SGL5N150UF. Search Results

SGL5N150UF. Datasheets (3)

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Fairchild Semiconductor

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SGL5N150UF	Fairchild Semiconductor	IGBT	Original	PDF	297.28KB	6
SGL5N150UF	Fairchild Semiconductor	Discrete, High Performance IGBT	Original	PDF	296.11KB	6
SGL5N150UFTU	Fairchild Semiconductor	Discrete, High Performance IGBT	Original	PDF	297.28KB	6

SGL5N150UF. Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IGBT cross-reference Abstract: AN9011 Contextual Info: IGBT SGL5N150UF General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. SGL5N150UF is designed for the Switching Power Supply applications. • High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A	Original	SGL5N150UF SGL5N150UF O-264 SGL5N150UFTU O-264 AN-9011: AN-9011 SGL5N150UF) IGBT cross-reference AN9011	PDF

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IGBT cross-reference

Abstract: AN9011
Contextual Info: IGBT SGL5N150UF General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. SGL5N150UF is designed for the Switching Power Supply applications. • High Speed Switching • Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A

Original

SGL5N150UF SGL5N150UF O-264 SGL5N150UFTU O-264 AN-9011: AN-9011 SGL5N150UF) IGBT cross-reference AN9011

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