SG-45 DIODE Search Results

STPS3045CM

Contextual Info: f i z z SG S -TH O M SO N ^ 7 # *l m [l T ri!a ® « S STPS3045CM _ POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS 2x15 A If (a v V rrm 45 V Vf 0.57 V FEATURES AND BENEFITS • ■ . ■ ■ VERY SMALL CONDUCTION LOSSES

Contextual Info: r z 7 SG S-THO M SO N ^7# MOœ iLEOTMÛS STPS3045G POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I f a v 30 A V rrm 45 V Vf 0.63 V 1 <4 3 —►(—4 FEATURES AND BENEFITS • ■ . ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH DISSIPATION MINIATURE PACKAGE

Contextual Info: £ = T SG S-T H O M SO N HIGH SIDE SMART POWER SOLID STATE RELAY TARGET DATA TYPE V dss RD S on (OUT Vcc VN05H SP 45 V 0.18 £2 12 A 36 V • OUTPUT CURRENT (CONTINUOUS): 6A @ T c = 2 5 ° C ■ 5V LOGIC LEVEL COMPATIBLE INPUT . THERMAL SHUT-DOWN . UNDER VOLTAGE SHUT-DOWN

SG 21 DIODE SMD

Abstract: diode sg 36 SQ2014 14104BEA 14103BEA SG2023
Contextual Info: SG2000 SERIES 5 IL IC D N GENERAL HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS L IN E A R IN T E G R A T E D C IR C U IT S DESCRIPTION FEA TU RES The SG 2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in

diode sg 36

Abstract: diode 400v 2A ultrafast STTB306B
Contextual Info: f Z T SGS-THOMSON Ä T# RfflD g^(ô ILI ¥^@R3D(Si STTB306B(-TR) TURBOSWITCH " B " . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If(av) 3A V rrm 600 V V f (max) 1.3V trr (typ) 45 ns PRELIMINARY DATASHEET FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS :

diode sg 45

Abstract: STTB506B transistor 600v 500a SG-45 diode fast recovery diode 400v 5A power DIODES diode sg 5a 5a son
Contextual Info: f Z T SGS-THOMSON Ä T# RfflD g^(ô ILI ¥^@R3D(Si STTB506B(-TR) TURBOSWITCH " B " . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If(av) 5A V rrm 600 V 1.3V V f (max) tr r (typ) PRELIMINARY DATASHEET 45 ns FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS:

Contextual Info: BYT260PIV-400 BYT261PIV-400 SGS-THOMSON RfflDOœiLiOir^^QilDSi FAST RECOVERY RECTIFIER DIODES FEATURES • ■ ■ ■ VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE: Insulating voltage = 2500 V r m s

smd diode marking sG

Abstract: SMD diode sg 03 SG-45 diode
Contextual Info: rz 7 Ä 7# SG S-T H O M SO N RfflDOœmLiOirœiDSi STPR1020CG ULTRA FAST RECOVERY RECTIFIER DIODES FEATURES . SUITED FOR SMPS • LOW LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIME ■ HIGH SURGE CURRENT CAPABILITY ■ HIGH AVALANCHE ENERGY CAPABILITY . SMD PACKAGE

Contextual Info: C T S G S -T H O M S O N ^ 7# . HDlgœilLIgTOOIfSlDgi BAT 45 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE RATINGS limiting values Repetitive Peak Reverse Voltage

BYT230PIV400

Abstract: Diodes a2 BYT230PIV-400
Contextual Info: BYT230PIV-400 BYT231PIV-400 SGS-THOMSON RfflDOœiLiOir^^QilDSi FAST RECOVERY RECTIFIER DIODES FEATURES • ■ ■ ■ VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE: Insulating voltage = 2500 V r m s

diode sg 42

Contextual Info: £ ÿ j SGS-THOMSON DœSELIOTfô ! STTB3006P I TURBOSWITCH ™ ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f (a v ) 30A V rrm 600V (typ) 60ns (max) 1.3V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­

thyristor k 202 russian

Abstract: russian diode kp20a 600v kp20a ZP20A optothyristor KP300A KP200A T143-630 SCR zp5a
Contextual Info: CONTENT RECTIFIER DIODES THREADED STUD DESIGN RUSSIAN PURPOSE 2 PRESS PACK RECTIFIER DIODES (RUSSIAN PURPOSE) 2 AVALANCHE RECTIFIER DIODES THREADED STUD DESIGN (RUSSIAN PURPOSE) 3 AVALANCHE RECTIFIER DIODES PRESS PACK (RUSSIAN PURPOSE) 3 FAST RECOVERY DIODES THREADED STUD DESIGN (RUSSIAN PURPOSE)

SBE001

Abstract: SB20015M SS2003M SS3003CH ec2d02b SB007-W03C SB10015M SBS004M ss200 SS10015M
Contextual Info: Schottky Barrier Diodes Shortform Table Surfacemount Type Package Series CONTENTS •Packages ■Quick selection guide ■Recommendation circuit diagram ■Lineup according to packages ・ECSP1006-2 ・ECSP1008-2 ・ECSP1608-4 ・SSFP ・SCH6 ・SMCP ・MCP

