SI3458 Search Results

SI3458 Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI3458BDV-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 4.1A 6-TSOP	Original	PDF		11
SI3458BDV-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 4.1A 6-TSOP	Original	PDF		11
Si3458DV	Vishay Intertechnology	N-Channel 60-V (D-S) MOSFET	Original	PDF	67.33KB	4
SI3458DV	Vishay Siliconix	N-Channel 60-V (D-S) MOSFET	Original	PDF	53.34KB	4
Si3458DV SPICE Device Model	Vishay	N-Channel 60-V (D-S) MOSFET	Original	PDF	204.61KB	3
SI3458DV-T1	Vishay Intertechnology	N-Channel 60-V (D-S) MOSFET	Original	PDF	67.33KB	4
SI3458DV-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 3.2A 6-TSOP	Original	PDF		9

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Vishay Siliconix SI3458BDV-T1-E3 MOSFET N-CH 60V 4.1A 6TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SI3458BDV-T1-E3	Cut Tape	5,108		1	1 $1.29 10 $0.81 100 $0.54 1000 $0.38 10000 $0.38	Buy Now
	SI3458BDV-T1-E3	Digi-Reel	5,108		1	1 $1.29 10 $0.81 100 $0.54 1000 $0.38 10000 $0.38	Buy Now
	SI3458BDV-T1-E3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.30	Buy Now
Quest Components	SI3458BDV-T1-E3		77			1 $0.66 10 $0.55 100 $0.44 1000 $0.44 10000 $0.44	Buy Now
Vishay Siliconix SI3458BDV-T1-GE3 MOSFET N-CH 60V 4.1A 6TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SI3458BDV-T1-GE3	Digi-Reel	1,797			1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI3458BDV-T1-GE3	Cut Tape	1,797		1	1 $1.29 10 $0.81 100 $0.54 1000 $0.38 10000 $0.38	Buy Now
	SI3458BDV-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SI3458DV-T1-E3 MOSFET N-CH 60V 3.2A 6TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SI3458DV-T1-E3	Cut Tape			1	1 $2.24 10 $2.24 100 $2.24 1000 $2.24 10000 $2.24	Buy Now
	SI3458DV-T1-E3	Digi-Reel			1	1 $2.24 10 $2.24 100 $2.24 1000 $2.24 10000 $2.24	Buy Now
	SI3458DV-T1-E3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.61	Buy Now
Vishay Siliconix SI3458BDV-T1-BE3 MOSFET N-CH 60V 3.2A/4.1A 6TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SI3458BDV-T1-BE3	Digi-Reel			1	1 $1.29 10 $0.81 100 $0.54 1000 $0.38 10000 $0.38	Buy Now
	SI3458BDV-T1-BE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.30	Buy Now
	SI3458BDV-T1-BE3	Cut Tape			1	1 $1.29 10 $0.81 100 $0.54 1000 $0.38 10000 $0.38	Buy Now
Vishay Intertechnologies SI3458BDV-T1-E3 N-CHANNEL 60-V (D-S) MOSFET - Tape and Reel (Alt: SI3458BDV-T1-E3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI3458BDV-T1-E3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.27	Buy Now
Newark	SI3458BDV-T1-E3	Cut Tape			3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	SI3458BDV-T1-E3		80			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SI3458 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Si3458BDV Abstract: Si3458BDV-T1-E3 Contextual Info: New Product Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 VDS (V) 60 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS 3.5 nC APPLICATIONS	Original	Si3458BDV Si3458BDV-T1-E3 08-Apr-05	PDF
Si3458DV Abstract: ISM15 Contextual Info: Si3458DV New Product Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.10 @ VGS = 10 V "3.2 0.13 @ VGS = 4.5 V "2.8 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	Si3458DV S-61517--Rev. 12-Apr-99 ISM15	PDF
Si3458DV-T1 Abstract: Si3458DV Contextual Info: Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES rDS(on) (W) ID (A) 0.10 @ VGS = 10 V 3.2 0.13 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested D Lead (Pb)-Free Version is RoHS Compliant (1, 2, 5, 6) D TSOP-6	Original	Si3458DV Si3458DV-T1 Si3458DV-T1--E3 08-Apr-05	PDF
Contextual Info: Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	Si3458BDV 2002/95/EC Si3458BDV-T1-E3 Si3458emarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
SI3458 Contextual Info: - Si3458DV V IS H A Y Vishay Siliconix New Product N-Channel 60-V D-S MOSFET PRODUCT SUMMARY V d s (V) r DS(on) {&) I d (A) ± 3 .2 0 . 1 0 @ V G S = 10 V 60 0.1 3 @ V GS = 4 .5 ± 2 .8	OCR Scan	Si3458DV SI3458	PDF
Si3458BDV-T1-E3 Abstract: Si3458BDV Contextual Info: New Product Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 VDS (V) 60 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS 3.5 nC APPLICATIONS	Original	Si3458BDV Si3458BDV-T1-E3 18-Jul-08	PDF
Contextual Info: Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC ID (A)	Original	Si3458DV 2002/95/EC Si3458DV-T1-E3 Si3458DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SI3458DV-T1-GE3 Abstract: Si3458DV Si3458DV-T1-E3 Contextual Info: Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC ID (A)	Original	Si3458DV 2002/95/EC Si3458DV-T1-E3 Si3458DV-T1-GE3 18-Jul-08	PDF
Si3458BDV Contextual Info: SPICE Device Model Si3458BDV Vishay Siliconix N-Channel 60V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si3458BDV 18-Jul-08	PDF
Contextual Info: Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES rDS(on) (W) ID (A) 0.10 @ VGS = 10 V 3.2 0.13 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested D Lead (Pb)-Free Version is RoHS Compliant (1, 2, 5, 6) D TSOP-6	Original	Si3458DV Si3458DV-T1 Si3458DV-T1--E3 S-50694--Rev. 18-Apr-05	PDF
Si3458DV Contextual Info: SPICE Device Model Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si3458DV 18-Jul-08	PDF
si3458dv-t1-e3 Abstract: si3458 Contextual Info: Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC ID (A)	Original	Si3458DV 2002/95/EC Si3458DV-T1-E3 Si3458DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si3458	PDF
Si3458DV Abstract: Si3458DV-T1-GE3 Si3458DV-T1-E3 siln Contextual Info: Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC ID (A)	Original	Si3458DV 2002/95/EC Si3458DV-T1-E3 Si3458DV-T1-GE3 11-Mar-11 siln	PDF
Contextual Info: _ Si3458DV VISHAY ▼ Vishay Siliconix New Product N-Channel 60-V D-S MOSFET PRODUCT SUMMARY r DS(on) (& ) I d (A ) 0 .1 0 @ V GS= 10 V ±3 .2 0.13 @ VGS = 4.5 V ±2 .8 V d s (V) 60 (1,2, 5, 6) D Q TSOP-6 Top View 1 6 2	OCR Scan	Si3458DV S-61517â 12-Apr-99	PDF

