SHV06 Search Results

FMPG2F

Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179

RLS4153

Abstract: RLS-71 RLS-92 357B RLS141 RLS245 RLS4148 RLS4149 RLS4150 RLS4151
Contextual Info: 6 3 - ft m % tt « V (V) P D o D O O O D a a — — — — — — — — — — A A A A A A A A A A 40 250 100 100 50 75 40 75 35 100 35 220 75 75 50 50 30 50 25 75 a u O O P — — — — — A A A A A D n D p P a a — — — — — — — y

1S871A

Abstract: RLS4450 RLS-71 sg-5t 357B RLS141 RLS245 RLS4148 RLS4149 RLS4150
Contextual Info: 6 3 - ft m % tt « V (V) P D o D O O O D a a — — — — — — — — — — A A A A A A A A A A 40 250 100 100 50 75 40 75 35 100 35 220 75 75 50 50 30 50 25 75 a u O O P — — — — — A A A A A D n D p P a a — — — — — — — y

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

ti marking

Abstract: SHV-20 HVR-1X SHV-16 HVR-1X 7 SHV-02 SHV-03 SHV-08X SHV-08 SHV-10
Contextual Info: E 3 SANKEN ELECTRIC CO LT» •“•i 3SE » 7^0741 High Voltage Diodes D00QÔD1 3 ISAKd ' f ' D S - ' O q VRM:2~24kV I !lo:2mA/350mA 3S 3 SB8H Rating/ Characteristics V rsm kV Absolute Maximum Ratings Vrm lo Tc If s m ro (A) (kV) (mA) Tstg <’C) 5 0 H z H a lf S in e

diode 8603

Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

SHV-06JN

Abstract: SHV-01JN SHV-05J
Contextual Info: High-voltage Diodes for Igniters Part No. VRM kV Electrical Characteristics (Ta=25ºC) Absolute Maximum Ratings IRSM IRSM IF (AV) (mA) (mA) (A) Peak value of 50 Hz Peak value single shot half-wave triangular of 50 Hz wave signal half-wave with 100µs half-power

SMA2409M

Abstract: MN638S SSD103 SPF3004 sta464c spf0001 spf7211 relay Re 04501 sta509a SLA2402M
Contextual Info: 注意 ●本書に記載されている内容は改良などにより予告なく変更することがあります。 ご使用の際には最新の情報であることをご確認ください。 ●本書に記載されている動作例及び回路例は、使用上の参考として示したもので、

high voltage rectifier diode

Abstract: SHV-06HN
Contextual Info: Certificate TH97/10561QM SHV-06HN HIGH VOLTAGE RECTIFIER DIODE DO - 41 PRV : 6000 Volts Io : 2 mA FEATURES : * * * * * * Certificate TW00/17276EM 1.00 25.4 MIN. 0.108 (2.74) 0.078 (1.99) Glass passivated junction chip High voltage capability High surge current capability

SHV-03

Contextual Info: 4-5 High Voltage Rectifier Diodes Category Part Nubmer V RM kV IF(AV) (mA) IFSM (A) 50Hz Tc (°C) Tstg (°C) VF (V) max Single Half Sine Wave General-purpose IR IF (µA) (mA) VR=V RM max IR(H) (µA) VR=V RM max Ta (°C) trrq (µs) IF/IRP (mA) Mass (g) Package

sanken power transistor 2SA1216

Abstract: 2SC2922 SANKEN 2SC2922 sanken transistor sanken 2sc2922 Sanken 2SC2921 transistor 2sb1624 2sd2493 Sanken Transistor Mt 200 sanken 2sa1216 D01EC0 2sc2921 sanken
Contextual Info: DISCRETE DEVICES DISCRETE BIPOLAR POWER TRANSISTORS Part Numbers PNP NPN PD W VCEO (V) IC (A) 80 80 80 80 120 120 140 180 140 180 200 200 6 6 6 6 8 8 10 15 10 15 15 17 fT (MHz) hfe (min) PNP/NPN Package Standard, Single-Emitter Types 2SA1725 2SA1726 2SA1693

Contextual Info: HVGT SHV-06 6kV 5mA HIGH VOLTAGE DIODES Outline Drawings : mm The SHV series of diodes have been miniaturized by resin on the assumption fo remolding. Measures against creeping discharge and humidity stress must Cathode Mark Lot No. be taken when using these diodes.

fn651

Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

RBA-401

Abstract: RBA402 RBA-402 LB-156 RBV-602 RBA401 RBV-406 RBV404 lb156 FMM-36S
Contextual Info: RECTIFIER DIODES CENTER-TAP TÏPE MICROWAVE OVEN DIODES Absolute Maximum Ratings Type No. V rm lo I f sm (V) (A) with Fin (A) FMM-22S.R 200 FMM-24S.R 400 FMM-26S.R 600 FMM-31S.R 100 FMM-32S.R 200 FMM-34S.R 400 FMM-36S.R 600 Absolute Maximum Ratings Elee. Char, at 25°C

sanken power transistor 2SA1216

Abstract: 2SC2922 sanken transistor 2SC2922 SANKEN 2sc3263 sanken 2SA1186 SANKEN Sanken Transistor Mt 200 2SD2494 sanken power transistor 2sa1295 D01EC0 2sc2837
Contextual Info: DISCRETE DEVICES DISCRETE BIPOLAR POWER TRANSISTORS Part Numbers PNP NPN PD W VCEO (V) IC (A) 80 80 80 80 120 120 140 180 140 180 200 200 6 6 6 6 8 8 10 15 10 15 15 17 fT (MHz) hfe (min) PNP/NPN Package Standard, Single-Emitter Types 2SA1725 2SA1726 2SA1693

B 2306 BARRIER RECTIFIER

Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

Sanken rb60

Abstract: FMLG12 CTB34 sanken shv16 rb60 RECTIFIER
Contextual Info: E 3 SANKEN ELECTRIC CO LT» •“•i 3SE » 7 ^ 0 7 4 1 D00QÔD1 3 High Voltage Diodes Rating/ Characteristics V rsm kV VRM:2~24kV Absolute Maximum Ratings Vrm lo Tc If s m ro (A) (kV) (mA) 5 0 H z H a lf S in e W ave S in g le P u ls e Type No. SHV-02

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

Contextual Info: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)

UX-F5B

Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Contextual Info: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

FMPG2F

Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
Contextual Info: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in

357B

Abstract: RLS141 RLS245 RLS4148 RLS4149 RLS4150 RLS4151 RLS4153 RLS4154 RLS415Z
Contextual Info: 6 3 - ft m RLS141 RLS245 RLS4148 RLS4149 RLS4150 RLS4151 RLS4152 RLS4153 RLS4154 RLS4446 RLS4447 RLS4448 RLS4449 RLS4450 RLS4454 RLS4606 RLS— 71 RLS— 7 2 RLS— 7 3 RLS— 92 RLS— 9 3 RLS— 94 RP1H RU 1 RU1A RU1B RU 1C SF-1 S G -5 T + SG -5T (-)

Contextual Info: HVCA SHV-06 6kV 5mA HIGH VOLTAGE DIODES Outline Drawings : mm The SHV series of diodes have been miniaturized by resin on the assumption fo remolding. Measures against creeping discharge and humidity stress must Cathode Mark Lot No. be taken when using these diodes.