SI 9503 Search Results
SI 9503 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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5962-8950303GC |
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ICM7555M - Dual Marked (ICM7555MTV/883) |
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10112359-5035LF |
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Mini-SAS HD Cable Assemblies, High Speed Input Output Connectors, 8X to 8X Cable, Passive, 6Gb/s, 24 AWG, 3.5m, PVC jacket. | |||
10117950-3020LF |
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Mini-SAS HD Cable Assemblies, High Speed Input Output Connectors, 8X to 8X Cable, Passive, 12Gb/s, 28 AWG, 2.0m, PVC jacket. | |||
10117950-3030LF |
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Mini-SAS HD Cable Assemblies, High Speed Input Output Connectors, 8X to 8X Cable, Passive, 12Gb/s, 28 AWG, 3.0m, PVC jacket. | |||
10117950-3015HLF |
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Mini-SAS HD Cable Assemblies, High Speed Input Output Connectors, 8X to 8X Cable, Passive, 12Gb/s, 28 AWG, 1.5m, Halogen free jacket. |
SI 9503 Price and Stock
Skyworks Solutions Inc SI5345B-D09503-GMRClock Synthesizer / Jitter Cleaner Low-jitter, 10-output, any frequency (< 350 MHz), any output jitter attenuator |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI5345B-D09503-GMR |
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Skyworks Solutions Inc SI5345B-D09503-GMClock Synthesizer / Jitter Cleaner Low-jitter, 10-output, any frequency (< 350 MHz), any output jitter attenuator |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI5345B-D09503-GM |
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Get Quote |
SI 9503 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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mil-std-1750a
Abstract: AKO3 abo cpu ako speed control abb eiw mps 0815 td1513 MIL-STD-1750 mps 0812 L64500
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L64550 MILSTD1750A L64550 L64500 MIL-STD-1750A AKO3 abo cpu ako speed control abb eiw mps 0815 td1513 MIL-STD-1750 mps 0812 | |
mil-std-1750a
Abstract: MILSTD1750A 1750a AKO3 TST02 L6450
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L64550 MILSTD1750A L64500 MIL-STD-1750A 1750a AKO3 TST02 L6450 | |
Contextual Info: Silicon360 S512 Series SRAMs 512Kx16,x32,x40-bit Radiation Tolerant Static RAM Features: • Fabricated in 90 nm process technology using custom EPI wafers • Total Dose: 300K rads Si • Prompt Dose: No burn out and latch-up; Dose rate ranging from 1.0E9 to |
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Silicon360 512Kx16 x40-bit 8E11rad/second 106MeV-cm2 84-Lead | |
74LV257
Abstract: 74LV257PW MS-012AB
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74LV257 SQT402-1 MO-153 74LV257 74LV257PW MS-012AB | |
Contextual Info: SILICON360 S51232FVRH: 512K x 32 Bit Radiation Tolerant Static RAM Product Feature Sheet Features • Fabricated in 90 nm process technology using custom EPI wafers • Total Dose: 300K rads Si • Prompt Dose: No burn out and latchup; Dose rate ranging from 1.0E9 to |
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SILICON360 S51232FVRH: 8E11rad/second IO0-IO31 silicon360 | |
Contextual Info: March 2012 Contract Low Dose Rate Irradiation Services Intersil introduces low dose rate irradiation services at 0.01 rad Si /s on a contract basis, using a panoramic 60Co irradiator in the Palm Bay, FL facility. External view of the low dose rate 60Co irradiator. |
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1-888-INTERSIL D-85737 LC-105 | |
74LV393PW
Abstract: 74LV393 12v 2cp
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74LV393 TSSOP14: SQT402-1 MO-153 74LV393PW 12v 2cp | |
12v to 220 v ac inverter SCHEMATIC DIAGRAM
Abstract: dc to ac inverter schematic diagram 74HCU04 74LVU04 74LVU04D 74LVU04N 74LVU04PW LVU04
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74LVU04 74LVU04 74HCU04. SQT402-1 MO-153 12v to 220 v ac inverter SCHEMATIC DIAGRAM dc to ac inverter schematic diagram 74HCU04 74LVU04D 74LVU04N 74LVU04PW LVU04 | |
Contextual Info: SILICON360 S51216FVRH: 512K x 16-Bit Radiation Tolerant Static RAM Product Feature Sheet Features • Fabricated in 90 nm process technology using custom EPI wafers • Total Dose: 300 K rads Si • Prompt Dose: No burn out and latchup; Dose rate ranging from 1.0E9 to |
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SILICON360 S51216FVRH: 16-Bit 8E11rad/second 106MeV-cm2 IO0-IO31 silicon360 | |
74LV11
Abstract: 74LV11PW
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74LV11 SQT402-1 MO-153 74LV11 74LV11PW | |
273505Contextual Info: NRR ï 2 1993 COM’L: D/2 SI Advanced Micro Devices PAL16R8D/2 Series 10 ns 20-Pin TTL Programmable Array Logic DISTINCTIVE CHARACTERISTICS • 10 ns maximum propagation delay Power-up reset for initialization ■ Drop in replacement for PAL16R8D series with same specifications |
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PAL16R8D/2 20-Pin PAL16R8D PAL16L8D/2, PAL16R8D/2, PAL16R6D/2, PAL16R4D/2) 273505 | |
Contextual Info: S51216FVRH: 512K x 16-Bit Radiation-Tolerant Static RAM Product Feature Sheet Features • Fabricated in 90 nm process technology using custom EPI wafers • Total Dose: 300 krads Si • Prompt Dose: No burn out and latchup; Dose rate ranging from 1.0 E9 to 1.8 |
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S51216FVRH: 16-Bit E11rad/second IO0-IO31 silicon360 | |
74LV125
Abstract: 74LV125PW
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74LV125 OT337-1 MO-150AB 74LV125 74LV125PW | |
74LV74
Abstract: 74LV74PW
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74LV74 74LV74 74HC/HCT74. SQT402-1 MO-153 74LV74PW | |
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74LV10
Abstract: 74LV10PW
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74LV10 SQT402-1 MO-153 74LV10 74LV10PW | |
74LV393PW
Abstract: 74LV393 12v 2cp
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74LV393 SQT402-1 MO-153 74LV393PW 74LV393 12v 2cp | |
74LVU04
Abstract: el inverter Schematic 74HCU04 74LVU04D 74LVU04N 74LVU04PW LVU04
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74LVU04 74LVU04 74HCU04. SQT402-1 MO-153 el inverter Schematic 74HCU04 74LVU04D 74LVU04N 74LVU04PW LVU04 | |
Contextual Info: SILICON360 S51240FVRH: 512K x 40 Bit Radiation Tolerant Static RAM Product Feature Sheet Features • Fabricated in 90 nm process technology using custom EPI wafers • Total Dose: 300 K rads Si • Prompt Dose: No burn out and latchup; Dose rate ranging from 1.0E9 to |
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SILICON360 S51240FVRH: 8E11rad/second 106MeV-cm2 IO0-IO31 silicon360 | |
AIC-6260AL
Abstract: aic6260 ASW-1240 AHA-1640 aic-6260 ASW-1210 aha 1640 IBM 286 schematic AIC6260AQ AIC-6260/6360/6370
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AIC-6260AL: AIC-6260AQ: 68-pin 80-pin AIC-6260 16-bit AIC-6260, 128-byte AIC-6260AL aic6260 ASW-1240 AHA-1640 ASW-1210 aha 1640 IBM 286 schematic AIC6260AQ AIC-6260/6360/6370 | |
74LV107
Abstract: 74LV107PW MS-012AB
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74LV107 SQT402-1 MO-153 74LV107 74LV107PW MS-012AB | |
f03TContextual Info: OMTDML [RiEILEM Si Final Electrical Specifications L in t iA B TECHNOLOGY LTC1516 Micropower, Regulated 5V Charge Pump DC/DC Converter May 1996 FCfflUIKS D€SCRIPTIOn • Ultralow Power: Typical Operating Ice = 12 mA ■ Short Circuit/Thermal Protection The LTC 1516 is a micropower charge pump DC/DC |
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LTC1516 12yAtypical 254mm) LT1054 LTC1144 LTC1261 LTC1262 LTC1550/51 100mA f03T | |
74LV27
Abstract: 74LV27PW MS-012AB
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74LV27 SQT402-1 MO-153 74LV27 74LV27PW MS-012AB | |
Contextual Info: I INFAR SYSTEMS LSVCEllN ABSOLUTE MAXIMUM KATIMGS 25 Degree C Gate-Drain or Gate-Source Voltage: 25V Gate Current: 10iA Total Device Dissipation at TA = 25 Degree C: 300aH Storage Teiperature Sange: -55 to +175 Degree C S i6 ¿ S ? •,[o- * Si Electrical Characteristics (25 Degree C unless otherwise noted) |
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300aH | |
74LV08
Abstract: 74LV08PW
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74LV08 SQT402-1 MO-153 74LV08 74LV08PW |