SH MARKING DIODE Search Results

MARKING ta y sod-323

Abstract: 1N914BWS 1N4148WS
Contextual Info: PRE LIM INAR Y DATA SH EET 200mW SOD-323 SURFACE MOUNT DEVICE MARKING CODE: Device Type Device Marking 1N4148WS S1 1N4448WS S2 1N914BWS S3 Small Outline Flat Lead Plastic Package Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG TA = 25°C unless otherwise noted

ERB83-004

Abstract: diode ft 344
Contextual Info: E R 8 B 3 - 0 0 4 1 7 A I : Outl i ne Drawings SCHOTTKY BARRIER DIODE • 4 $ ^ : Features • 1&VF : Marking Low V F #7-3-1' : SH Super high speed switching. • - f ls - ir - Color code : ttflil-JC S& fSSRtt w High reliability by planer design, Abridged type name

smd code marking 3A sot23

Abstract: marking SH SOT23 d96 smd SMD MARKING CODE sh SMD D62 SMD MARKING ps 6263S D96 SOT23 MO marking code sot23 da5. smd
Contextual Info: SMD LOWCurrent Schottky Diodes SOT-23 Case NEW! TYPE NO. CONFIGURATION v nnM VOLTS MAX (mA) MAX CM PD 6263 CM PD 6263A C M PD 6263C C M PD 6263S SIN GLE DUAL, C O M M O N A NO D E DUAL, C O M M O N CATHODE DUAL, IN SE R IE S 70 70 70 70 15 15 15 15 v ,<

marking SH SOT23

Abstract: smd code marking pd SMD MARKING CODE sh smd code marking LE sot23 MARKING MON sot-23 d96 smd sot 23 marking code CD MO marking code sot23 da5. smd marking pd
Contextual Info: SMD Low Current Sdiottky Diodes SOT-23 Case NEW! T Y P E MO. CONFIGURATION V rrm VOLTS MAX >f (mA) MAX C M PD 6263 C M PD 6263A CM PD 6 26 3C CM PD 626 3S SIN G LE DUAL, C O M M O N A NO D E DUAL, C O M M O N CATHODE DUAL. IN S E R IE S 70 70 70 70 15 15

ic 4016

Abstract: 1N3206 DIODE PK IN 4001 MIL-STD-750 METHOD 2036 1n4373 MIL-STD-750 METHOD 2036 CONDITION E MIL-S-19491 D253S IC 4011 details
Contextual Info: MIL SPECS 0000155 NOTICE OF VALIDATION 000253*4 T | INCH-POUND MIL-S-19500/195D NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, MICRO-MINIATURE, SWITCHING TYPE 1N3206 Military specification MIL-S-19500/195D, dated 6 August

1SS154

Contextual Info: TO SHIBA 1SS154 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 S S 1 54 U H F-S BAND M IX E R / DETECTOR APPLICATIONS U nit in mm +0.5 2.5 - 0.3 Small Package. M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC RATING 6 UNIT V Reverse Voltage

Contextual Info: 1SS154 TO SH IB A TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 • w êêf w êêf m 5 4 wm r m UHF-S BAND MIXER /DETECTOR APPLICATIONS U n it in mm ELECTRICAL CHARACTERISTICS Ta =25°C SYMBOL Reverse Current Forward Voltage Ir Forward Voltage

1SV237

Contextual Info: TOSHIBA_ 1SV237 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1SV 237 Weight : 0.013g ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC Reverse Voltage Reverse Current Forward Voltage Total Capacitance Series Resistance

1SV277

Contextual Info: 1SV277 TO SHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 7 7 Unit in mm VCO FOR UHF BAND RADIO • High Capacitance Ratio : C iy /C 4 Y = 2.3 Typ. • Low Series Resistance : rs = 0.420 (Typ.) • Small Package 0± 0.05 M A X IM U M RATINGS (Ta = 25°C)

1SV305

Contextual Info: 1SV305 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 305 VCO FOR VHF BAND RADIO • • • Small Package High Capacitance Ratio Low Series Resistance : C iv /C 4v = 3.0 Typ. : rs = 0.270 (Typ.) MAXIMUM RATINGS (Ta = 25°C)

