Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SG45N12T Search Results

    SG45N12T Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SG45N12T
    		Sirectifier Discrete IGBTs Original PDF 106.48KB 2

    SG45N12T Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Discrete IGBTS

    Abstract: SG45N12T RG1425
    Contextual Info: SG45N12T Discrete IGBTs Dimensions TO-247AD E C G C TAB G=Gate, C=Collector, E=Emitter,TAB=Collector SG45N12T Symbol Test Conditions o o VCES VCGR TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; VGES VGEM Continuous Transient TC=25oC; limited by leads TC=90oC


    Original     		SG45N12T O-247AD 150oC; 31MHz 125oC Discrete IGBTS SG45N12T RG1425 PDF

    Discrete IGBTS

    Abstract: tab ic SG45N12T
    Contextual Info: SG45N12T Discrete IGBTs Dimensions TO-247AD E C G C TAB G=Gate, C=Collector, E=Emitter,TAB=Collector SG45N12T Symbol Test Conditions o o VCES VCGR TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; VGES VGEM Continuous Transient IC25 IC90 ICM TC=25oC; limited by leads


    Original     		SG45N12T O-247AD 150oC; 125oC Discrete IGBTS tab ic SG45N12T PDF

    TO247AD

    Abstract: TO-247ad SOT-227 Package TO247-AD Discrete IGBTS SG12N06DT SG23N06DT SG23N06T, SG23N06DT SG12N06DP SG12N06P
    Contextual Info: Isolated Gate Bipolar Transistors IGBTs Discrete IGBTs Äèñêðåòíûå IGBT Òype VCES V IC25 Electrical Characteristics IC90 VCEsat @TC=25°C @TC=25°C @25°C typ. EOFF @125°C typ. RthJC Ñõåìà Package Style A A V 7 1.5 0.6 2.30 1 TO-220AB mJ


    Original     		O-220AB SG7N06P SG7N06DP SG12N06P SG12N06DP SG12N06T O-247AD TO247AD TO-247ad SOT-227 Package TO247-AD Discrete IGBTS SG12N06DT SG23N06DT SG23N06T, SG23N06DT SG12N06DP SG12N06P PDF