Contextual Info: Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC ID (A)	Original	Si3458DV 2002/95/EC Si3458DV-T1-E3 Si3458DV-T1-GE3 11-Mar-11	PDF
Si3458DV Contextual Info: SPICE Device Model Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si3458DV 07-May-01	PDF
SI3458BDV-T1-GE3 Abstract: Si3458BDV Si3458BDV-T1-E3 Contextual Info: Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	Si3458BDV 2002/95/EC Si3458BDV-T1-E3 Si3458BDV-T1-GE3 18-Jul-08	PDF
Si3458BDV Abstract: Si3458BDV-T1-E3 Si3458BDV-T1-GE3 Contextual Info: Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	Si3458BDV 2002/95/EC Si3458BDV-T1-E3 Si3458BDV-T1-GE3 11-Mar-11	PDF
SI3458BDV-T1-GE3 Contextual Info: Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	Si3458BDV 2002/95/EC Si3458BDV-T1-E3 Si3458electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SI3458BDV-T1-GE3	PDF
Contextual Info: Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES rDS(on) (W) ID (A) 0.10 @ VGS = 10 V 3.2 0.13 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested D Lead (Pb)-Free Version is RoHS Compliant (1, 2, 5, 6) D TSOP-6	Original	Si3458DV Si3458DV-T1 Si3458DV-T1--E3 18-Jul-08	PDF
Si3458BDV Contextual Info: Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	Si3458BDV 2002/95/EC Si3458BDV-T1-E3 Si3458BDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
AN609 Abstract: Si3458DV Contextual Info: Si3458DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si3458DV AN609 28-Mar-07	PDF
8772 P Abstract: 8772 AN609 Si3458BDV Contextual Info: Si3458BDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si3458BDV AN609 29-Aug-07 8772 P 8772	PDF
Contextual Info: Si3458DV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/96/EC ID (A)	Original	Si3458DV 2002/96/EC Si3458DV-T1-E3 Si3458DV-T1-GE3 18-Jul-08	PDF

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SI3458 Datasheets (7)

SI3458 Price and Stock

Vishay Siliconix SI3458BDV-T1-E3

Vishay Siliconix SI3458BDV-T1-GE3

Vishay Siliconix SI3458DV-T1-E3

Vishay Siliconix SI3458BDV-T1-BE3

Vishay Intertechnologies SI3458BDV-T1-E3

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