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    SHARP AMPLIFIER SM 30 Search Results

    SHARP AMPLIFIER SM 30 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TA75W01FU
    Toshiba Electronic Devices & Storage Corporation Operational Amplifier, Bipolar (358) type Dual Op-Amp, 3V to 12V, SOT-505 Datasheet
    TC75S67TU
    Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 2.2V to 5.5V, Low Noise type:VNI=6nV/√Hz@1kHz, SOT-353F Datasheet
    TC75S102F
    Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Datasheet
    TC75S103F
    Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.8V to 5.5V, I/O Rail to Rail, IDD=100μA, SOT-25 Datasheet
    TC75S51F
    Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 7.0V, IDD=60μA, SOT-25/SOT-353 Datasheet

    SHARP AMPLIFIER SM 30 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    6205 tube

    Abstract: 6205 subminiature sylvania 6205 tube 6205 BALLANTINE pentode 6205 Sylvan 5840 Sylvania 5840 400C 5840 TUBE
    Contextual Info: SYLVANIAfirap engineering data service QU ICK R E F E R E N C E DATA MECHANICAL DATA B u l b . • T-3 B a s e . E8-10, Subminiature Button Flexible Leads


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    E8-10, 6205 tube 6205 subminiature sylvania 6205 tube 6205 BALLANTINE pentode 6205 Sylvan 5840 Sylvania 5840 400C 5840 TUBE PDF

    84-1LMI

    Abstract: NN12 P35-5104-000-200 MARCONI power MARCONI amplifier
    Contextual Info: P35-5104-000-200 HEMT MMIC LOW NOISE AMPLIFIER, 2 - 20GHz Features • • • • • • Cascode Configuration 10 dB Gain Typical pHEMT technology AGC control with gate bias Less than 4.0 dB noise figure 2 - 18GHz Description The P35-5104-000-200 is a high performance low noise 2 - 20GHz Gallium Arsenide monolithic travelling wave


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    P35-5104-000-200 20GHz 18GHz P35-5104-000-200 20GHz 462/SM/01503/200 84-1LMI NN12 MARCONI power MARCONI amplifier PDF

    MARCONI amplifier

    Abstract: 84-1LMI NN12 P35-5112-000-200
    Contextual Info: P35-5112-000-200 HEMT MMIC LNA 8.5 – 10.5GHz Features • • 19dB Gain Typical 1dB Noise Figure Description The P35-5112-000-200 is an 8.5 – 10.5GHz Gallium Arsenide low noise amplifier. This product is intended for use in a wide range of applications including telecommunications, instrumentation and electronic warfare.


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    P35-5112-000-200 P35-5112-000-200 462/SM/02343/200 MARCONI amplifier 84-1LMI NN12 PDF

    sm 0038

    Abstract: sm 0038 data sheet sm 0038 datasheet 84-1LMI NN12
    Contextual Info: P35-5113-000-200 HEMT MMIC LNA 20 - 32GHz Features • • • Typical 2.1dB Noise Figure @24GHz &28GHz Self Biased Design 2.36 x 0.94mm Die Size Description The P35-5113-000-200 is a 20-32GHz Gallium Arsenide Self-Biased low noise amplifier. This product is intended


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    P35-5113-000-200 32GHz 24GHz 28GHz P35-5113-000-200 20-32GHz 20-32GHz 462/SM/02606/200 sm 0038 sm 0038 data sheet sm 0038 datasheet 84-1LMI NN12 PDF

    Marconi

    Abstract: MARCONI amplifier NN12 MARCONI power
    Contextual Info: P35-5122-000-200 HEMT DRIVER AMPLIFIER 8.5 – 10.5GHz Features • • • 26dBm Output Power @6V 18dB Typical Gain Small 2.49 x 1.4mm Die Size Description The P35-5122-000-200 is a high performance 8.5-10.5GHz Gallium Arsenide driver amplifier. This product is


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    P35-5122-000-200 26dBm P35-5122-000-200 100mA, 170mA 462/SM/02348/000 Marconi MARCONI amplifier NN12 MARCONI power PDF

    Ultrasonic cleaner circuit diagram

    Abstract: MARCONI power P35-5133-000-200 H40P NN12
    Contextual Info: P35-5133-000-200 HEMT MMIC 0.5W POWER AMPLIFIER, 24GHz Features • • • • Gain; 19dB typical @ 24GHz P-1dB; 29dBm typical @ 24GHz 20% PAE 0.20 um pHEMT technology Description The P35-5133-000-200 is a high performance 24GHz Gallium Arsenide power amplifier, capable of output powers


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    P35-5133-000-200 24GHz 29dBm P35-5133-000-200 24GHz 463/SM/02226/000 Ultrasonic cleaner circuit diagram MARCONI power H40P NN12 PDF

    TT 2222 Horizontal Output Transistor

    Abstract: TT 2222 Horizontal Output voltage jv3 transistor 10X10 186C LZ2547 san ji electronics sharp CCD Image Sensor JV3 diode transistor for RF amplifier
    Contextual Info: LZ2547 • Single-voltage 5 V operation 1/5-type Color CCD Area Sensor for PAL Description Pin Connections LZ2547 is a 1/5-type (3.6 mm) solid state imaging device driven by only 5 V single power supply. Having about 220,000 pixels (horizontal 384 X vertical 582), it


