SFE 5,5 MA Search Results

sf 818 d

Abstract: NPN 337 SU 179 sf 819 d SF 127 Funkamateur SMD NF sf 118 d sd 339 NF 847 G
Contextual Info: IC, ICsat [mA, A ] 600 -100 -100 -100 -100 100 100 100 100 100 100 -100 -100 -100 100 100 100 -100 -100 -100 (1) (-1) (1) (-1) (1) (-1) (3) (1,5) (-1,5) (1,5) (-1,5) (1,5) (-1,5) * [MHz] ≥ 250 90 90 90 90 ≥ 300 ≥ 300 145 145 161 175 350 350 350 185

TBA120S

Abstract: fz 79 470 TBA120 TBA 470 tba 120 TBA120AS e fzr Keramikfilter SFE murata filter SFE 10.7 120AS
Contextual Info: FM-ZF-Verstärker mit Demodulator TBA 120 S TBA 120 AS Bipolare Schaltung S ym m etrischer, achtstu fig er V erstärker m it sym m etrischem Koinzidenzdem odulator zur Verstärkung, Begrenzung und Dem odulation von frequenzm odulierten Signalen, beson­ ders g ee ig n e t für den Ton-ZF-Teil in FS-G eräten und als FM -ZF -V erstärker in R u ndfunkge­

BF259

Abstract: bf 233 BF257 BF 235 BF258 BF258-BF259 bf 258 bf 236 A1233
Contextual Info: Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: Video-Endstufen in Schwarz-Weiß- und Farb-FS-Empfängern. Schaltungen mit hoher Betriebsspannung Applications: Video power stages in black and white and colour TV receivers.

BFQ51C

Abstract: marking code ci SOT173 BFP90A SOT-173 MARKING 0 SOT173
Contextual Info: N AMER PHILIPS/DISCRETE BSE D • ^53^31 GQ17Û73 1 ■ A BFQ51C T -3 I-I7 P-N-P 2 GHz WIDEBAND TRANSISTOR P-N-P transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope. It is primarily intended for use in u.h.f. and microwave amplifiers such as aerial amplifiers, radar systems, oscilloscopes,

TFK u 269

Abstract: BF457 BF459 IC 41 BF bo 913 bf458 din 125a bf 459
Contextual Info: f f i Silicon NPN Epitaxial Planar Transistors Anwendung: Video-Endstufen in Schwarz-W eiß- und Farb-FS-Geräten Application: Video output stages in b la ck and white and co lo u r TV receivers Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

TRANSISTOR 132-gd

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 75 GD 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Kollektor-Em itter-Sperrspannung c ollector-em itter voltage o O Is«Il O I- Kollektor-D auergleichstrom

Contextual Info: N AMER P H IL I P S / D I S C R E T E BSE D Jl ftSHlHl QQ17S73 1 • BFQ51C T - 3 /- / 7 P-N-P 2 GHz WIDEBAND TRANSISTOR P-N-P transistor in a sub-miniature H E R M E T IC A L L Y S E A L E D micro-stripline envelope. It is primarily intended for use in u.h.f. and microwave amplifiers such as aerial amplifiers, radar systems, oscilloscopes,

telefunken ra 200 amplifier

Abstract: UBA 4001 BI474 EL3010 tube el 36 telefunken ra 100 telefunken ra 200 2X40 Telefunken tubes A-0601
Contextual Info: Netzröhre für GW-Heizung S Ä EL 3010 T E L E F UN K E N DC-AC-Heating L e is t u n g s p e n t o d e indirectly heated connected in parallel P o w e r p e n to d e Vorläufige technische Daten • Tentative data Z u v e rlä ssig k e it R e lia b ility

BFT25

Abstract: bft25 transistor
Contextual Info: N AMER P H I L I P S / D I S C R E T E ^53^31 o o ia is i b 'l BSE D J BFT25 T - 3 I -|7 N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope, primarily intended for use in u.h.f. low power amplifiers in thick and thin-film circuits, such as in pocket phones, paging systems, etc. The transistor features

SFE 5.5 MC

Contextual Info: T e m ic U2860B-B Semiconductors Dual-Channel FM Sound Demodulator for TV Systems Description The U2860B is a dual-channel FM sound demodulator realized with TEMIC Semiconductors’ advanced bipolar process. All TV FM standards, from 4.5 up to 6.5 MHz standard M, B/G, I, D/K can be processed with high

