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    SI2302CDST1E3 Search Results

    SI2302CDST1E3 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI2302CDS-T1-E3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 2.6A SOT-23 Original PDF 8
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    SI2302CDST1E3 Price and Stock

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    Vishay Siliconix SI2302CDS-T1-E3

    MOSFET N-CH 20V 2.6A SOT23-3
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    DigiKey () SI2302CDS-T1-E3 Digi-Reel 85,317 1
    • 1 $0.42
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    SI2302CDS-T1-E3 Cut Tape 85,317 1
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    SI2302CDS-T1-E3 Reel 84,000 3,000
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    Quest Components SI2302CDS-T1-E3 296
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    New Advantage Corporation SI2302CDS-T1-E3 6,000 1
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    Vishay Intertechnologies SI2302CDS-T1-E3

    N-CHANNEL 20-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 69W7186)
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    Avnet Americas () SI2302CDS-T1-E3 Ammo Pack 1
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    SI2302CDS-T1-E3 Reel 32 Weeks 3,000
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    Mouser Electronics SI2302CDS-T1-E3 392,785
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    Newark () SI2302CDS-T1-E3 Cut Tape 7,161 1
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    SI2302CDS-T1-E3 Reel 3,000
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    Bristol Electronics SI2302CDS-T1-E3 3,095
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    Quest Components () SI2302CDS-T1-E3 149
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    SI2302CDS-T1-E3 80
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    TTI SI2302CDS-T1-E3 Reel 6,000 3,000
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    Avnet Asia SI2302CDS-T1-E3 17 Weeks 3,000
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    Chip-Germany GmbH SI2302CDS-T1-E3 8
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    EBV Elektronik SI2302CDS-T1-E3 33 Weeks 3,000
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    Vishay BLH SI2302CDS-T1-E3

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    Bristol Electronics SI2302CDS-T1-E3 187 11
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    Vishay Intertechnologies SI2302CDST1E3

    N-CHANNEL 20 V (D-S) MOSFET Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
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    ComSIT USA SI2302CDST1E3 1,830
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    SI2302CDST1E3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    sot-23 Marking N2

    Abstract: sot-236 Marking N2 Si2302CDS
    Contextual Info: Si2302CDS Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET RoHS APPLICATIONS


    Original     		Si2302CDS O-236 OT-23) Si2302CDS-T1-E3 Si2302CDS-T1-GE3 11-Mar-11 sot-23 Marking N2 sot-236 Marking N2 PDF

    Si2302CDS

    Contextual Info: Si2302CDS Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET RoHS APPLICATIONS


    Original     		Si2302CDS O-236 OT-23) Si2302CDS-T1-E3 Si2302CDS-T1-GE3 11-Mar-11 PDF

    sot-23 Marking N2

    Contextual Info: Si2302CDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see


    Original     		Si2302CDS O-236 OT-23) Si2302CDS-T1-E3 Si2302CDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A sot-23 Marking N2 PDF

    SI2302CDS

    Abstract: sot-23 Marking N2
    Contextual Info: Si2302CDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see


    Original     		Si2302CDS O-236 OT-23) Si2302CDS-T1-E3 Si2302CDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. sot-23 Marking N2 PDF

    sot-23 Marking N2

    Abstract: Si2302CDS
    Contextual Info: Si2302CDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • • • • Halogen-free According to IEC 61249-2-21 Definition TrenchFET Power MOSFET


    Original     		Si2302CDS 2002/95/EC O-236 OT-23) Si2302CDS-T1-E3 Si2302CDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC sot-23 Marking N2 PDF

    sot-23 Marking N2

    Contextual Info: Si2302CDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see


    Original     		Si2302CDS O-236 OT-23) Si2302CDS-T1-E3 Si2302CDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. sot-23 Marking N2 PDF

    Si2302CDS

    Abstract: 68645 si2302cds-t1-e3 si2302cdst1e3
    Contextual Info: Si2302CDS Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • Halogen-free Option Available • TrenchFET Power MOSFET RoHS APPLICATIONS


    Original     		Si2302CDS O-236 OT-23) Si2302CDS-T1-E3 Si2302CDS-T1-GE3 18-Jul-08 68645 si2302cdst1e3 PDF