SI1013 Search Results

SI1013CX

Abstract: 71377
Contextual Info: Si1013CX Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.760 at VGS = - 4.5 V - 0.45 1.040 at VGS = - 2.5 V - 0.40 1.5 at VGS = - 1.8 V - 1.5 • Halogen-free According to IEC 61249-2-21 Definition

si1013r

Abstract: SI1013X-T1-GE3 SC-75 SC-75A SC-89 Si1013R-T1-E3 Si1013X Si1013X-T1-E3 VISHAY MARKING Sc
Contextual Info: Si1013R/X Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 • Halogen-free Option Available • High-Side Switching •

SC-75

Abstract: SC-75A SC-89 Si1013R Si1013X Si1013X-T1-GE3
Contextual Info: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1013CX www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES • TrenchFET power MOSFET PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) ID (A) 0.760 at VGS = -4.5 V -0.45 1.040 at VGS = -2.5 V -0.40 1.500 at VGS = -1.8 V -0.32 Qg (TYP.) (nC) • 100 % Rg tested

SC-75A

Abstract: Si1013X-T1-E3 SC-75 SC-89 Si1013R Si1013R-T1-E3 Si1013X Si1013X-T1-GE3
Contextual Info: Si1013R/X Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 • Halogen-free Option Available • High-Side Switching •

2 pin crystal oscillator 24.5 mhz

Abstract: CIP-51 Si1013-A-GM XCVR
Contextual Info: Si1013-A Ultra-Low Power 8 kB, 12-bit ADC MCU with Integrated 240–960 MHz Transceiver Supply Voltage: 1.8 to 3.6 V - Typical sleep mode current < 0.1 µA; retains state and RAM contents over full supply range; fast wakeup of < 2 µs - Two built-in brown-out detectors cover sleep and active modes

SC-89-3

Contextual Info: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1013CX_GE-3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: Si1013CX Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.760 at VGS = - 4.5 V - 0.45 1.040 at VGS = - 2.5 V - 0.40 1.5 at VGS = - 1.8 V - 1.5 • Halogen-free According to IEC 61249-2-21 Definition

AN609

Abstract: Si1013R
Contextual Info: Si1013R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Specification Comparison www.vishay.com Vishay Siliconix Si1013CX vs. Si1013X Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET SC89-3 Identical Part Number Replacements: Si1013CX-T1-GE3 replaces Si1013X-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

SOT-490

Abstract: SC-75 SC-75A SC-89 Si1013R Si1013X
Contextual Info: Si1013R/X New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 1.2 @ VGS = –4.5 V –350 –20 1.6 @ VGS = –2.5 V –300 2.7 @ VGS = –1.8 V –150 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

SC-75

Abstract: SC-75A SC-89 Si1013R Si1013X
Contextual Info: Si1013R/X New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 1.2 @ VGS = –4.5 V –350 –20 1.6 @ VGS = –2.5 V –300 2.7 @ VGS = –1.8 V –150 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps,

Contextual Info: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1013CX Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.760 at VGS = - 4.5 V - 0.45 1.040 at VGS = - 2.5 V - 0.40 1.5 at VGS = - 1.8 V - 1.5 • Halogen-free According to IEC 61249-2-21 Definition

Si1013R

Contextual Info: SPICE Device Model Si1013R Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21

Contextual Info: Si1013CX Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.760 at VGS = - 4.5 V - 0.45 1.040 at VGS = - 2.5 V - 0.40 1.5 at VGS = - 1.8 V - 1.5 • Halogen-free According to IEC 61249-2-21 Definition

t416

Contextual Info: SM013R/X New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET * * * & PRODUCT SUMMARY r D S (o n) ( & ) lD(mA) 1.2 @ V GS= -4 .5 V -3 5 0 1.6 @ V GS = -2 .5 V -3 0 0 2.7 V -1 5 0 VDS(V) ' A v *N -2 0 @ V Gs = -1 .8 ( £ ) ESD Protected 2000 V FEATURES

UPG2214TB6SM

Abstract: SI4432 1SJ5 upg2214tb CP240x SI1000 Silabs iar 8051 examples coin cell pc battery holders pc motherboard schematics
Contextual Info: Si10xx-DK Si1000 A N D Si1010 D E V E L O P M E N T K I T U SER ’ S G UIDE 1. Relevant Devices The Si1000 and Si1010 Development Kits are intended as development platforms for the microcontrollers in the Si100x and Si101x MCU family, respectively. The members of these MCU families include Si1000, Si1001, Si1002,

sil f330

Abstract: sil f331 SIL T630 8051 f310 SIL F330 QFN20 C8051T602 C8051F120DK C8051F350DK C8051F360 samples C8051F544
Contextual Info: MICROCONTROLLER PRODUCT SELECTOR GUIDE www.silabs.com Robust Tools, Software and Support Our developer ecosystem ensures that you’ll have everything you need to hit the ground running. Advanced debug features enable you to fully develop and integrate hardware and software design.

Contextual Info: Re e 1 : 1 E LEC T R IC A L SPEC IFIC A T IO N S! 1.0 TURNS RATIO NDTES P 6 - P B - P 3 : ( J 6 - J 3 ) : 1CT : 1 ± 3 / <P2-P7-P1> i ( J 2 - J D I 1CT I 1,4 ± 3 °/. i 200uH MIN, @ 0,01V, lOKHz 2.0 INDUCTANCE (P 6 - P 3 )= (J6 - J3 > i lOOuH MIN, @ 0,01V, lOKHz