SGS-THOMSON MOSFET Search Results

Contextual Info: rz7 SGS-THOMSON ^ 7 #. MISfSmiraMO ! TECHNICAL NOTE IMPROVED POWER MOSFET RUGGEDNESS IN UNCLAMPED INDUCTIVE SWITCHING INTRODUCTION Recent development work by SGS-Thomson has resulted in the production of POWER MOSFETs with improved performance in terms of unclamped

Contextual Info: SGS-THOMSON TSD2903 m RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specitications tor a product which is currently under development by SGS-THOMSON. The design criteria and specitications ot this item could change prior to

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

LI 20 AB

Abstract: TSD2904 SGS 7301 M113
Contextual Info: r=7 SGS-THOMSON TSD2904 RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

Contextual Info: SGS-THOMSON sUICT»M SS TSD2922 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

TSD2903

Abstract: TSD2902 25x2mA
Contextual Info: SGS-THOMSON sUICT»M SS TSD2903 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

ISO STANDARDS SHEET METAL THINNING

Abstract: TRANSISTOR SUBSTITUTION 1993 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR SGS-Thomson zener smd eurotherm ST marking code crolles eurotherm 451 ALL TYPE IC DATA AND manual substitution BOOK IEC 68-2-27 spectrometer U.S.A Eurotherm Controls
Contextual Info: SURE 7 Semiconductor Users Reliability Evaluation Quality and Reliability Program Published by SGS-THOMSON Quality and Reliability Management “YOU HAVE MY WORD ON IT” As I noted in SURE 6, service is the number one strategic priority at SGS-THOMSON. We consider service as a

Contextual Info: rz 7 SGS-THOMSON ^>7# s T S D 2921 RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCTDEVELOPMENTDATA SHEET This data sheet contains the design criteria and target specitications tor a product which is currently under development by SGS-THOMSON. The design criteria and specitications ot this item could change prior to

Contextual Info: SGS-THOMSON S i. M iM TSD2922 iy RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

Contextual Info: r= 7 SGS-THOMSON ^ 7 TSD2902 [j}fflO Mi[LI gTrœROD©i RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

TSD2921

Contextual Info: rz T SGS-THOMSON ^ 7# HD »iLECÊ¥ Q !D(gI TSD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specitications tor a product which is currently under development by SGS-THOMSON. The design criteria and specitications ot this item could change prior to

Contextual Info: r=7 ^ 7 SGS-THOMSON TSD2900 [j}fflO Mi[LI gTrœROD©i RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

mosfet pal 007 pioneer

Abstract: PAL 007 pioneer mosfet valeo alternator bosch relay equivalent 0 280 230 005 Thomson-CSF* relay bosch alternator Pioneer MOSFET 007 BOSCH 281 005 019 NIPPONDENSO CO LTD bosch 0 281 002 667
Contextual Info: [sa] Cover 7/2/97 3:54 PM Page 1 SGS-THOMSON MICROELECTRONICS ® 1996 A NNUAL R EPORT ANNUAL REPORT [sa] Narr. IFC-17 7/3/97 1:53 PM Page IFC2 > SGS-THOMSON Microelectronics N.V. is a global independent semiconductor company that produces a broad range of semiconductor integrated circuits ICs and discrete devices.

ESM4045DF

Abstract: 258 st FR 9120 ESM4045DV
Contextual Info: 3QE D m 7^5^37 - Q03QM5b 2 S G S-THOMSON SGS-THOMSON - cdM4045DF ESM4045DV T '3 > 3 '3 > 5 NPN DARLINGTON POWER MODULE • HIGH CURRENT POWER B IP O U R MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED

uis test

Abstract: BUZ45 BUZ21
Contextual Info: F=7 SCS-THOMSON “ / # » [¡» » Ë lL Iiê ïE M O Ê S TECHNICAL NOTE IMPROVED POWER MOSFET RUGGEDNESS IN UNCLAMPED INDUCTIVE SWITCHING INTRODUCTION Recent development work by SGS-Thomson has resulted in the production of POWER MOSFETs with improved performance in terms of unclamped

STF8045AV

Contextual Info: 3DE D • 7^237 QG3D512 ô SGS-THOMSON STF8045AF STF8045AV S G S-THOMSON NPN DARLINGTON POWER MODULE EASY TO DRIVE TECHNOLOGY ETD ■ HIGH CURRENT POWER BIPOLAR . MODULE VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ISOLATED CASE (2500V RMS)

diode f40c

Abstract: 3845a ESM6045DV
Contextual Info: 3DE m D 7«ÌSRS37 GD3GM74 4 • ESM6045DF ESM6045DV SGS-THOMSON [*[im[I gTI[iMQ(gS S G S-THOMSON ' NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE

ESM2030DF

Abstract: ESM2030DV BYT11 S125 ESM2 T100C SGS
Contextual Info: 3QE D m 7 cJ5ciS37 QQ3G42b 4 SGS-THOMSON HLKgTMKS ESM2030DF ESM2030DV S G s-thomson 1 *3 3 -3 5 NPN DARLINGTON POWER MODULE l • HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rm JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE

transistor c1237

Abstract: TSD250N05V
Contextual Info: 3DE » • 7 cì 2 c1237 Q03QLi02 1 , - SGS-THOMSON z u s g TSD250N05F TSD250N05V IQJOITGMOtgS n - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE S-THOMSON TENTATIVE DATA TYPE TSD250N05F/V V dss RDS on Id 50 V 0.004 n 250

FR 9120

Abstract: ESM3030DV
Contextual Info: 3QE e ? D • 7^5^537 QG3Q432 T ■ ESM3030DF ESM3030DV SGS-THOMSON itLHOTO «! S G S-THOMSON ' NPN DARLINGTON POWER MODULE ■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW Rth JUNCTION CASE « SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE

STF6045DV

Abstract: BD405 transistor b 1185 BD 149 transistor
Contextual Info: 3QE D £ v • 7^237 SGS-THOMSON iHiOTMKS DG30SDb B T -33^ S STF6045DF STF6045DV S G S-THOMSON NPN DARLINGTON POWER MODULE ■ ■ ■ ■ . . . . EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL

T-33-35

Abstract: STF6045
Contextual Info: BQE D H 7 ^ 2 3 7 0Q3DSDD 1 3 SGS-THOMSON STF6045AF _STF6045AV HLJÛTMOSOÛS S G S-THOMSON NPN DARLINGTON POWER MODULE EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS . ISOLATED CASE (2500V RMS)

BUF460AF

Abstract: SC04840 BUF460AV ETD 41 035 pin diagram of ic 1496 JF460AF
Contextual Info: 3DE D • 7=12^237 QQ3Q35b =1 ■ SGS-THOMSON s 6 s-thomson JF460AF ^ 7# OSOieiamiCTR »!« BUF460AV r - 3 3 '1 s NPN TRANSISTOR POWER MODULE . . . ■ EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL

MOSFET Termination Structure

Contextual Info: rz7 SGS-THOMSON ^ 7 Mm [ j ^ 0 [ K ] Q i [ L [ l © i r [ Ë ] W 0© S A P P L IC A T IO N N O T E HIGH DENSITY POWER MOSFETS Fig. 1 - SGS POWER MOSFET structure INTRODUCTION POWER MOSFET-transistor are fabricated using VLSI technology. A simple chip contains thousands