SI1305 Search Results

P-Channel 1.8-V G-S MOSFET sot-323

Contextual Info: Si1305EDL Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V ± 0.92 0.380 at VGS = - 2.5 V ± 0.79 0.530 at VGS = - 1.8 V ± 0.67 • Halogen-free According to IEC 61249-2-21 Definition

Si1305DL

Contextual Info: Si1305DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code

F MARKING 6PIN

Contextual Info: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition

9713

Abstract: AN609 Si1305DL
Contextual Info: Si1305DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: SPICE Device Model Si1305EDL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1305DL

Contextual Info: SPICE Device Model Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1305BDL

Contextual Info: SPICE Device Model Si1305BDL Vishay Siliconix P-Channel 8-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1305DL

Contextual Info: SPICE Device Model Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

P-Channel 1.8-V G-S MOSFET sot-323

Abstract: SI1305DL-T1 SI1305DL
Contextual Info: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) ID (A) 0.280 @ VGS = −4.5 V −0.92 0.380 @ VGS = −2.5 V −0.79 0.530 @ VGS = −1.8 V −0.67 D TrenchFETr Power MOSFET: 1.8 V Rated RoHS COMPLIANT

Si1305DL

Abstract: vishay MOSFET code marking
Contextual Info: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition

P-Channel 1.8-V G-S MOSFET sot-323

Abstract: Si1305DL
Contextual Info: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (W) ID (A) 0.280 @ VGS = - 4.5 V - 0.92 0.380 @ VGS = - 2.5 V - 0.79 0.530 @ VGS = - 1.8 V - 0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code 3 Lot Traceability

Si1305DL

Contextual Info: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition

DATASHEET 5609

Abstract: transistor 5609 8309 DATASHEET 5609 transistor 5609 transistor AN609
Contextual Info: Si1305EDL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si1305DL

Abstract: ams330
Contextual Info: Si1305EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 3 LE D XX YY Marking Code

Si1305DL

Contextual Info: SPICE Device Model Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si1305 Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (W) ID (A) 0.280 @ VGS = -4.5 V -0.92 0.380 @ VGS = -2.5 V - 0.79 0.530 @ VGS = -1.8 V - 0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code 3 Lot Traceability and Date Code

Si1305DL

Contextual Info: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si1305DL Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • TrenchFET Power MOSFET: 1.8 V • Material categorization:

4802

Abstract: AN609 174542
Contextual Info: Si1305BDL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

MARKING CODE LB

Abstract: SI1305DL
Contextual Info: Si1305DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code

99399

Abstract: SI1305DL
Contextual Info: Si1305EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 3 LE D XX YY Marking Code

Si1305DL

Abstract: Si1305DL-T1
Contextual Info: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) ID (A) 0.280 @ VGS = −4.5 V −0.92 0.380 @ VGS = −2.5 V −0.79 0.530 @ VGS = −1.8 V −0.67 D TrenchFETr Power MOSFET: 1.8 V Rated RoHS COMPLIANT

Si1305DL

Abstract: Tr431
Contextual Info: Si1305EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 3 LE D XX YY Marking Code

SI1305DL

Contextual Info: SPICE Device Model Si1305DL P-Channel 1.8-V G-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-Circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse