SI-1340 H Search Results

RFHA1023

Abstract: SEMICONDUCTOR J598
Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features „ „ „ „ „ „ Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation

SEMICONDUCTOR J598

Abstract: rfha
Contextual Info: RFHA1023A Proposed 250W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features „ „ „ „ „ „ Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation

Contextual Info: sony. CXB1545Q-Y Dual 8 : 1 Multiplexer with D-F.F. Description The CXB1545Q-Y is an ultra high speed monolithic ECL 1C, which contains two 8: 1 multiplexers foll­ owed by D type flip flops. The data select S 0-S2 inputs determine which data is enabled. The selected

Contextual Info: CXB1544Q-Y SONY. Dual 8 : 1 Multiplexer with Latch Description Pin Assignment The CXB1544Q-Y is an ultra high speed monolithic ECL 1C, which contains two 8: 1 multiplexers with transparent Latched outputs. The data select S0-S2 inputs determine which data input is enabled. When

c11cf

Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse

Contextual Info: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology   RF OUT VD Pin 2 GND BASE Supports Multiple Pulse

SEMICONDUCTOR J598

Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse

rfha1020

Contextual Info: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features       Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Optimized Evaluation Board Layout for 50Operation

ECJ2VB1H104K

Abstract: air surveillance system diagram using radar Gan hemt transistor RFMD 28F0181-1SR-10
Contextual Info: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology   RF OUT VD Pin 2 GND BASE Supports Multiple Pulse

Contextual Info: son y. CXB1142Q Q uad 4 : 1 M ultiplexer with Latch Description Pin Assignment The CXB1142Q is an ultra high speed monolithic ECL 1C, which contains four 4: 1 multiplexers with transparent Latched outputs. The data select So, Si inputs determine which data input is enabled. When

Contextual Info: S o n y ._ CXB1545Q-Y Dual 8 : 1 Multiplexer with D-F.F. Description Pin A ssignm ent The C X B 1 5 4 5 Q -Y is an ultra high speed monolithic E C L 1C, which contains two 8 : 1 multiplexers foll­ owed by D type flip flops. The data select So-S 2

cx 770

Abstract: CXB1143Q
Contextual Info: CXB1143Q/Q-Y Sony. Quad 4 : 1 Multiplexer with D-FF Description Pin Assignment The C X B 1 14 3 Q is an ultra high speed monolithic EC L 1C, which contains four 4 : 1 multiplexers foll­ owed by D type flip flops. The data select So, Si inputs determine which data is enabled. The selected

8DM1

Contextual Info: sony Dual 8 : . CXB1544Q-Y 1 Multiplexer with Latch Description Pin Assignm ent The CXB1544Q-Y is an ultra high speed monolithic ECL 1C, which contains two 8: 1 multiplexers with transparent Latched outputs. The data select S 0-S2 inputs determine which data input is enabled. When

lot date code samsung

Abstract: Samsung 925 GLAR94001 DIODE BBC bbc DIODE H Beam SI 1340
Contextual Info: ISSUE NO : 08083789 Rev: 000 DATE OF ISSUE : 2008. 06. 12 SPECIFICATION MODEL : SLTRGB35066B [Approved Rank : VF S , CIE(S1, S2), IV(AAA, AAB, AAC, ABA, ABB, ABC,BAA, BAB, BAC, BBA, BBB, BBC)] RGBW TOP VIEW CUSTOMER : CUSTOMER : DRAWN CHECKED APPROVED SAMSUNG ELECTRO-MECHANICS

Contextual Info: SONY CORP/COMPONENT PRODS 50E D son y. • &3flE363 0003^37 T! P in A ss ig n m e n t The CXB1143Q is an ultra high speed monolithic ECL 1C, which contains four 4: 1 multiplexers foll­ owed by D type flip flops. The data select So, Si inputs determine which data is enabled. The selected

Contextual Info: NEC n n - R a i i 1310m F P - L D M o d u l e O.lif OD-8344 is a high performance 13l0nm Multiple Quantum Well (MQW) LD module. This device can achieve stable operation over wide temperature range of -40 to +85 “C . An InGaAs PIN monitor photodiode is

QLM3S882-005

Contextual Info: LASERTRON S3Ö3 3SS 45E D INC QQDDSIa'i 2 H L S R T *-V / “ £>7 Q3LÊPJ33S3 2 • ■ ■ ■ ■ 1.6 mW Analog Laser Analog/CATV performance 1.6 mW rated output power 1300 nm wavelength Specified CNR, CSO, CTB characteristics Cooled 14-pin DIL package, single-mode fiber

Contextual Info: S ON Y CORP/COMPONENT PRODS 50E D A3fl23fl3 OOOMOCm b «SONY CXB1544Q-Y SO N Y. Dual 8 : 1 M ultiplexer with Latch Description Pin Assignment The CXB1544Q-Y is an ultra high speed monolithic ECL 1C, which contains two 8 : 1 multiplexers with transparent Latched outputs. The data select S 0-S2

Contextual Info: SONY CORP/COMPONENT P RODS SOE D A3flB3fl3 0004007 1 «SONY CXB1545Q-Y SONY Dual 8 : 1 Multiplexer with D-F.F. D e scrip tio n P in A ss ig n m e n t The CXB1545Q-Y is an ultra high speed monolithic ECL 1C, which contains two 8: 1 multiplexers foll­ owed by D type flip flops. The data select S0-S2

LCP E4008

Contextual Info: Ro VER LEA H S SI D F CO ON RE M SA E PL R IA E NT Features Applications • E6 series optional ■ Input/output of DC/DC converters ■ Unit height of 5.5 mm ■ Power supplies for: • Portable communication equipment • Camcorders • LCD TVs • Car radios

RS-435

Abstract: XKD99Z RS435 99zc 60-F33 un300 36F36
Contextual Info: XKD9 9 Z £ 5iJSfëE&KàS*-pt 1 & X< s i+Ä - ít-%s . Jt ï W ftSííl^Pffl . - (H a > f o s íu a s ® i t , e t s » , m î * n * S !ï e ü a s ï^ ^ S ît t ^ m . i. j s s ä b e e * § ä F f f ln S G W f f iìf f i. f C I . fe ê - S6SÎ. S S L S « W i5 ifi!a S R S , A R S I . Z K IM , ¡Œ M æ ^ îflM .

1340FNPC

Abstract: 1340FMPC EIA-625 GR-253-CORE LT1016 TR-NWT-000468 lt1016 equivalent 108162322
Contextual Info: Data Sheet January 2000 1340-Type Lightwave Receiver • CMOS TTL link-status flag output ■ Operation at 1.3 µm or 1.55 µm wavelengths ■ Operating case temperature range of –40 °C to +85 °C Applications Operating at 1.1 µm through 1.6 µm wavelengths and at

BFR106

Abstract: 2I k
Contextual Info: SIEMENS BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!

IRHF593230

Abstract: IRHF597230
Contextual Info: PD - 94450 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number IRHF597230 IRHF593230 Radiation Level RDS(on) ID 100K Rads (Si) 0.54Ω -4.5A 300K Rads (Si) 0.54Ω -4.5A International Rectifier’s R5TM technology provides