SI3443DV Search Results

mosfet p-channel 300v irf

Abstract: P-Channel 200V MOSFET TSOP6 Si3443DVPbF IRF5850 IRF5851 IRF5852 mosfet 23 Tsop-6 PD-95240 p-channel 250V 30A power mosfet IRF 100A 500V
Contextual Info: PD-95240 Si3443DVPbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated Lead-Free D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω Top View Description These P-channel MOSFETs from International Rectifier

SI3443DV

Contextual Info: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "4.4 0.090 @ VGS = –2.7 V "3.7 0.100 @ VGS = –2.5 V "3.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm

SI3443DV-T1-E3

Abstract: SI3443BDV-T1-E3 SI3443DV-T1 74073 Si3443DV SI3443BDV
Contextual Info: Specification Comparison Vishay Siliconix Si3443BDV vs. Si3443DV Description: P-Channel, 2.5 V G-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3443BDV-T1-E3 Replaces Si3443DV-T1-E3 Si3443BDV-T1 Replaces Si3443DV-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Si3443DV

Abstract: 70-904
Contextual Info: SPICE Device Model Si3443DV P-Channel 2.5-V G-S Rated MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse

Si3443DV-T1

Abstract: Si3443DV-T1-E3 Si3443DV
Contextual Info: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.065 @ VGS = −4.5 V −4.5 0.090 @ VGS = −2.7 V −3.8 0.100 @ VGS = −2.5 V −3.7 D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View

Si3443DV

Abstract: 70-904
Contextual Info: SPICE Device Model Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI3443BDV

Abstract: Si3443DV Si3443DV-T1-E3 Si3443DV-T1 Si3443BDV-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si3443BDV vs. Si3443DV Description: P-Channel, 2.5-V G-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3443BDV-T1 Replaces Si3443DV-T1 Si3443BDV-T1—E3 (Lead (Pb)-Free version) Replaces Si3443DV-T1—E3

SI3443DV-T1

Contextual Info: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.065 @ VGS = −4.5 V −4.5 0.090 @ VGS = −2.7 V −3.8 0.100 @ VGS = −2.5 V −3.7 D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View

Contextual Info: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "4.4 0.090 @ VGS = –2.7 V "3.7 0.100 @ VGS = –2.5 V "3.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm

Contextual Info: Si3443DV Vishay Siliconix P-Channel, 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 RDS(ON) (W) ID (A) 0.065 @ VGS = –4.5 V "4.4 0.090 @ VGS = –2.7 V "3.7 0.100 @ VGS = –2.5 V "3.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm

P-Channel 200V MOSFET TSOP6

Contextual Info: PD- 93795 Si3443DV HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated D A D 1 6 2 5 3 4 VDSS = -20V D G D RDS on = 0.065Ω S T o p V ie w Description These P-channel MOSFETs from International Rectifier

Si3443DV

Abstract: P-Channel 200V MOSFET TSOP6
Contextual Info: PD- 93795A Si3443DV HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω T o p V ie w Description These P-channel MOSFETs from International Rectifier

Si3443DV

Contextual Info: Si3443DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for

Contextual Info: Si3443DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for

SI3443DV-T1

Contextual Info: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES rDS(on) (W) ID (A) 0.065 @ VGS = - 4.5 V - 4.5 0.090 @ VGS = - 2.7 V - 3.8 0.100 @ VGS = - 2.5 V - 3.7 D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View 3 mm

AN609

Abstract: Si3443DV
Contextual Info: Si3443DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si3443DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for

Contextual Info: Tem ic Si3443DV Semiconductors P-Channel, 2.5-V G-S Rated MOSFET Product Summary V D S (V ) -2 0 r DS(on) (£2) I d (A ) 0 .0 6 5 @ V Gs = - 4 .5 V ± 4 .4 0 .0 9 0 @ V Gs = - 2 .7 V ± 3 .7 0 .1 0 0 @ V Gs = - 2 . 5 V ± 3 .5 (4 )S Q TSOP-6 Top View 3 mm

D207

Abstract: 838 ir TSOP IR
Contextual Info: Si3443DV Tape & Reel Information TSOP-6 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: 310 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: + 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

tsop6

Abstract: TSOP-6 SI3443DV TSOP-6 Marking Marking information part marking information 036 marking TSOP66
Contextual Info: Si3443DV Package Outline TSOP-6 Part Marking Information TSOP-6 6 www.irf.com

SI3443DV

Abstract: IRF5806 IRF5852 MO-193-AA IRF5800 IRF5805 IRF5810 IRF5850 IRF5851 MO-193AA
Contextual Info: TSOP6 MO-193AA W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR Y = YEAR W = WEEK PART NUMBER TOP PART NUMBER CODE REFERENCE: A = SI3443DV B = IRF5800 C = IRF5850 D = IRF5851 E = IRF5852 I = IRF5805 J = IRF5806 K = IRF5810 LOT CODE YEAR Y 2001 2002

Si3443DV

Abstract: s0499
Contextual Info: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.065 @ VGS = - 4.5 V - 4.5 0.090 @ VGS = - 2.7 V - 3.8 0.100 @ VGS = - 2.5 V - 3.7 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 2.85 mm (1, 2, 5, 6) D P-Channel MOSFET

Si3443DV

Contextual Info: Si3443DV Single P-Channel, 2.5-V G-S Rated MOSFET Product Summary VDS (V) –20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "4.4 0.090 @ VGS = –2.7 V "3.7 0.100 @ VGS = –2.5 V "3.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET

Si3443DV

Contextual Info: SPICE Device Model Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range