SI130 Search Results

Si1303DL-T1-gE3

Abstract: sc70-3 PCB PAD SI1303D SOT-323 31 MOSFET sc-70 package pcb layout F MARKING 6PIN
Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition

P-Channel 1.8-V G-S MOSFET sot-323

Contextual Info: Si1305EDL Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V ± 0.92 0.380 at VGS = - 2.5 V ± 0.79 0.530 at VGS = - 1.8 V ± 0.67 • Halogen-free According to IEC 61249-2-21 Definition

Si1301DL

Contextual Info: Si1301DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-323 SC-70 (3-Leads) 1 LG 3 S XX YY Marking Code G Lot Traceability and Date Code

DATASHEET 5609

Abstract: DATASHEET 5609 transistor 5609 5609 transistor 8309 AN609 Si1307EDL
Contextual Info: Si1307EDL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si1300BDL

Abstract: marking code KE diode
Contextual Info: Si1300BDL New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A)a 0.85 at VGS = 4.5 V 0.4 1.08 at VGS = 2.5 V 0.35 D TrenchFETr Power MOSFET D 100 % Rg Tested Qg (Typ) RoHS COMPLIANT 335 SC-70 (3-LEADS)

Si1305DL

Contextual Info: Si1305DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code

Si1302DL

Abstract: diode BY 028
Contextual Info: Si1302DL New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.64 0.700 @ VGS = 4.5 V 0.53 30 SOT-323 SC-70 (3-LEADS) G 1 S D KA XX YY Marking Code 3 Lot Traceability and Date Code 2 Part # Code

Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition

F MARKING 6PIN

Contextual Info: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si1304BDL Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.270 at VGS = 4.5 V 0.90 0.385 at VGS = 2.5 V 0.75 VDS (V) 30 Qg (Typ.) 1.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

9713

Abstract: AN609 Si1307DL
Contextual Info: Si1307DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si1303EDL
Contextual Info: Si1303EDL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si1302DL

Abstract: Si1302DL-T1-GE3 S83040
Contextual Info: Si1302DL Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.480 at VGS = 10 V 0.64 0.700 at VGS = - 4.5 V 0.53 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET SOT-323 SC-70 (3-LEADS)

Si1304DL

Abstract: Si1304DL-T1
Contextual Info: Si1304DL Vishay Siliconix N-Channel 25-V D-S MOSFET PRODUCT SUMMARY VDS (V) 25 rDS(on) (W) ID (A) 0.350 @ VGS = 4.5 V 0.75 0.450 @ VGS = 2.5 V 0.66 Qg (Typ) 13 1.3 SOT-323 SC-70 (3-LEADS) G 1 3 S D KB XX YY Marking Code Lot Traceability and Date Code 2 Part # Code

Contextual Info: SPICE Device Model Si1305EDL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1305DL

Contextual Info: SPICE Device Model Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1305BDL

Contextual Info: SPICE Device Model Si1305BDL Vishay Siliconix P-Channel 8-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1303DL

Abstract: Si1303EDL
Contextual Info: Si1303EDL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LD D XX YY Marking Code

Si1302DL

Contextual Info: SPICE Device Model Si1302DL Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1305DL

Contextual Info: SPICE Device Model Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si1307DL

Contextual Info: Si1307DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.290 @ VGS = –4.5 V "0.91 0.435 @ VGS = –2.5 V "0.74 0.580 @ VGS = –1.8 V "0.64 SOT-323 SC-70 (3-LEADS) 1 3 S LC D XX YY G Lot Traceability

SI1303DL-T1-E3

Abstract: Si1303DL
Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free

Si1302DL

Contextual Info: SPICE Device Model Si1302DL Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition