T1-GE3 | 3,000 | 3,000 |
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SI3476DV-T1-GE3 | 3,000 | 26 Weeks | 3,000 |
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SI3476DV-T1-GE3 | Reel | 6,000 |
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SI3476DV-T1-GE3 | 24 |
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SI3476DV-T1-GE3 | Reel | 15,000 | 3,000 |
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SI3476DV-T1-GE3 | 8,500 |
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SI3476DV-T1-GE3 | 31 Weeks | 6,000 |
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SI3476DV-T1-GE3 | 27 Weeks | 3,000 |
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Vishay BLH SI3476DV-T1-GE3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI3476DV-T1-GE3 | 30 | 13 |
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SI3476DV Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SPICE Device Model Si3476DV www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C |
Original |
Si3476DV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: Si3476DV Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 a RDS(on) () Max. ID (A) 0.093 at VGS = 10 V 4.6 0.108 at VGS = 6 V 4.3 0.126 at VGS = 4.5 V 4 • TrenchFET Power MOSFET • 100 % Rg Tested • Material categorization: |
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Si3476DV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
N-Channel MOSFETsContextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in |
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SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs |