SI APD 400- 700 NM Search Results

Contextual Info: Si APD S12023シリーズなど 低バイアス動作タイプ800 nm帯用APD 800 nm帯の近赤外域用のSi APDで、200 V以下の低電圧で動作が可能です。空間光伝送・光波距離計などの用途に適して います。 特長 用途

Contextual Info: Si APD S6045/S12060シリーズ 低温度係数タイプ800 nm帯用APD 800 nm帯の近赤外域用のSi APDです。動作電圧の温度係数が低く設計されており、広い温度範囲で安定した動作が可能です。 光波距離計・空間光伝送などの用途に適しています。

Si apd photodiode

Abstract: parameter vk 45 Si apd photodiode 700 nm 2SC3138Y apd 400- 700 nm 2SC3138-Y S8328 420nm quadrant avalanche photodiode Photodiode apd high sensitivity
Contextual Info: US Patent Pending APD Si APD S8328 Quadrant APD with high bluish-violet sensitivity S8328 is a quadrant APD Avalanche Photodiode having a gain of 2-100. The peak gain lies at 420 nm and creates a high sensitivity for blue to violet minor signals. An on-chip bias control circuit gives the most stable output from low to high temperature.

Contextual Info: Si APD S12023 series, etc. Low bias operation, for 800 nm band These are 800 nm band near-infrared Si APDs that can operate at low voltages, 200 V or less. They are suitable for applications such as FSO free space optics and optical rangefinders. Features

Contextual Info: Si APD S12023 series, etc. Low bias operation, for 800 nm band These are 800 nm band near-infrared Si APDs that can operate at low voltages, 200 V or less. They are suitable for applications such as FSO free space optics and optical rangefinders. Features

Contextual Info: Si APD S6045/S12060 series Low temperature coefficient type APD for 800 nm band The S6045 and S12060 series are near infrared Si APDs developed for use in the 800 nm wavelength band. These APDs are designed so that the temperature coefficient of the operating voltage is low enough to ensure stable operation over a wide

Contextual Info: Si APD S6045/S12060 series Low temperature coefficient type APD for 800 nm band The S6045 and S12060 series are near infrared Si APDs developed for use in the 800 nm wavelength band. These APDs are designed so that the temperature coefficient of the operating voltage is low enough to ensure stable operation over a wide

Contextual Info: Selection guide - March 2014 Si APD Avalanche Photodiode High-speed, high sensitivity photodiodes having an internal gain mechanism HAMAMATSU PHOTONICS K.K. S i A v a l a n c h e P h o t o d i o d e Si APD High-speed, high sensitivity photodiodes having an internal gain

PerkinElmer Avalanche Photodiode

Contextual Info: Features and Benefits Introduction The short wavelength enhanced silicon avalanche photodiode APD by PerkinElmer (Model C30739ECERH) is designed for low light level applications covering the spectral range from less than 400 nm to greater than 700 nm. Benefits

S12926

Abstract: S12926-05
Contextual Info: セレクションガイド 2015.1 Si APD アバランシェ・フォトダイオード 内 部 増 倍 機 能 を もった 高 速・高 感 度 の フォト ダ イ オ ード Si AVALANCHE PHOTODIODES S i P h o t o d i o d e Si APD (アバランシェ・フォトダイオード)

Contextual Info: DATASHEET Photon Detection C30739ECERH Series Short Wavelength Enhanced Silicon Avalanche Photodiode Key Features The C30739ECERH large area silicon avalanche photodiode APD is intended for use in a wide variety of broadband low light level applications covering the spectral range from below 400 to over 700 nm.

Contextual Info: DATASHEET Photon Detection LLAM Series 900/1060/1550/1550E Si and InGaAs Low-Light Analog APD Receiver Modules LLAM Key Features E LLAM-1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.

Contextual Info: Si APD S8890シリーズ 近赤外域で高感度のAPD 特長 用途 高感度 YAGレーザの検出 長波長光の検出 高ゲイン 低端子間容量 構成／絶対最大定格 型名 S8890-02 S8890-05 S8890-10 S8890-15 S8890-30 外形寸法図/ 窓材*1

apd array

Contextual Info: Si APD array S8550-02 4 x 8 element APD array with low noise and enhanced short-wavelength sensitivity The S8550-02 is an APD avalanche photodiode array designed for short wavelength detection, featuring low noise and low terminal capacitance. The S8550-02 also offers uniform gain and small crosstalk between each element.

Contextual Info: Si APD array S8550-02 4 x 8 element APD array with low noise and enhanced short-wavelength sensitivity The S8550-02 is an APD avalanche photodiode array designed for short wavelength detection, featuring low noise and low terminal capacitance. The S8550-02 also offers uniform gain and small crosstalk between each element.

Contextual Info: PHOTODIODE Si APD S8664 series Short wavelength type APD Features Applications l Low-light-level measurement l Analytical equipment l High sensitivity at visible range l Low noise l High gain l Low capacitance • General ratings / Absolute maximum ratings

Si apd photodiode 800 nm

Abstract: S8664-30K S8664 S8664-02K S8664-05K S8664-10K S8664-20K S8664-50K S8664-55 l420
Contextual Info: PHOTODIODE Si APD S8664 series Short wavelength type APD Features Applications l Low-light-level measurement l Analytical equipment l High sensitivity at visible range l Low noise l High gain l Low capacitance • General ratings / Absolute maximum ratings

KAPDA0036EA

Contextual Info: PHOTODIODE Si APD S8664 series Short wavelength type APD Features Applications l Low-light-level measurement l Analytical equipment l High sensitivity at visible range l Low noise l High gain l Low capacitance • General ratings / Absolute maximum ratings

Contextual Info: PHOTODIODE Si APD S8664 series Short wavelength type APD Features Applications l Low-light-level measurement l Analytical equipment l High sensitivity at visible range l Low noise l High gain l Low capacitance • General ratings / Absolute maximum ratings

S8664

Abstract: S8664-02K S8664-05K S8664-10K S8664-20K S8664-30K S8664-50K S8664-55
Contextual Info: PHOTODIODE Si APD S8664 series Short wavelength type APD Features Applications l Low-light-level measurement l Analytical equipment l High sensitivity at visible range l Low noise l High gain l Low capacitance • General ratings / Absolute maximum ratings

Si apd photodiode 700 nm

Abstract: S8664 S8664-02K S8664-05K S8664-10K S8664-20K S8664-30K S8664-50K S8664-55 420nm
Contextual Info: PHOTODIODE Si APD S8664シリーズ 短波長タイプAPD 特長 用途 l 可視域で高感度低雑音 l 高ゲイン l 低容量 l 微弱光計測 l 分析用機器 • 一般定格／絶対最大定格 型名 外形寸法図 /窓材 *1 S8664-02K S8664-05K

FND-100Q

Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Contextual Info: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.

Hamamatsu avalanche diode

Abstract: ortec E678-12M pdf of 741 ic telephone hybrid R7110U-40 TPMH1239E03
Contextual Info: COMPACT HYBRID PHOTO-DETECTOR PRELIMINARY DATA APR. 2000 with Si-Avalanche Diode Target R7110U-40 PATENT PENDING FEATURES APPLICATIONS High Q.E. from 450 to 650 nm Low Excess Noise High Gain Operable in High Magnetic Fields Low Hysteresis High Energy Physics

R7110U-40

Abstract: pdf of 741 ic telephone hybrid TPMH1239E03 E678-12M
Contextual Info: COMPACT HYBRID PHOTO-DETECTOR PRELIMINARY DATA SEPT. 2000 FEATURES with Si-Avalanche Diode Target R7110U-40 APPLICATIONS ● High Q.E. from 450 to 650 nm ● Low Excess Noise ● High Gain ● Operable in High Magnetic Fields ● Low Hysteresis ● High Energy Physics