SFE 16 Search Results

Contextual Info: ILH100 SIEMENS HERMETIC PHOTOTRANSISTOR OPTOCOUPLER FE A T U R E S • O p eratin g T e m p e ra tu re R ang e, -5 5 ° C to + 125°C • C u rren t T ran sfe r R atio G u a ra n te ed from -5 5 ° C to + 100°C A m b ie n t T e m p e ra tu re R ang e • H igh C u rren t T ran sfe r R atio a t Low In p u t C u r­

e10.7a

Abstract: sfe 5.5 murata E10.7F sfe10.7mhy E10.7A ceramic SFE10.7MA19 E10,7A SFE10.7MFP SFE10 SFE10.7MA21
Contextual Info: CERAMIC FILTERS LOW LOSS, WIDE OR NARROW BAND, MINIATURE SFE MA/MTE/MVE/MFP 10.7MHz The following filters were developed to offer both narrower and wider bandwidth characteristics for use in products such as DBS receivers. These filters also retain the same reliability

05 911 00

Abstract: f570 91521-1 Leach f370 16-102 nff 16-102 SFE570 Leach f370 Leach f470 socket leach F670 RAILWAY SOCKET BASE
Contextual Info: SERIES SFE*7* ENGINEERING DATA SHEET RAILWAY SOCKET ECONOMICAL STYLE Basic Socket Series Designation for: Series F370, F470, F570, F670 and timers. Coding possibility using keys devices adjustable by the user. To fit with H relay mounting style. GENERAL CHARACTERISTICS

CFW 455

Contextual Info: Filters for Communication Equipment Ceramic Filters CERAFIL •S M D Type (MHz) Type Series Application Features SFE C S10M 8 D • Single type. • 3dB bandwidth is available in ±110kHz, ±135kHz and ±150kHz. •T yp es with 10.8MHz of center frequencies is available.

DIODE 3L2

Abstract: Complementary MOSFET Half Bridge
Contextual Info: e? National February 1996 Semiconductor' NPS8852H Complementary MOSFET Half Bridge Features General Description These Complementary M O SFE T half bridge devices are produced using National's proprietary, high cell density, D M O S technology. This very high density process is especially tailored to

cq24-000

Abstract: Q24060 98l18
Contextual Info: Sfe- -<•' m2 DEVICE SPECIFICATION SERIES BiCMOS LOGIC ARRAYS Q24000 DESCRIPTION The AMCC Q24000 Series of BiCMOS logic arrays is comprised of six products with densities ranging from 720 to 13440 equivalent gates including a structured array with a high performance Phase-Locked Loop*.

MOSFET SMD MARKING CODE 618

Abstract: SMD DIODE MARKING S28 diode smd marking code 421 MARKING CODE CGA smd code marking js smd diode marking JC AN-994 IRL640S SMD-220 42s42
Contextual Info: PD-9.1090 International ioR Rectifier IRL640S HEXFET Power M O SFE T • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs =4V & 5V Fast Switching

660B

Abstract: IRFV460
Contextual Info: Data Sheet No. PD-9.660B INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR ; IRFV460 N-CHANNEL 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power M O SFE T transistors.

100U

Abstract: 120U SFE 8
Contextual Info: Fuseholders In-Line Fuseholders Pb Twist-Lock In-Line Type Product Characteristics 155 100U Series 155 100A Series Dimensions 55.63 2.19" Compatible Fuses For low voltage 3AG or SFE Fuse Applications Electrical Intended for use at 32 volts or less with fuses rated up to 20

Contextual Info: In-Line Cartridge Fuse Holders 155 Series Twist-Lock In-Line Holders for 3AG Fuses Product Characteristics 155 100U 155 100A Compatible Fuses For low voltage 3AG or SFE Fuse Applications Electrical Intended for use at 32 volts or less with fuses rated up to 20

Contextual Info: SSI 32F8144 ¿mmsvskms Programmable Electronic Filter A TDK G roup/C om pany January 1994 DESCRIPTION FEATURES This custom integrated circuit incorporates a pulse equalizer of variable equalization and variable band­ w idth w ith a tran sfe r function of a 2 zero/7 pole linear

100U

Abstract: 120U
Contextual Info: Fuseholders For Low Voltage 3AG or SFE Fuse Applications Twist-Lock In-Line Type SPECIFICATIONS: Electrical: Intended for use at 32 volts or less with fuses rated up to 20 155 100U Series amperes when the proper spring is installed for fuse size. Molded Parts: Black Thermoplastic UL 94V2 .

Contextual Info: PNP EPITAXIAL SILICON TRNSISTOR KSA1370 CRT DISPLAY, VIDEO OUTPUT • High Voltage • Low R everse Tra n sfe r Capacitance: C re = 1.7pF ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage

Contextual Info: Ordering number : ENN6796 N-Channel and P-Channel Silicon MOSFETs MCH6615 ISMÊYOi Ultrahigh-Speed Switching Applications Features Package Dimensions • The M CH 6615 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching M O SFE T s,

Contextual Info: Technical Specifications 1031 Series Fischer Connectors SA Saint-Prex, Switzerland Phone +41 21 800 95 95 Fax +41 21 800 39 24 www.fischerconnectors.com mail@fischerconnectors.ch Multipole Low Voltage Product range covered: S / SC / SA / SV / SOV / SS / SSC / WSO / SF / SFE / SFU / SFPE / SFPU / D / DB / DBP / DBPC / DG / DGP

han e* harting

Contextual Info: A lle Rechte Vorbehalten /All rights reserved S tiff einsafz m ie insert M3x10 Aufnahme fuer Kombi-RasfeLement 09 33 0 0 0 9 9 2 9 slots for fixing elements 09330009929 P la tz fuer Blockkennzeichnung space fo r blockmrking Aufnahme fu e r Bezeichnungsschilder m a x.6 -sfe llig

Contextual Info: KSC3503 NPN EPITAXIAL SILICON TRANSISTOR CRT DISPLAY, VIDEO OUTPUT • High Voltage: V Ceo = 3 0 0 V • Low Reverse T ra n sfe r C apacitance: C re=1.8pF at V c b = 3 0 V ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic Sym bol

6.5S5

Abstract: 5S51 ely transformers I282 A IRFM054 SS452 DD113
Contextual Info: Data Sheet No. PD-9.709A INTERNATIONAL RECTIFIER l O R j AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMQ54 N-CHANNEL 60 Volt, 0.027 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power M O SFE T transistors.

Contextual Info: In-Line Cartridge Fuse Holders 155 Series Heavy-Duty Bayonet Knob In-Line Holders for 3AG Fuses Product Characteristics 155 0xxU 155 0xxA Dimensions 52.83 2.08" 17.53 (.69") Compatible Fuses For Low voltage 3AG or SFE Fuse Applications Electrical Intended for use at 32 volts or less with fuses rated

100U

Abstract: 120U
Contextual Info: Fuseholders For Low Voltage 3AG or SFE Fuse Applications RoHS Pb Twist-Lock In-Line Type SPECIFICATIONS: Electrical: Intended for use at 32 volts or less with fuses rated up to 20 155 100U Series amperes when the proper spring is installed for fuse size. Molded Parts: Black Thermoplastic UL 94V2 .

Contextual Info: Ordering number : ENN6941 ] MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Package Dimensions Features • C om posite type w ith an N -C hannel Sillicon M O SFE T M C H 3405 and a Scholtky B arrier D iode (SB S007M ) contained in one package facilitating high-density

Contextual Info: Littelfuse Fuseholders 1 For Low Voltage 3AG or SFE Fuse Applications RoHSl 0 Twist-Lock In-Line Type SPECIFICATIONS: Electrical: Intended for use at 32 volts or less with fuses rated up to 20 amperes when the proper spring is installed for fuse size. Molded Parts: Black Thermoplastic (UL 94V2).

Contextual Info: Ordering number : ENN7013 ] N-Channel Silicon MOSFET MCH6616 SANYO, Ultrahigh-Speed Switching Applications Features Package Dimensions • Low O N -resistance. • U ltrahigh-speed sw itching. • 2.5V drive. unit : mm 2173A [MCH6616] • C om posite type with 2 M O SFE T s contained in a single

FS-H-711-XX

Abstract: fsh fuse holder 1214C
Contextual Info: 1 2 3 4 5 6 7 8 9 A A B B C C D D SPECIFICATIONS Current rating: Voltage rating: Contact material: Insulating body: Fuse compatibility: Fuse sizes: E F 20 amps max. 250 volts Brass PVC AGC, SFE, JSO, MFA 6.3x30mm and 6.3x32mm Code Wire AWG A 10 B 12, 14 C