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    SI1416 Search Results

    SI1416 Datasheets (2)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI1416EDH-T1-BE3
    		Vishay Siliconix MOSFET N-CH 30V 3.9A/3.9A SC70-6 Original PDF 269.26KB
    SI1416EDH-T1-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 3.9A SOT-363 Original PDF 267.86KB
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    SI1416 Price and Stock

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    Vishay Intertechnologies SI1416EDH-T1-GE3

    Trans MOSFET N-CH 30V 3.9A 6-Pin SC-70 T/R
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    Verical () SI1416EDH-T1-GE3 36,000 3,000
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    SI1416EDH-T1-GE3 2,895 14
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    Avnet Americas SI1416EDH-T1-GE3 Tape & Reel 6,000 52 Weeks 3,000
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    Mouser Electronics SI1416EDH-T1-GE3 478,947
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    Arrow Electronics () SI1416EDH-T1-GE3 36,000 52 Weeks 3,000
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    SI1416EDH-T1-GE3 Cut Strips 2,895 1
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    Newark () SI1416EDH-T1-GE3 Tape & Reel 4,352 100
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    SI1416EDH-T1-GE3 Cut Tape 4,352 1
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    SI1416EDH-T1-GE3 Tape & Reel 3,000
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    TTI SI1416EDH-T1-GE3 Reel 261,000 3,000
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    Bristol Electronics SI1416EDH-T1-GE3 4,832
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    EBV Elektronik SI1416EDH-T1-GE3 53 Weeks 3,000
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    Vishay Intertechnologies SI1416EDH-T1-BE3

    N-CHANNEL 30-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 36AJ8053)
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    Avnet Americas () SI1416EDH-T1-BE3 Ammo Pack 1
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    SI1416EDH-T1-BE3 Tape & Reel 3,000
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    Mouser Electronics SI1416EDH-T1-BE3 23,198
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    Newark () SI1416EDH-T1-BE3 Tape & Reel 2,641 10
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    SI1416EDH-T1-BE3 Cut Tape 2,641 1
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    SI1416EDH-T1-BE3 Tape & Reel 3,000
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    EBV Elektronik SI1416EDH-T1-BE3 53 Weeks 3,000
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    Vishay Siliconix SI1416EDH-T1-GE3

    SI1416EDH-T1-GE3 N-CHANNEL MOSFET TRANSISTOR, 3.9 A, 30 V, 6-PIN SOT-363
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    RS SI1416EDH-T1-GE3 Bulk 3,000
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    Vishay Huntington SI1416EDH-T1-GE3

    MOSFET N-CH 30V 3.9A SOT-363
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    Win Source Electronics SI1416EDH-T1-GE3 3,070
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    SI1416 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si1416EDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		si1416edhan6099774u9125m+68816m6885u1252u3841m9719u28-mar-11 PDF

    67580

    Abstract: high current sot-363 p-channel mosfet
    Contextual Info: New Product Si1416EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 3.9 30 0.064 at VGS = 4.5 V 3.9 0.077 at VGS = 2.5 V 3.9 Qg (Typ.) 3.5 nC • Halogen-free According to IEC 61249-2-21


    Original     		si1416edh2002/95/ecot-363sc-70+5si1416edh-t1-ge32011/65/eu12-mar-1267580high current sot-363 p-channel mosfet PDF

    67580

    Abstract: si1416
    Contextual Info: New Product Si1416EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 3.9 30 0.064 at VGS = 4.5 V 3.9 0.077 at VGS = 2.5 V 3.9 Qg (Typ.) 3.5 nC • Halogen-free According to IEC 61249-2-21


    Original     		si1416edh2002/95/ecot-363sc-70+4si1416edh-t1-ge311-mar-1167580si1416 PDF

    Contextual Info: New Product Si1416EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 3.9 30 0.064 at VGS = 4.5 V 3.9 0.077 at VGS = 2.5 V 3.9 Qg (Typ.) 3.5 nC • Halogen-free According to IEC 61249-2-21


    Original     		si1416edh2002/95/ecot-363sc-70+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: SPICE Device Model Si1416EDH www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		si1416edh2011/65/eu2002/95/ec12-mar-12 PDF

    Contextual Info: SPICE Device Model Si1416EDH www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		si1416edh2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8si-4102si4599si4483asir166irfd120si7949si4459asir836 PDF