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    SI191 Search Results

    SI191 Datasheets (15)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    Si1912EDH
    		Vishay Intertechnology N-Channel 20-V (D-S) MOSFET with Copper Leadframe Original PDF 30.83KB 3
    SI1912EDH
    		Vishay Siliconix MOSFETs Original PDF 39.99KB 5
    Si1912EDH SPICE Device Model
    		Vishay N-Channel 20-V (D-S) MOSFET with Copper Leadframe Original PDF 214.79KB 3
    SI1912EDH-T1-E3
    		Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 1.13A SC70-6 Original PDF 11
    SI1913DH
    		Vishay Siliconix MOSFETs Original PDF 44.22KB 5
    Si1913DH SPICE Device Model
    		Vishay Dual P-Channel 20-V (D-S) MOSFET Original PDF 253.86KB 3
    SI1913DH-T1-E3
    		Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 880MA SC70-6 Original PDF 11
    Si1913EDH
    		Vishay Intertechnology Dual P-Channel 20-V (D-S) MOSFET Original PDF 42.22KB 5
    SI1913EDH
    		Vishay Siliconix MOSFETs Original PDF 42.23KB 5
    Si1913EDH SPICE Device Model
    		Vishay Dual P-Channel 20-V (D-S) MOSFET Original PDF 233.96KB 3
    SI1913EDH-T1-E3
    		Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 880MA SC70-6 Original PDF 11
    Si1917EDH
    		Vishay Intertechnology Dual P-Channel 12-V (D-S) MOSFET with Copper Leadframe Original PDF 33.24KB 3
    SI1917EDH
    		Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET Original PDF 41.17KB 5
    Si1917EDH SPICE Device Model
    		Vishay Dual P-Channel 20-V (D-S) MOSFET Original PDF 232.77KB 3
    SI1917EDH-T1-E3
    		Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 12V 1A SC70-6 Original PDF 11
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    SI191 Price and Stock

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    Vishay Siliconix SI1913DH-T1-E3

    MOSFET 2P-CH 20V 0.88A SC70-6
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    Vishay Siliconix SI1912EDH-T1-E3

    MOSFET 2N-CH 20V 1.13A SC70-6
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    Quest Components SI1912EDH-T1-E3 12
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    Vishay Siliconix SI1913EDH-T1-E3

    MOSFET 2P-CH 20V 0.88A SC70-6
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    Vishay Siliconix SI1917EDH-T1-E3

    MOSFET 2P-CH 12V 1A SC70-6
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    Alliance Sensors Group GHSI-19-100-A-02-20-S

    SENSOR LINEAR 101.6MM CONNECTOR
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    DigiKey GHSI-19-100-A-02-20-S Tube 1
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    SI191 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SI1912EDH-T1-E3

    Abstract: Si1912EDH Si1912EDH-T1-GE3 "MARKING CODE CA"
    Contextual Info: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		Si1912EDH SC-70 2002/95/EC OT-363 SC-70 Si191lectual 18-Jul-08 SI1912EDH-T1-E3 Si1912EDH-T1-GE3 "MARKING CODE CA" PDF

    Si1917EDH

    Abstract: si1917edh-t1-e3 marking code 3K
    Contextual Info: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1917EDH SC-70 2002/95/EC OT-363 SC-70 18-Jul-08 si1917edh-t1-e3 marking code 3K PDF

    Si1917EDH

    Contextual Info: SPICE Device Model Si1917EDH Dual P-Channel 12-V D-S MOSFET with Copper Leadframe Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original     		Si1917EDH PDF

    S101-05

    Abstract: AN816 SI1912EDH-T1
    Contextual Info: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		Si1912EDH SC-70 2002/95/EC OT-363 SC-70 Si1912EDH-T1-E3 Si1912EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC S101-05 AN816 SI1912EDH-T1 PDF

    Contextual Info: Si1913DH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.10 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1913DH SC-70 2002/95/EC OT-363 SC-70 Si1913DH-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Si1913EDH

    Contextual Info: Si1913EDH New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.490 @ VGS = –4.5 V –1.0 APPLICATIONS


