SI-1340 H Search Results

t016

Abstract: ME-10 PD7003 PD1302
Contextual Info: »E IbEHTflEi 0[113535 fl | 3 T. 4;. 2J^ y. ¿ //.S S 111 MITSUBISHI {DISCRETE SCI LED s Max.Ratlng* Part Number Material m AIGaAs ME1013 ME1303 AIGaAs ME7021 ME75Z1 InGaAsP ME7022 ME7522 ME7922 . InGaAsP m ' 75 AIGaAs HE1504 ME1514 In u lt e Tc S50«C

Contextual Info: APNREG Series Rad-Hard Temperature Stable Negative Voltage Regulators Adjustable and Fixed Temperature Stable Regulators Manufactured in a Certified Class-K Facility Features • Rad-Hard to 300 krad TID note 1 • Single Event Latch-up (SEL) immune (LET>87 MeV/mg/cm2)

SI 1340 H

Contextual Info: APPREG Series Rad-Hard Temperature Stable Positive Voltage Regulators Adjustable and Fixed Temperature Stable Regulators Manufactured in a Certified Class-K Facility Features • Rad-Hard to 300 krad TID note 1 • Single Event Latch-up (SEL) immune (LET>87 MeV/mg/cm2)

SI 1340

Abstract: 1340FNPC 100314 1340CMPC Lucent 1310 GR-253-CORE LT1016 TA-TSY-000983 TR-NWT-000468 Receiver sampling phase detector
Contextual Info: Data Sheet January 1999 i c r o e l e c t ro group L u ce n t T e ch n o lo g ie s Bell Labs Innovations 1340-Type Lightwave Receiver Operation at 1.3 |_im or 1.55 |am wavelengths Operating case temperature range of -4 0 °C to +85 °C Applications • Telecommunications

RFHA1023

Abstract: SEMICONDUCTOR J598
Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features „ „ „ „ „ „ Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation

SEMICONDUCTOR J598

Abstract: rfha
Contextual Info: RFHA1023A Proposed 250W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features „ „ „ „ „ „ Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation

cbic-v

Abstract: NV231A01 pv-231 AO1011 ALA110 pnp 8 transistor array ax pm hf ne TRANSISTOR ba 751 BL8024
Contextual Info: Preliminary Data Sheet May 1996 m ic ro e le c tro n ic s group Lucent Technologies Bell Labs Innovations ALA110 VHF Semicustom Linear Array Features Description • High-speed CBIC process 10.2 GHz NPN, 4.3 GHz PNP The ALA110 Semicustom Linear Array is an Integrated

OVS-33

Abstract: OVS-3303 OVS-3301
Contextual Info: SMD Super Bright LED OVS-33 Series 2.2 0.8 3.6 1 4 2 3 3.2 2.4 Features: • High Brightness • Standard PLCC-4 Package • Super Wide Viewing Angle 2 2.8 1.9 0.9 0.6 0.14 3 0.8 4 µ Radiation Diagram s 0° 10° 20° 30° 40° 1.0 50° 0.9 60° 0.8 70°

Contextual Info: sony. CXB1545Q-Y Dual 8 : 1 Multiplexer with D-F.F. Description The CXB1545Q-Y is an ultra high speed monolithic ECL 1C, which contains two 8: 1 multiplexers foll­ owed by D type flip flops. The data select S 0-S2 inputs determine which data is enabled. The selected

Contextual Info: CXB1544Q-Y SONY. Dual 8 : 1 Multiplexer with Latch Description Pin Assignment The CXB1544Q-Y is an ultra high speed monolithic ECL 1C, which contains two 8: 1 multiplexers with transparent Latched outputs. The data select S0-S2 inputs determine which data input is enabled. When

c11cf

Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse

Contextual Info: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology   RF OUT VD Pin 2 GND BASE Supports Multiple Pulse

SEMICONDUCTOR J598

Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse

rfha1020

Contextual Info: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features       Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Optimized Evaluation Board Layout for 50Operation

Contextual Info: son y. CXB1142Q Q uad 4 : 1 M ultiplexer with Latch Description Pin Assignment The CXB1142Q is an ultra high speed monolithic ECL 1C, which contains four 4: 1 multiplexers with transparent Latched outputs. The data select So, Si inputs determine which data input is enabled. When

