Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SGSP352 Search Results

    SGSP352 Datasheets (1)

    Others
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SGSP352
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 119.99KB 1

    SGSP352 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SGSP352

    Contextual Info: SGSP352 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)80 V(BR)GSS (V) I(D) Max. (A)5.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC)


    Original
    sgsp352 PDF

    D100E

    Abstract: ic uc3842 BUV48 SE sgsd00031 SGSD00039 uc3842 application 600V BU508 BU810
    Contextual Info: / S T SGS-THOMSON [M «m i g1TIMlM(gS APPLICATION NOTE HIGH VOLTAGE TRANSISTORS WITH POWER MOS EMITTER SWITCHING INTRODUCTION This paper summarizes the results of an investi­ gation carried out on power devices with both MOS and BIPOLAR parts working together in the same


    OCR Scan
    sgsp321sgsp352buv48bu508a+9sgsd00035sgsd00039sgsd00031bu810d100eic uc3842buv48 seuc3842 application 600vbu508 PDF

    x1rv

    Abstract: SGSP151 SGSP252 sgsp251 P252 C SGSP351 FT04c
    Contextual Info: S G S-THOMSON 07E D | 712^237 001703 1 3 73C 17 3 28 o 7 7 3 *1 -0 7 S A L V N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.


    OCR Scan
    sgspi51/p152sgsp251/p252sgsp351/p352ot-82+9o-220sgsp151sgsp251sgsp351sgsp152sgsp252x1rvp252 cft04c PDF

    u810 diode

    Abstract: diode u810 flyback uc3842 power supply BUV48 SE u810 sgsd00031 SGSP321 BU508 BU810
    Contextual Info: SGS-THOMSON 5 7 ,. APPLICATION NOTE HIGH VOLTAGE TRANSISTORS WITH POWER MOS EMITTER SWITCHING INTRODUCTION This paper summarizes the results of an investi­ gation carried out on power devices with both MOS and BIPOLAR parts working together in the same circuit. The “ emitter drive” configuration was con­


    OCR Scan
    sgsp321sgsp352buv48bu508a+10sgsd00035sgsd00039sgsd00031bu810u810 diodediode u810flyback uc3842 power supplybuv48 seu810bu508 PDF

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


    OCR Scan
    bbs3131blu521n321byw56+131n321ablv971n322txd10k40txd10k60bt1690bt8081n5004txd10h60mp8706txc10k40bstc1026bt13g PDF