SI3456C Search Results

S-80735

Abstract: Si3456CDV
Contextual Info: SPICE Device Model Si3456CDV Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

Si3456DDV

Abstract: SI3456CDV Si3456CDV-T1-E3 Si3456CDV-T1-GE3 SI3456DDV-T1-GE3 si3456dd
Contextual Info: Specification Comparison Vishay Siliconix Si3456DDV vs. Si3456CDV Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3456DDV-T1-GE3 replaces Si3456CDV-T1-GE3 Si3456DDV-T1-E3 or Si3456DDV-T1-GE3 replaces Si3456CDV-T1-E3

68341

Abstract: that 2159 AN609 Si3456CDV 32-1014
Contextual Info: Si3456CDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si3456CDV

Abstract: Si3456CDV-T1-E3 Si3456CDV-T1-GE3
Contextual Info: Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

SI3456C

Contextual Info: Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

Si3456CDV

Abstract: Si3456CDV-T1-E3
Contextual Info: New Product Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 VDS (V) 30 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS 4 nC RoHS COMPLIANT • Load Switch

Contextual Info: Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

SI3456CDV

Contextual Info: New Product Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 VDS (V) 30 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS 4 nC RoHS COMPLIANT • Load Switch

Si3456BDV

Abstract: Si3456CDV Si3456BDV-T1-E3 Si3456CDV-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si3456CDV vs. Si3456BDV Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3456CDV-T1-E3 replaces Si3456BDV-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

BSS138 NXP

Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
Contextual Info: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety