SFE 5,5 MA Search Results

TBA120S

Abstract: fz 79 470 TBA120 TBA 470 tba 120 TBA120AS e fzr Keramikfilter SFE murata filter SFE 10.7 120AS
Contextual Info: FM-ZF-Verstärker mit Demodulator TBA 120 S TBA 120 AS Bipolare Schaltung S ym m etrischer, achtstu fig er V erstärker m it sym m etrischem Koinzidenzdem odulator zur Verstärkung, Begrenzung und Dem odulation von frequenzm odulierten Signalen, beson­ ders g ee ig n e t für den Ton-ZF-Teil in FS-G eräten und als FM -ZF -V erstärker in R u ndfunkge­

BF259

Abstract: bf 233 BF257 BF 235 BF258 BF258-BF259 bf 258 bf 236 A1233
Contextual Info: Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: Video-Endstufen in Schwarz-Weiß- und Farb-FS-Empfängern. Schaltungen mit hoher Betriebsspannung Applications: Video power stages in black and white and colour TV receivers.

TFK u 269

Abstract: BF457 BF459 IC 41 BF bo 913 bf458 din 125a bf 459
Contextual Info: f f i Silicon NPN Epitaxial Planar Transistors Anwendung: Video-Endstufen in Schwarz-W eiß- und Farb-FS-Geräten Application: Video output stages in b la ck and white and co lo u r TV receivers Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

Contextual Info: N AMER P H IL I P S / D I S C R E T E BSE D Jl ftSHlHl QQ17S73 1 • BFQ51C T - 3 /- / 7 P-N-P 2 GHz WIDEBAND TRANSISTOR P-N-P transistor in a sub-miniature H E R M E T IC A L L Y S E A L E D micro-stripline envelope. It is primarily intended for use in u.h.f. and microwave amplifiers such as aerial amplifiers, radar systems, oscilloscopes,

telefunken ra 200 amplifier

Abstract: UBA 4001 BI474 EL3010 tube el 36 telefunken ra 100 telefunken ra 200 2X40 Telefunken tubes A-0601
Contextual Info: Netzröhre für GW-Heizung S Ä EL 3010 T E L E F UN K E N DC-AC-Heating L e is t u n g s p e n t o d e indirectly heated connected in parallel P o w e r p e n to d e Vorläufige technische Daten • Tentative data Z u v e rlä ssig k e it R e lia b ility

SFE 5.5 MC

Contextual Info: T e m ic U2860B-B Semiconductors Dual-Channel FM Sound Demodulator for TV Systems Description The U2860B is a dual-channel FM sound demodulator realized with TEMIC Semiconductors’ advanced bipolar process. All TV FM standards, from 4.5 up to 6.5 MHz standard M, B/G, I, D/K can be processed with high

Contextual Info: s e MIKROn Absolute Maximum Ratings Values Symbol Conditions 1 Units VcES VcGR lc IcM V ges = 20 Toase = 25/85 °C Tease = 25/85 °C; tp = 1 ms P to t per R 1200 1200 1 5 0 /1 0 0 300 / 200 ± 20 700 -4 0 . + 150 125) 2 500 Class F 40/125/56 g e I G B T , T o as e

diode 22 16Q

Contextual Info: APT10M25BVFR • R A dvan ced W /Æ PO W ER Te c h n o l o g y ' io o v POWER MOS V‘ 75a 0 .0 25Q FREDFET Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect,

Contextual Info: • R A dvanced W .\A APT10086B VR pow er Te c h n o lo g y " 1000v i 3a 0.860Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

Contextual Info: APT10M25BVR • R A dvan ced W /Æ PO W ER Te c h n o l o g y ' io o v 75a 0 .0 25Q POWER MOS V‘ Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

BFG51

Contextual Info: N AMER PHILIPS/DISCRETE bb53l31 Q017b7i 0 BFG51 H5E D J T - S I ~ I S~ P-N-P 2 GHz WIDEBAND TRANSISTOR •• » P-N-P transistor in a four-lead dual emitter plastic envelope SOT-103 . This device is designed for application in wideband amplifiers, such as in CATV and M A TV systems, up to 2 GHz.

Contextual Info: APT5020BVR • R A dvanced W .\A pow er Te c h n o l o g y “ soov 26a 0.200Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

Contextual Info: • r R M ADVANCED A P T 10 0 5 0 J V R po w er Te c h n o l o g y 1000v i9a o.sooq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

a2229

Abstract: 2SK1548-01M
Contextual Info: 2SK1548-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F A P -II S E R IE S I Features Outline Drawings ►High speed sw itching ►Low on-resistance ►No secondary breakdow n ►Low driving p ow er * High voltage ► V GSs = ± 3 0 V G uarantee

Contextual Info: A • R W .\A A P T 1 0 M 11 B 2 V R dvanced pow er Te c h n o lo g y " ioov 100a 0.01 i q POWER MOS V‘ Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect,

Contextual Info: • R A dvanced r M po w er Tec h n o lo g y APT501OJ VR soov44a o.-iooq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

apt50m85jvr

Contextual Info: • R ADVANCED APT50M85JVR W /Æ P o w e r Techno lo g y soov soa o.ossq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

Contextual Info: • R A dvanced W .\A p o w e r Te c h n o lo g y " APT6035BVR 600v isa 0.350Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

25C5250

Contextual Info: • R A dvanced W .\A APT501OLVFR pow er Te c h n o lo g y " 500v POWER MOS V 47a 0.1 ooq FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: N ational J u ly 1 9 9 6 S e m ic o n d u c t o r ” NDS8926 Dual N-Channel Enhancement Mode Field Effect Transistor G e n e ra l D e s c r ip tio n F e a tu re s T he s e N -C h a n n e l e n h a n c e m e n t m o d e e ffe c t tra n s is to rs a re p ro d u c e d

BLX92A

Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
Contextual Info: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

Contextual Info: Signetics 74AC/ACT11175 Quad D-Type Flip-Flop w/Reset; Positive-Edge Trigger Preliminary Specification ACL Products FEATURES GENERAL INFORMATION • Output capability: ±24 mA • CMOS AC and TTL (ACT) voltage level Inputs • 50ii incident wave switching

EF804S

Abstract: ef804 ef 804 telefunken ra 200 telefunken tubes
Contextual Info: Netzröhre für GW-Heizung EF 8 0 4 S TELEFUNKEN m indirekt geheizt Parallelspeisung m mm m a m* m mu DC-AC-Heating indirectly heated connected in parallel K lin g - u n d b r u m m ^ , a rm e N F-P e n to d e Z u v e rlä ssig k e it Der P-Faktor gibt den voraussichtlichen Röhren­

Contextual Info: APT40M70JVR • R A dvanced W 'æ p o w e r Te c h n o l o g y ' 400v 53a 0.070q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®