    Original     		Si1913EDH SC-70 OT-363 SC-70 18-Jul-08 PDF

    Si1912EDH

    Abstract: s0317
    Contextual Info: Si1912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 APPLICATIONS


    Original     		Si1912EDH SC-70 OT-363 SC-70 18-Jul-08 s0317 PDF

    71492

    Abstract: Si1913EDH
    Contextual Info: SPICE Device Model Si1913EDH Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si1913EDH 14-Feb-01 71492 PDF

    Si1913EDH

    Contextual Info: SPICE Device Model Si1913EDH Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si1913EDH S-51866Rev. 12-Sep-05 PDF

    Si1912EDH

    Abstract: Si1912EDH-T1-E3 Si1912EDH-T1-GE3 SI1912EDH-T1
    Contextual Info: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		Si1912EDH SC-70 2002/95/EC OT-363 SC-70 Si191 11-Mar-11 Si1912EDH-T1-E3 Si1912EDH-T1-GE3 SI1912EDH-T1 PDF

    Si1913EDH-T1-E3

    Abstract: 3K MARKING CODE Si1913EDH
    Contextual Info: Si1913EDH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.1 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1913EDH SC-70 2002/95/EC OT-363 SC-70 18-Jul-08 Si1913EDH-T1-E3 3K MARKING CODE PDF

    Si1913EDH

    Contextual Info: Si1913EDH New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.490 @ VGS = –4.5 V –1.0 APPLICATIONS


    Original     		Si1913EDH SC-70 OT-363 SC-70 S-03175--Rev. 05-Mar-01 PDF

    Contextual Info: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1917EDH SC-70 2002/95/EC OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    marking WE SC70-6

    Contextual Info: Si1913DH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.10 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1913DH SC-70 2002/95/EC OT-363 SC-70 Si1913DH-T1-E3 Si1913DH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC marking WE SC70-6 PDF

    Si1912EDH

    Contextual Info: Si1912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 APPLICATIONS


    Original     		Si1912EDH SC-70 OT-363 SC-70 S-03176--Rev. 05-Mar-01 PDF

    Si1912EDH

    Abstract: 113aa
    Contextual Info: SPICE Device Model Si1912EDH Vishay Siliconix N-Channel 20-V D-S MOSFET with Copper Leadframe CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si1912EDH 14-Feb-01 113aa PDF

    Si1913DH

    Contextual Info: SPICE Device Model Si1913DH Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si1913DH 25-Oct-02 PDF

    AN609

    Abstract: Si1913DH
    Contextual Info: Si1913DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si1913DH AN609 28-Mar-07 PDF

    AN609

    Abstract: Si1913EDH
    Contextual Info: Si1913EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si1913EDH AN609 28-Mar-07 PDF

    Contextual Info: Si1917EDH Vishay Siliconix Dual P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.370 at VGS = - 4.5 V - 1.15 0.575 at VGS = - 2.5 V - 0.92 0.800 at VGS = - 1.8 V - 0.78 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1917EDH SC-70 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Si1912EDH

    Contextual Info: SPICE Device Model Si1912EDH N-Channel 20-V D-S MOSFET with Copper Leadframe Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original     		Si1912EDH PDF

    Si1913DH

    Contextual Info: Si1913DH New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 rDS(on) (W) ID (A) 0.490 @ VGS = -4.5 V -1.0 0.750 @ VGS = -2.5 V - 0.81 1.10 @ VGS = -1.8 V - 0.67 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package


    Original     		Si1913DH SC-70 OT-363 SC-70 S-21482--Rev. 26-Aug-02 PDF

    Contextual Info: Si1913EDH Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.490 at VGS = - 4.5 V - 1.0 0.750 at VGS = - 2.5 V - 0.81 1.1 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		Si1913EDH SC-70 2002/95/EC OT-363 SC-70 Si1913EDH-T1-E3 Si1913EDH-T1-GE3 11-Mar-11 PDF

    Si1917EDH

    Contextual Info: Si1917EDH New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.370 @ VGS = –4.5 V –1.15 APPLICATIONS


    Original     		Si1917EDH SC-70 OT-363 SC-70 S-03174--Rev. 07-Mar-01 PDF