1SV308

Abstract: HP4291A
Contextual Info: 1SV308 TO SH IBA TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1SV 308 VHF TUNER BAND SWITCH APPLICATIONS • • • Small Package Low Series Resistance Small Total Capacitance : rs = l.lO Typ. : Or = 0.3pF (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

MARKING L toshiba USC

Abstract: 1SV304
Contextual Info: 1SV304 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1S V 304 VCO FOR VHF BAND RADIO • • • Small Package High Capacitance Ratio Low Series Resistance : C iv /C 4v = 3.0 Typ. : rs = 0.270 (Typ.) MAXIMUM RATINGS (Ta = 25°C)

diode bridge toshiba

Abstract: 1SV252 aml 10 series
Contextual Info: 1SV252 TO SH IBA 1 SV2 5 2 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE Unit in mm VH F-U HF BAND RF ATTENUATOR APPLICATIONS MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL Vr If

fr2t diode

Abstract: VRRM1000 toshiba diode do-41
Contextual Info: TO SH IBA TFR2N,TFR2T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR2N, TFR2T Unit in mm STROBO FLASHER APPLICATIONS. FAST RECOVERY • • • Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time (AV) = 0-5A V r r m = 1000, 1500V

1SV276

Contextual Info: 1SV276 TO SHIBA 1 SV2 7 6 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : C iy /C 4 Y = 2.0 Typ. Low Series Resistance : rs = 0.220 (Typ.) Small Package 0± 0.05 M A X IM U M RATINGS (Ta = 25°C)

1SV280

Contextual Info: TO SH IBA 1SV280 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE 1 SV280 High Capacitance Ratio : C2v /C;lov = 2.4 TYP. Low Series Resistance : rs = 0.440 (TYP.) Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)

1SS364

Abstract: marking LL
Contextual Info: 1SS364 TO SH IBA 1 SS364 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm VHF TUNER BAND SWITCH APPLICATIONS • Small Package. • Small Total Capacitance : Cx = 1.2pF Max. • Low Series Resistance : rs = 0.60 (Typ.) MAXIMUM RATINGS (Ta = 25°C)

1SV285

Contextual Info: TO SHIBA 1SV285 1 SV2 8 5 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C iy /C 4Y = 2.3 TYP. • Low Series Resistance : rs = 0.420 (TYP.) • Useful for Small Size Tuner.

1SV28

Contextual Info: TOSHIBA 1SV285 1 SV2 8 5 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C iy /C 4y = 2.3 TYP. • Low Series Resistance : rs = 0.420 (TYP.) • Useful for Small Size Tuner.

1SV279

Contextual Info: 1SV279 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 279 VCO FOR V/UHF BAND RADIO • • • High Capacitance Ratio : C2v /C;lov = 2.5 TYP. Low Series Resistance : rs = 0.20 (TYP.) Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)

1SV284

Contextual Info: TOSHIBA 1SV284 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 8 4 Unit in mm VCO FOR V /U H F BAND RADIO • High Capacitance Ratio : C iy /C 4Y = 2.0 TYP. • Low Series Resistance : rs = 0.220 (TYP.) • Useful for Small Size Tuner.

1SV239

Abstract: C10V
Contextual Info: 1SV239 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 239 VCO FOR UHF RADIO • • Ultra Low Series Resistance : rs = 0.440 Typ. Useful for Small Size Set MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature

1SS369

Contextual Info: TO SHIBA 1SS369 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS369 LO W VOLTAGE HIGH SPEED SWITCHING U nit in mm • Small Package • Low Forward Voltage : V f 3 —0.54V (TYP.) • Low Reverse Current : Ir = 5/¿A (MAX.) 0.8 ±0.1 1.3 ± 0.1

1SV245

Abstract: C25V
Contextual Info: 1SV245 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 24 5 UHF SHF TUNING • High Capacitance Ratio : C2V/C25V = 5.7 Typ. • Low Series Resistance : rs = 1.20 (Typ.) • Excellent C - V Characteristics, and Small Tracking Error.