Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    SI191 Search Results

    SI191 Datasheets (15)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    Si1912EDH
    		Vishay Intertechnology N-Channel 20-V (D-S) MOSFET with Copper Leadframe Original PDF 30.83KB 3
    SI1912EDH
    		Vishay Siliconix MOSFETs Original PDF 39.99KB 5
    Si1912EDH SPICE Device Model
    		Vishay N-Channel 20-V (D-S) MOSFET with Copper Leadframe Original PDF 214.79KB 3
    SI1912EDH-T1-E3
    		Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 1.13A SC70-6 Original PDF 11
    SI1913DH
    		Vishay Siliconix MOSFETs Original PDF 44.22KB 5
    Si1913DH SPICE Device Model
    		Vishay Dual P-Channel 20-V (D-S) MOSFET Original PDF 253.86KB 3
    SI1913DH-T1-E3
    		Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 880MA SC70-6 Original PDF 11
    Si1913EDH
    		Vishay Intertechnology Dual P-Channel 20-V (D-S) MOSFET Original PDF 42.22KB 5
    SI1913EDH
    		Vishay Siliconix MOSFETs Original PDF 42.23KB 5
    Si1913EDH SPICE Device Model
    		Vishay Dual P-Channel 20-V (D-S) MOSFET Original PDF 233.96KB 3
    SI1913EDH-T1-E3
    		Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 880MA SC70-6 Original PDF 11
    Si1917EDH
    		Vishay Intertechnology Dual P-Channel 12-V (D-S) MOSFET with Copper Leadframe Original PDF 33.24KB 3
    SI1917EDH
    		Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET Original PDF 41.17KB 5
    Si1917EDH SPICE Device Model
    		Vishay Dual P-Channel 20-V (D-S) MOSFET Original PDF 232.77KB 3
    SI1917EDH-T1-E3
    		Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 12V 1A SC70-6 Original PDF 11
    SF Impression Pixel

    SI191 Price and Stock

    Select Manufacturer

    Vishay Intertechnologies SI1917EDWF

    - Custom Tape W/Leader (Alt: SI1917EDWF)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI1917EDWF Tape w/Leader 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.08
    		Buy Now

    Vishay Siliconix SI1912EDH-T1-E3

    SI1912EDH-T1-E3 DUAL N-CHANNEL MOSFET TRANSISTOR, 1.13 A, 20 V, 6-PIN SOT-363
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SI1912EDH-T1-E3 Bulk 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.42
    		Get Quote
    Quest Components SI1912EDH-T1-E3 12
    • 1 $0.28
    • 10 $0.28
    • 100 $0.28
    • 1000 $0.28
    • 10000 $0.28
    		Buy Now

    Vishay Intertechnologies SI1965DH-T1-GE3

    MOSFETs -12V Vds 8V Vgs SC70-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SI1965DH-T1-GE3 Reel 12,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.19
    		Buy Now

    Vishay Intertechnologies SI1912EDH-T1-E3

    Trans MOSFET N-CH 20V 1.13A 6-Pin SC-70 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI1912EDH-T1-E3 3,887
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Vishay Intertechnologies SI1912EDH-T1-GE3

    Trans MOSFET N-CH 20V 1.13A 6-Pin SC-70 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI1912EDH-T1-GE3 1,193
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Find more SI191 price and stock on Findchips.com

    SI191 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SI1912EDH-T1-E3

    Abstract: Si1912EDH Si1912EDH-T1-GE3 "MARKING CODE CA"
    Contextual Info: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		si1912edhsc-702002/95/ecot-363+5si191lectual18-jul-08si1912edh-t1-e3si1912edh-t1-ge3marking code ca PDF

    Si1917EDH

    Abstract: si1917edh-t1-e3 marking code 3K
    Contextual Info: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		si1917edhsc-702002/95/ecot-363+318-jul-08si1917edh-t1-e3marking code 3k PDF

    Si1917EDH

    Contextual Info: SPICE Device Model Si1917EDH Dual P-Channel 12-V D-S MOSFET with Copper Leadframe Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original     		si1917edh PDF

