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SI1016 Datasheets (8)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI1016CX-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V SC89-6	Original	PDF		12
Si1016X	Vishay Intertechnology	Complementary N-and P-Channel 20-V (D-S) MOSFET	Original	PDF	51.17KB	7
SI1016X	Vishay Siliconix	Complementary N and P-Channel 20-V (D-S) MOSFET	Original	PDF	51.18KB	7
Si1016X-E3	Vishay	Transistor Mosfet N-CH P-CH 20V 0.485A 0.37A 6SOT-563	Original	PDF	81.39KB	8
Si1016X-T1	Vishay	Transistor Mosfet N-CH/P-CH 20V 0.485A/0.37A 6SOT-563 REEL	Original	PDF	81.39KB	8
Si1016X-T1-E3	Vishay	Transistor Mosfet N-CH/P-CH 20V 0.485A/0.37A 6SOT-563 REEL	Original	PDF	81.39KB	8
SI1016X-T1-E3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 485MA SOT563F	Original	PDF		10
SI1016X-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 485MA SC89-6	Original	PDF		10

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Vishay Intertechnologies SI1016CX-T1-GE3 Transistor: N/P-MOSFET; TrenchFET®; unipolar; complementary pair
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SI1016CX-T1-GE3				1	1 $0.54 10 $0.39 100 $0.23 1000 $0.14 10000 $0.14	Get Quote
Avnet Americas	SI1016CX-T1-GE3	Tape & Reel		52 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.09	Buy Now
Mouser Electronics	SI1016CX-T1-GE3					1 $1.02 10 $0.70 100 $0.44 1000 $0.20 10000 $0.18	Get Quote
Newark ()	SI1016CX-T1-GE3	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.15	Buy Now
	SI1016CX-T1-GE3	Tape & Reel			100	1 - 10 - 100 $0.31 1000 $0.23 10000 $0.22	Buy Now
	SI1016CX-T1-GE3	Cut Tape			1	1 $0.79 10 $0.79 100 $0.31 1000 $0.23 10000 $0.22	Buy Now
TTI	SI1016CX-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.15	Buy Now

Bristol Electronics	SI1016CX-T1-GE3		500		1	1 $0.56 10 $0.56 100 $0.21 1000 $0.16 10000 $0.16	Buy Now
Quest Components	SI1016CX-T1-GE3		400			1 $0.75 10 $0.75 100 $0.38 1000 $0.23 10000 $0.23	Buy Now
Avnet Asia	SI1016CX-T1-GE3			54 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SI1016CX-T1-GE3			53 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SI1016X-T1-GE3 N/P-CH MOSFET 700/1200 MOHMS@4.5V
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RS	SI1016X-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.28	Get Quote
Vishay Siliconix SI1016CX-T1-GE3 SI1016CX-T1-GE3 DUAL N/P-CHANNEL MOSFET TRANSISTOR, 0.6 A, 20 V, 6-PIN SOT-563
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RS	SI1016CX-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.29	Get Quote
Vishay Intertechnologies SI1016X-T1 Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SC-89 T/R
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Bristol Electronics	SI1016X-T1		1,307			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Lattice Semiconductor Corporation ISPLSI 1016E-80LT44 CPLD ispLSI® 1000EFamily 2KGates 64Macro Cells 84MHz 5V 44-Pin TQFP
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Bristol Electronics	ISPLSI 1016E-80LT44		525			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Si1016CX www.vishay.com Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 -20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.50 Qg (TYP.) • High-side switching • Ease in driving switches	Original	si1016cx 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400	Original	si1016x 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
si1016x-t1-ge3 Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400 1.6 at VGS = - 2.5 V	Original	si1016x ot-563 sc-89 18-jul-08 +1si1016x-t1-ge3	PDF
SC-89 Abstract: Si1016X Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400	Original	si1016x 2002/95/ec ot-563 sc-89 +111-mar-11	PDF
SI1016X Abstract: transistor 2432 Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400	Original	si1016x 2002/95/ec ot-563 sc-89 +218-jul-08 transistor 2432	PDF
Contextual Info: Si1016CX_GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	si1016cx an609 1333u 4747u +31949m 1247m 28-mar-11	PDF
Contextual Info: SPICE Device Model Si1016CX www.vishay.com Vishay Siliconix N- and P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n- and p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	si1016cx 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V	Original	si1016cx 2002/95/ec 11-mar-11	PDF
Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400	Original	si1016x 2002/95/ec ot-563 sc-89 +111-mar-11	PDF
SC-89 Abstract: Si1016X Si1016X-T1 Si1016X-T1-E3 Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 rDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400 1.6 at VGS = - 2.5 V	Original	si1016x ot-563 sc-89 08-apr-05 +2si1016x-t1 si1016x-t1-e3	PDF
AN609 Abstract: Si1016X Contextual Info: Si1016X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	si1016x an609 02-apr-07	PDF
Contextual Info: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V	Original	si1016cx 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V	Original	si1016cx 2002/95/ec 11-mar-11	PDF
SC-89 Abstract: Si1016X Si1016X-T1-E3 Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400 1.6 at VGS = - 2.5 V	Original	si1016x ot-563 sc-89 08-apr-05 +1si1016x-t1-e3	PDF