Contextual Info: S G S -ÏH O M S O N KÆ0ra@[EL[iûre ^0 i BZV47C5V1 / 200 2W ZENER DIODES FEATURES • VOLTAGE RANGE :5 .1 V to 200 V ■ HERMETICALLY SEALED P LA S TIC C ASE: F126 PACKAGE ■ HIGH SURGE C A P A B ILITY : 55 W 10 m s . DESCRIPTION 2 W silicon Zener diodes.

diode sg 46

Abstract: SG DIODE MARKING diode sg 52 IGBT 2000V .50A
Contextual Info: £ ÿ j SG S-TH O M SO N n0 œ i l L I 0 ra [iïlBCi S T T A 5 1 2 D /F TURB O SW ITC H ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 5A V rrm 1200V (typ) 45ns (max) 2.0V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS

Sony ICX285

Abstract: diode sg 52 icx285 CXD3607R SD10 diode sg 45 diode sg 38
Contextual Info: CXD3607R Timing Generator for Progressive Scan CCD Image Sensor Preliminary Description The CXD3607R is a timing generator IC which generates the timing pulses required by Progressive Scan CCD image sensors as well as signal processing circuits. Features • Base oscillation frequency 57.3MHz

diode sg 44

Abstract: Sony ICX285 CXD3607R
Contextual Info: CXD3607R Timing Generator for Progressive Scan CCD Image Sensor Description The CXD3607R is a timing generator IC which generates the timing pulses required by Progressive Scan CCD image sensors as well as signal processing circuits. Features • Base oscillation frequency 57.3MHz

Contextual Info: Æ T SGS-THOMSON n0MilU10TI3 [fflnei STTB506B -TR TURBOSWITCH ”B” . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f (a v ) 5A V rrm 600 V Vf trr (max) 1.3 V (typ) 45 ns P R ELIM IN ARY DATASHEET FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS:

Contextual Info: Æ T SGS-THOMSON noœiiuioTi^oifflnei STTB306B -TR TURBOSWITCH ”B” . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f (a v ) 3A V rrm 600 V Vf trr (max) 1.3 V (typ) 45 ns P R ELIM IN ARY DATASHEET FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS:

Contextual Info: £ £ 7 SG S -TH O M S O N u l n 200 i a - u l n 2002A ULN2003A-ULN2004A SEVEN DARLINGTON ARRAYS . SEVEN DARLINGTONS PER PACKAGE . OUTPUT CURRENT 500mA PER DRIVER 600mA PEAK • OUTPUT VOLTAGE 50V . INTEGRAL SUPPRESSION DIODES FOR IN­ DUCTIVE LOADS . OUTPUTS CAN BE PARALLELED FOR

BAS 70-04

Contextual Info: C T SGS-THOMSON ^ 7 # . HD»HLI TO s lfSlD(gi BAR 18 BAS 70-04 06 SMALL SIGNAL SCHOTTKY DIODES N,C, A1 DESCRIPTION Low turn-on and high breakdown voltage diodes intended for ultrafast switching and UHF detectors in hybrid micro circuits. 'A 2 BAS 70-06 BAS 70-05

marking DA1

Abstract: DA108S1
Contextual Info: r Z T SGS-THOMSON DA108S1 m‘7M Mie«lUB8raS>HC8_DA112S1 Application Specific Discretes A .S .D . DIODE ARRAY APPLICATION Protection of logic side ot ISDNS-interface. Protectionot I/O lines ot microcontroller. Signal conditioning. ♦ S08 FUNCTIONAL DIAGRAM : DA108S1

DIACS

Abstract: Triacs
Contextual Info: rZ 7 SG S -THOMSON ^ 7# GENERAL PURPOSE & INDUSTRIAL MM ôm[l(STOM(£S MEDIUM POWER THYRISTORS & TRIACS < 100 A TRIGGER DIODES (DIACS Breakover voltage Breakover voltage symmetry Breakover current A V between 0 and 10 mA min. (V) Package Type mio nom max

SEMIKRON SKIIP 20 NAB 12 T 17

Abstract: semikron skiip 21 nab 12 T 31 semikron skiip 21 nab 063 T 40 Semikron skiip 31 nab 12 skiip 10 nab 063 T 10 Semikron skiip 31 nab 12 T 10 SKiiP 31 NAB 12 T 16 semikron skiip nab 06 semikron skiip 32 nab 12 semikron skiip 32 nab 12 t 7
Contextual Info: se MIKROn SKiiP SG NAB GB Absolute Maximum Ratings Symbol C onditions 1 Values Units T heatsink —25 I SG C tp < 1 ms; T heatsink —25 I SG C T heatsink —25 I SG C tp < 1 ms; T heatsink —25 I SG C 6GG ± 2G S6 I 25 72 I 5G 57 I SS 114 I 76 V V A A A