    S101-05

    Abstract: AN816 SI1912EDH-T1
    Contextual Info: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		si1912edhsc-702002/95/ecot-363+6si1912edh-t1-e3si1912edh-t1-ge32011/65/eus101-05an816si1912edh-t1 PDF

    Contextual Info: Si1913DH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.10 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		si1913dhsc-702002/95/ecot-363+3si1913dh-t1-e32011/65/eujs709a PDF

    Si1913EDH

    Contextual Info: Si1913EDH New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.490 @ VGS = –4.5 V –1.0 APPLICATIONS


    Original     		si1913edhsc-70ot-36318-jul-08 PDF

    Si1912EDH

    Abstract: s0317
    Contextual Info: Si1912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 APPLICATIONS


    Original     		si1912edhsc-70ot-36318-jul-08+1s0317 PDF

    71492

    Abstract: Si1913EDH
    Contextual Info: SPICE Device Model Si1913EDH Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		si1913edh14-feb-0171492 PDF

    Si1913EDH

    Contextual Info: SPICE Device Model Si1913EDH Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		si1913edhs-51866rev12-sep-05 PDF

    Si1912EDH

    Abstract: Si1912EDH-T1-E3 Si1912EDH-T1-GE3 SI1912EDH-T1
    Contextual Info: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		si1912edhsc-702002/95/ecot-363+5si19111-mar-11si1912edh-t1-e3si1912edh-t1-ge3si1912edh-t1 PDF

    Si1913EDH-T1-E3

    Abstract: 3K MARKING CODE Si1913EDH
    Contextual Info: Si1913EDH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.1 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		si1913edhsc-702002/95/ecot-363+318-jul-08si1913edh-t1-e33k marking code PDF

    Si1913EDH

    Contextual Info: Si1913EDH New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.490 @ VGS = –4.5 V –1.0 APPLICATIONS


    Original     		si1913edhsc-70ot-363s-03175--rev+105-mar-01 PDF

    Contextual Info: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		si1917edhsc-702002/95/ecot-363+22011/65/eu12-mar-12 PDF

    marking WE SC70-6

    Contextual Info: Si1913DH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.10 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		si1913dhsc-702002/95/ecot-363+4si1913dh-t1-e3si1913dh-t1-ge32011/65/eumarking we sc70-6 PDF

    Si1912EDH

    Contextual Info: Si1912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 APPLICATIONS


    Original     		si1912edhsc-70ot-363s-03176--rev+105-mar-01 PDF

    Si1912EDH

    Abstract: 113aa
    Contextual Info: SPICE Device Model Si1912EDH Vishay Siliconix N-Channel 20-V D-S MOSFET with Copper Leadframe CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		si1912edh14-feb-01113aa PDF

    Si1913DH

    Contextual Info: SPICE Device Model Si1913DH Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		si1913dh25-oct-02 PDF

    AN609

    Abstract: Si1913DH
    Contextual Info: Si1913DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		si1913dhan60928-mar-07 PDF

    AN609

    Abstract: Si1913EDH
    Contextual Info: Si1913EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		si1913edhan60928-mar-07 PDF

    Contextual Info: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		si1917edhsc-702002/95/ecot-363+22011/65/eujs709a PDF

    Si1912EDH

    Contextual Info: SPICE Device Model Si1912EDH N-Channel 20-V D-S MOSFET with Copper Leadframe Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original     		si1912edh PDF

    Si1913DH

    Contextual Info: Si1913DH New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (A) 0.490 @ VGS = -4.5 V -1.0 0.750 @ VGS = -2.5 V - 0.81 1.10 @ VGS = -1.8 V - 0.67 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package


    Original     		si1913dhsc-70ot-363s-21482--rev+126-aug-02 PDF

    Contextual Info: Si1913EDH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.1 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		si1913edhsc-702002/95/ecot-363+3si1913edh-t1-e3si1913edh-t1-ge311-mar-11 PDF

    Si1917EDH

    Contextual Info: Si1917EDH New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.370 @ VGS = –4.5 V –1.15 APPLICATIONS


    Original     		si1917edhsc-70ot-363s-03174--rev+107-mar-01 PDF