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    LZ2547 LZ2547 TT 2222 Horizontal Output Transistor TT 2222 Horizontal Output voltage jv3 transistor 10X10 186C san ji electronics sharp CCD Image Sensor JV3 diode transistor for RF amplifier PDF

    84-1LMI

    Abstract: NN12 P35-5117-000-200
    Contextual Info: P35-5117-000-200 HEMT LNA 37-42GHz Features • • 20dB gain 3 dB Noise Figure Description This datasheet shows the performance of a 37 – 42GHz Gallium Arsenide Low Noise Amplifier. This product is intended for use in fixed-point and point to point microwave systems. The LNA has a single drain supply, with


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    P35-5117-000-200 37-42GHz 42GHz 462/SM/02703/200 84-1LMI NN12 P35-5117-000-200 PDF

    microwave MARCONI

    Abstract: H40P NN12 P35-5123-000-200 MARCONI power
    Contextual Info: P35-5123-000-200 HEMT MMIC DRIVER AMPLIFIER, 20 - 26GHz Features • • • 23dBm Output Power @ 24GHz 12dB Gain from 20 to 26GHz Small 2 x 1mm Die Size Description The P35-5123-000-200 is a high performance 20-26GHz Gallium Arsenide driver amplifier. When 0.3mm


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    P35-5123-000-200 26GHz 23dBm 24GHz P35-5123-000-200 20-26GHz 20-26GHz. 463/SM/02579/000 microwave MARCONI H40P NN12 MARCONI power PDF

    NN12

    Abstract: P35-5140-000-200 MARCONI power
    Contextual Info: P35-5140-000-200 HEMT MMIC BROADBAND AMPLIFIER, 20 - 40GHz Features • • • • 21dBm Typical Saturated Output Power 20dB Typical Gain 1.72 x 0.76mm Die Size Low Current Typically <200mA @4.5V Description The P35-5140-000-200 is a high performance 20-40GHz Gallium Arsenide amplifier. This product is intended for


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    P35-5140-000-200 40GHz 21dBm 200mA P35-5140-000-200 20-40GHz Ma-00906 462/SM/02820/200 400mA NN12 MARCONI power PDF

    H40P

    Abstract: NN12 P35-5135-000-200
    Contextual Info: P35-5135-000-200 HEMT MMIC 0.5W POWER AMPLIFIER, 28GHz Features • • • Gain; 16dB typical @ 28GHz P-1dB; 27dBm typical @ 28GHz 5dB Typical Noise Figure Description The P35-5135-000-200 is a high performance 28GHz Gallium Arsenide power amplifier, capable of output powers


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    P35-5135-000-200 28GHz 27dBm P35-5135-000-200 28GHz 463/SM/02574/000 H40P NN12 PDF

    Ultrasonic Cleaner schematic

    Abstract: P35-5104-000-301 84-1LMI NN12 P35-5104-000-200
    Contextual Info: Data sheet HEMT MMIC Low Noise Amplifier, 2 - 20GHz Features • Cascode Configuration • 10 dB Gain Typical -200 10 dB Min (-301) • pHEMT technology • AGC control with gate bias The P35-5104-000-200 and P35-5104-000-301 are a high performance low noise 2 - 20GHz Gallium Arsenide


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    20GHz P35-5104-000-200 P35-5104-000-301 20GHz P35-5104-000-200 P35-5104-000-301 462/SM/01503/200 Ultrasonic Cleaner schematic 84-1LMI NN12 PDF

    H40P

    Abstract: NN12 P35-5126-000-200 25-30GHz
    Contextual Info: Data sheet HEMT MMIC Driver Amplifier, 25-30GHz Features • Over 22dBm Output Power @ 28GHz • 10dB Gain from 25 to 30GHz The P35-5126-000-200 is a high performance 25-30GHz Gallium Arsenide driver amplifier. This product is intended for use in fixed-point microwave systems and satellite


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    25-30GHz 22dBm 28GHz 30GHz P35-5126-000-200 P35-5126-000-200 462/SM/02348/200 H40P NN12 25-30GHz PDF

    H40P

    Abstract: NN12 P35-5136-000-200 MARCONI power
    Contextual Info: P35-5136-000-200 HEMT MMIC POWER AMPLIFIER, 28GHz Features • • • Gain; 15dB typical @ 28GHz P-1dB; 29dBm typical @ 28GHz 0.20 µm pHEMT technology Description The P35-5136-000-200 is a high performance 28GHz Gallium Arsenide power amplifier, capable of output powers


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    P35-5136-000-200 28GHz 29dBm P35-5136-000-200 28GHz 463/SM/02574/000 H40P NN12 MARCONI power PDF

    P35-5142-000-200

    Abstract: Ultrasonic cleaner 84-1LMI NN12 Traveling Wave Amplifier
    Contextual Info: Data sheet HEMT MMIC Broadband Amplifier, < 0.5 - 40GHz Features • Cascode Configuration • 12 dB Gain Typical • pHEMT technology The P35-5142-000-200 is a high performance 0.5 - 40GHz Gallium Arsenide monolithic travelling wave broadband amplifier. The broadband amplifier is especially suited for