Contextual Info: Si1016CX www.vishay.com Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 -20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.50 Qg (TYP.) • High-side switching • Ease in driving switches	Original	si1016cx 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Si1016CX Abstract: si1016x-t1-ge3 SI1016X Contextual Info: Specification Comparison Vishay Siliconix Si1016CX vs. Si1016X Description: Package: Pin Out: N- and P-Channel 20 V D-S MOSFETs SC-89 Identical Part Number Replacements: Si1016CX-T1-GE3 replaces Si1016X-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)	Original	si1016cx si1016x sc-89 si1016cx-t1-ge3 +2si1016x-t1-ge3 21-apr-11	PDF
SI1016CX Abstract: sot-563 MOSFET D1 SI-101 Contextual Info: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V	Original	si1016cx 2002/95/ec 2011/65/eu 12-mar-12 +2sot-563 mosfet d1 si-101	PDF
SC-89 Abstract: Si1016X Contextual Info: Si1016X New Product Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 1.2 @ VGS = –4.5 V –400	Original	si1016x 08-apr-05 sc-89	PDF
si1016x-t1-ge3 Abstract: SC-89 Si1016X Si1016X-T1-E3 Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) (Ω) ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400 1.6 at VGS = - 2.5 V	Original	si1016x ot-563 sc-89 18-jul-08 +2si1016x-t1-ge3 si1016x-t1-e3	PDF
Contextual Info: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V	Original	si1016cx 2011/65/eu 2002/95/ec 12-mar-12	PDF
Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400	Original	si1016x 2002/95/ec ot-563 sc-89 +22011/65/eu 12-mar-12	PDF
SC-89 Abstract: Si1016X Contextual Info: Si1016X New Product Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 1.2 @ VGS = –4.5 V –400	Original	si1016x s-03104--rev 08-feb-01 sc-89	PDF
Contextual Info: TPS65120, TPS65121, TPS65123, TPS65124 www.ti.com SLVS531A – JUNE 2004 – REVISED MARCH 2005 SINGLE-INDUCTOR QUADRUPLE-OUTPUT TFT LCD POWER SUPPLY • FEATURES • • • • Main Output, VMAIN – Adjustable Voltage, 3.0 V to 5.6 V/25 mA – Post-Regulated for Low Ripple 5mVPP	Original	tps65120 tps65121 tps65123 tps65124 +1slvs531a	PDF
QFN-16 Abstract: TPS65120 TPS65120RGT TPS65121 TPS65121RGT TPS65123 TPS65123RGT TPS65124 LQ LB1608 Contextual Info: TPS65120, TPS65121, TPS65123, TPS65124 www.ti.com SLVS531A – JUNE 2004 – REVISED MARCH 2005 SINGLE-INDUCTOR QUADRUPLE-OUTPUT TFT LCD POWER SUPPLY • FEATURES • • • • Main Output, VMAIN – Adjustable Voltage, 3.0 V to 5.6 V/25 mA – Post-Regulated for Low Ripple 5mVPP	Original	tps65120 tps65121 tps65123 tps65124 +7slvs531a 16-pin qfn-16 tps65120rgt tps65121rgt tps65123rgt lq lb1608	PDF

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SI1016 Datasheets (8)

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Vishay Intertechnologies SI1016CX-T1-GE3

Vishay Siliconix SI1016X-T1-GE3

Vishay Siliconix SI1016CX-T1-GE3

Vishay Intertechnologies SI1016X-T1

Lattice Semiconductor Corporation ISPLSI 1016E-80LT44

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