PNA7518

Contextual Info: DEVELOPMENT DATA PNA7518 T h is d ata sheet co n ta in s advance in fo rm a tio n and s p e c ific a tio n s are su b je ct to change w it h o u t n o tic e . 8-BIT MULTIPLYING DAC G E N E R A L D E S C R IP T IO N T he P N A 7518 is a NMOS 8 -b it m u ltip ly in g digital-to-analogue co n ve rte r D A C designed fo r video

Contextual Info: s e MIKROn Absolute Maximum Ratings Values Symbol Conditions 1 Units VcES VcGR lc IcM V ges = 20 Toase = 25/85 °C Tease = 25/85 °C; tp = 1 ms P to t per R 1200 1200 1 5 0 /1 0 0 300 / 200 ± 20 700 -4 0 . + 150 125) 2 500 Class F 40/125/56 g e I G B T , T o as e

diode 22 16Q

Contextual Info: APT10M25BVFR • R A dvan ced W /Æ PO W ER Te c h n o l o g y ' io o v POWER MOS V‘ 75a 0 .0 25Q FREDFET Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect,

Contextual Info: • R A dvanced W .\A APT10086B VR pow er Te c h n o lo g y " 1000v i 3a 0.860Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

BFG51

Contextual Info: N AMER PHILIPS/DISCRETE bb53l31 Q017b7i 0 BFG51 H5E D J T - S I ~ I S~ P-N-P 2 GHz WIDEBAND TRANSISTOR •• » P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in CATV and M A TV systems, up to 2 GHz.

Contextual Info: eu D E C T e c h n is c h e In fo r m a tio n / T e c h n ic a l In fo r m a tio n !Ü £ £ £ . F Z 1 8 0 0 R 1 7 K F 6 B 2 H fv b vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties

LVJ DIODE

Contextual Info: e u DEC Technische Information / Technical Information !Ü£££. FZ 1200 R 17 KF6 B2 Hfvb vorläufige Daten preliminary data Höchstzulässige Werte E le k t r is c h e E ig e n s c h a f t e n / / Maximum rated values E le c t r ic a l p r o p e r t ie s

E3226

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 G D 60 DLC E 3226 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Kollektor-Em itter-Sperrspannung collector-em itter voltage Kollektor-Dauergleichstrom

transistor A 562

Contextual Info: Technische Information/Technical Information IGBT-Module IGBT-Modules BSM 10 GD 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Kollektor-Em itter-Sperrspannung collector-em itter voltage Kollektor-Dauergleichstrom

Contextual Info: APT5020BVR • R A dvanced W .\A pow er Te c h n o l o g y “ soov 26a 0.200Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

Contextual Info: • r R M ADVANCED A P T 10 0 5 0 J V R po w er Te c h n o l o g y 1000v i9a o.sooq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

BFR93AA

Abstract: SOT-23 MARKING T31 transistor BFR91 PF 041158 BFR91 BFR93A BFT93 IEC134
Contextual Info: • ^53^31 0010003 T ■ N AMER P H I L I P S / D I S C R E T E BFR93A SSE D r - s i - n N-P-N 1 GHz WIDEBAND TRANSISTOR N-P-N transistors in a SOT-23 plastic envelope. They are primarily intended for use in v.h.f./u.h.f. broadband amplifiers. The transistors feature:

a2229

Abstract: 2SK1548-01M
Contextual Info: 2SK1548-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F A P -II S E R IE S I Features Outline Drawings ►High speed sw itching ►Low on-resistance ►No secondary breakdow n ►Low driving p ow er * High voltage ► V GSs = ± 3 0 V G uarantee

valve el 520

Abstract: 7Z00 hp 2631 philips bbc rs tube 2AKW
Contextual Info: PHILIPS TBL 6/20 COAXIAL TRIODE fo r use ln A.M., F.M. and te le v is io n t r a n s ­ m it te r s TRIODE COAXIALE pour u t i l i s a t i o n dans em etteurs A.M., F.M. e t de t é l é v i s i o n KOAXIALE TRIODE zur Verwendung ln AM-,FM- und Fernsehsendern