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    40GHz P35-5142-000-200 40Gb/s OC768/STM-256) P35-5142-000-200 220pF 100nF Ultrasonic cleaner 84-1LMI NN12 Traveling Wave Amplifier PDF

    1 meg ohm variable resistor

    Abstract: 400C LA 4108 sylvania 57 tube subminiature tubes B5137
    Contextual Info: SYLVANIA^ ^ SYLVANIA engineering data service M ECHANICAL DATA QUICK R E F E R E N C E DATA B u l b .T-3 B a s e . E8-10, Subminiature Button Flexible Leads


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    E8-10, 1 meg ohm variable resistor 400C LA 4108 sylvania 57 tube subminiature tubes B5137 PDF

    6as6

    Abstract: sm 4109 5636 TUBE MA 4108 SM 4108 5636 400C subminiature tubes tube 5636
    Contextual Info: SYLVAN IASBp S H IA engineering data service 5636 QUICK R E F E R E N C E DATA M ECHANICAL DATA B u l b . T-3 B a s e . E8-10, Subm iniature B utton F lex ib le L ead s


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    E8-10, 6as6 sm 4109 5636 TUBE MA 4108 SM 4108 5636 400C subminiature tubes tube 5636 PDF

    84-1LMI

    Abstract: NN12 P35-5112-000-200
    Contextual Info: Data sheet HEMT MMIC LNA 8.5 – 10.5GHz Features • 19dB Gain Typical • 1dB Noise Figure The P35-5112-000-200 is an 8.5 – 10.5GHz Gallium Arsenide low noise amplifier. This product is intended for use in a wide range of applications including telecommunications, instrumentation and electronic warfare.


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    P35-5112-000-200 P35-5112-000-200 462/SM/02343/200 84-1LMI NN12 PDF

    bookham 346

    Abstract: H40P NN12 P35-5123-000-200
    Contextual Info: Data sheet HEMT MMIC Driver Amplifier, 20 - 26GHz Features • 23dBm Output Power @ 24GHz • 12dB Gain from 20 to 26GHz The P35-5123-000-200 is a high performance 20-26GHz Gallium Arsenide driver amplifier. With 0.3mm bondwires at the input and output, over 12dB gain from 20-26GHz is


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    26GHz 23dBm 24GHz P35-5123-000-200 20-26GHz 20-26GHz P35-5123-000-200 462/SM/02579/200 bookham 346 H40P NN12 PDF

    Contextual Info: y IN T E G R A T E D C IR C U IT S UC1834 UC2834 UC3834 UNITRODE High Efficiency Linear Regulator FEATURES • M in im u m V N - Vout less than 0.5V at 5A load w ith external pass device • Equally usable fo r e ith e r positive or negative regulator design


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    UC1834 UC2834 UC3834 UC1834 PDF

    5636 TUBE

    Abstract: eel 19 transformer sylvania, transformer subminiature tubes EEL transformer eel - 19 transformer
    Contextual Info: QVIVANIA SY LV A N IA ff^ engineering data service cni e Mb QUICK R E F E R E N C E DATA M ECHANICAL DATA T h e P r e m iu m S u b m i n i a t u r e T ype 5916 is a sharp cutoff, dual control pentode intended for use as a gated am plifier or m ixer at frequencies up to 400


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    E8-10, 5636 TUBE eel 19 transformer sylvania, transformer subminiature tubes EEL transformer eel - 19 transformer PDF

    transistor smd bc rn

    Abstract: SMD transistor BC RN VEI 005
    Contextual Info: SIEMENS Programmable Single-/Dual-/Triple- Tone Gong SAE 800 Preliminary Data Bipolar 1C Features • • • • • • • • • Supply voltage range 2.8 V to 18 V Few external components no electrolytic capacitor 1 tone, 2 tones, 3 tones programmable


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    Q67000-A8339 S800M3Ã Q67000-A8340 25max 35x45' fl23SbD5 transistor smd bc rn SMD transistor BC RN VEI 005 PDF

    Raytheon Company

    Abstract: Scans-0017557 6AH6wa EEL 28
    Contextual Info: TECHNICAL INFORMATION RAYTHEON RELIABLE PENTODE TYPE 1 Ç x-C-e-L U £ J - 6AH6WA The 6AH6WA is a Heater• cathode type« high transconductance« sharp c u t-o ff pentode of miniature construction designed for use as a wide band or IF amplifier. It w ill maintain its emission and


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    PDF

    Contextual Info: 1Ö4432B 00 012 75 505 C alodìC _ Precision Adjustable Shunt Reference CORPORATION 71431 FEATURES DESCRIPTION • • • • • • The TL431 is an adjustable shunt regulator designed to act as an open-loop error amplifier with a 2.5V temperature compensated reference. Its highly accurate 1% bandgap


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    4432B TL431 30ppm/Â 150mA OT-89 O-226A) 1S44322 PDF