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SI3447CDV Datasheets (2)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI3447CDV-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 7.8A 6TSOP	Original	PDF		11
SI3447CDV-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 7.8A 6-TSOP	Original	PDF		11

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Vishay Siliconix SI3447CDV-T1-GE3 SI3447CDV-T1-GE3 P-CHANNEL MOSFET TRANSISTOR, 6.2 A, 12 V, 6-PIN TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SI3447CDV-T1-GE3	Bulk			20	1 - 10 - 100 $1.09 1000 $1.09 10000 $1.09	Get Quote
Vishay Intertechnologies SI3447CDVT1GE3 P-CHANNEL 12-V (D-S) MOSFET Small Signal Field-Effect Transistor, 7.8A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI3447CDVT1GE3		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI3447CDV Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Si3447CDV-T1-GE3 Contextual Info: Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 • Halogen-free According to IEC 61249-2-21 Definition	Original	si3447cdv 2002/95/ec si3447cdv-t1-e3 si3447cdv-t1-ge3 +111-mar-11	PDF
Contextual Info: Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 • Halogen-free According to IEC 61249-2-21 Definition	Original	si3447cdv 2002/95/ec si3447cdv-t1-e3 si3447cdv-t1-ge3 +22011/65/eu 12-mar-12	PDF
SI3447CDV Contextual Info: New Product Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 VDS (V) - 12 • TrenchFET Power MOSFET • PWM Optimized	Original	si3447cdv si3447cdv-t1-e3 08-apr-05	PDF
AN609 Contextual Info: Si3447CDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	si3447cdv an609 27-nov-07	PDF
SI3447CDV Contextual Info: New Product Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 VDS (V) - 12 • TrenchFET Power MOSFET • PWM Optimized	Original	si3447cdv si3447cdv-t1-e3 18-jul-08	PDF
Contextual Info: Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 • Halogen-free According to IEC 61249-2-21 Definition	Original	si3447cdv 2002/95/ec si3447cdv-t1-e3 si3447cdv-t1-ge3 +32011/65/eu js709a 02-oct-12	PDF
81212 Contextual Info: SPICE Device Model Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si3447cdv 18-jul-08 81212	PDF
Si3447BDV Abstract: Si3447BDV-T1 Si3447BDV-T1-E3 SI3447CDV Contextual Info: Specification Comparison Vishay Siliconix Si3447CDV vs. Si3447BDV Description: Package: Pin Out: P-Channel, 12-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3447CDV-T1-E3 replaces Si3447BDV-T1-E3 Si3447CDV-T1-E3 replaces Si3447BDV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	si3447cdv si3447bdv si3447cdv-t1-e3 si3447bdv-t1-e3 +2si3447bdv-t1 06-feb-08	PDF
Contextual Info: Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 ID (A)a RDS(on) (Ω) 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 • Halogen-free According to IEC 61249-2-21 Definition	Original	si3447cdv 2002/95/ec si3447cdv-t1-e3 si3447cdv-t1-ge3 +22011/65/eu 12-mar-12	PDF
Contextual Info: Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 • Halogen-free According to IEC 61249-2-21 Definition	Original	si3447cdv 2002/95/ec si3447cdv-t1-e3 si3447cdv-t1-ge3 +111-mar-11	PDF
Contextual Info: Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 • Halogen-free According to IEC 61249-2-21 Definition	Original	si3447cdv 2002/95/ec si3447cdv-t1-e3 si3447cdv-t1-ge3 +118-jul-08	PDF
Contextual Info: SPICE Device Model Si3447CDV www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	si3447cdv 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 f155-6a f155-10a f165-15a +11f175-25a irfb4115 bty79 equivalent diode skn 21-04 marking code w04 sot-23 bbc 598 479 diode mw 137 600g tfk 401 s 673 vishay telefunken tfk transistor infineon transistor marking w31 jys marking transistor	PDF
BSS138 NXP Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250 Contextual Info: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety	Original	ot223 ot883 pht8n06lt bsp030 +13pmn50xp pmn55ln pmn34ln bsh103 bss138 nxp fdc642p 2n7002 nxp ao3401 bss123 nxp irll014n pmv65xp bsh108 bsp250	PDF

Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	diod92 vmn-sg2127-0911 diode sot-23 marking 15d si4210 +8si4812b si-4102 si7149dp sim400 si4932 si7135 sib914 si4477	PDF