SI 1340

Abstract: CA 1340 lt1016 equivalent pin optical fiber lucent 1340FNPC LT1016 EIA-625 GR-253-CORE TA-TSY-000983 TR-NWT-000468
Contextual Info: Data Sheet January 2000 1340-Type Lightwave Receiver • CMOS TTL link-status flag output ■ Operation at 1.3 µm or 1.55 µm wavelengths ■ x13 40 622 MB Operating at 1.1 µm through 1.6 µm wavelengths and at 155 Mbits/s, 622 Mbits/s, or 1.25 Gbits/s, the versatile

Contextual Info: S o n y ._ CXB1545Q-Y Dual 8 : 1 Multiplexer with D-F.F. Description Pin A ssignm ent The C X B 1 5 4 5 Q -Y is an ultra high speed monolithic E C L 1C, which contains two 8 : 1 multiplexers foll­ owed by D type flip flops. The data select So-S 2

cx 770

Abstract: CXB1143Q
Contextual Info: CXB1143Q/Q-Y Sony. Quad 4 : 1 Multiplexer with D-FF Description Pin Assignment The C X B 1 14 3 Q is an ultra high speed monolithic EC L 1C, which contains four 4 : 1 multiplexers foll­ owed by D type flip flops. The data select So, Si inputs determine which data is enabled. The selected

GLAR94001

Abstract: Samsung Electro-Mechanics led Samsung Electro-Mechanics SI 1340
Contextual Info: ISSUE NO : Rev: DATE OF ISSUE : 2009. 01. 16 SPECIFICATION MODEL : SLTRGB35166N [Approved Rank : VF SS , CIE(T1, T2), IV(D1, D2, D3, D4, D5, D6, D7, D8, D9, DA, DB, DC)] FULL COLOR TOP VIEW CUSTOMER : 대표 승인원 CUSTOMER : 대표 승인원 DRAWN CHECKED

8DM1

Contextual Info: sony Dual 8 : . CXB1544Q-Y 1 Multiplexer with Latch Description Pin Assignm ent The CXB1544Q-Y is an ultra high speed monolithic ECL 1C, which contains two 8: 1 multiplexers with transparent Latched outputs. The data select S 0-S2 inputs determine which data input is enabled. When

lot date code samsung

Abstract: Samsung 925 GLAR94001 DIODE BBC bbc DIODE H Beam SI 1340
Contextual Info: ISSUE NO : 08083789 Rev: 000 DATE OF ISSUE : 2008. 06. 12 SPECIFICATION MODEL : SLTRGB35066B [Approved Rank : VF S , CIE(S1, S2), IV(AAA, AAB, AAC, ABA, ABB, ABC,BAA, BAB, BAC, BBA, BBB, BBC)] RGBW TOP VIEW CUSTOMER : CUSTOMER : DRAWN CHECKED APPROVED SAMSUNG ELECTRO-MECHANICS

lte2

Abstract: 0261 230 154 LTE21009R LTE21015R
Contextual Info: DEVELOPMENT DATA | • T his data sheet contains advance Inform ation and specifications are subject to change w ithout notice. - bbSBT31 0 0 1 ^ 5 7 3 ■ LTE21009R LTE21015R Jl N AMER P H I L I P S / D I S C R E T E ObE D -

ML4432

Abstract: L8611 PD2101 ML4102A ML4402A ML4102 740nm PD1002 ME1514 L9611
Contextual Info: 6 2 49 82 9 M ITSUBISHI DISCRETE SC _ 97D 13626 T? D É flb E ^ ñ e ^ D D D iahE t. 7^- * 7 - O S ' - 1 Laser Diodes_ ) Mitsubishi laser diodes are high-performance light sources that offer extremely stable single-mode oscillation with a low threshold

Contextual Info: 10 -100 MHz Standard Hybrid Amplifier Dll“00 / Specification limit Parameters . 1 0 -1 0 0 M H z bandwidth /N n ii Q Q 7 Tem perature + 25 dB 15.0 + 0.5 +0.5/-0.5 Gain vs. temperature dB Max Gain flatness 1.0 Reverse isolation 30 30 1.6:1 1.6:1 Max 1.5:1