SEMIX452GAL126HDS Search Results

SEMIX452GAL126HDS Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SEMiX452GAL126HDs		Semikron	Trench IGBT Modules	Original	PDF	1.28MB	5

SEMIX452GAL126HDS Price and Stock

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SEMIKRON


SEMIKRON SEMIX452GAL126HDS Igbt Module, Single, 1.2Kv, 455A; Continuous Collector Current:455A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Semikron SEMIX452GAL126HDS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SEMIX452GAL126HDS	Bulk			6	1 - 10 $131.40 100 $120.14 1000 $120.14 10000 $120.14	Buy Now
RS	SEMIX452GAL126HDS	Bulk			1	1 $512.53 10 $471.53 100 $471.53 1000 $471.53 10000 $471.53	Get Quote
SEMIKRON SEMIX452GAL126HDS 27890685 Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SEMIX452GAL126HDS 27890685				1	1 $458.64 10 $361.53 100 $325.26 1000 $325.26 10000 $325.26	Get Quote

SEMIX452GAL126HDS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C	Original	SEMiX452GAL126HDs E63iX452GAL126HDs	PDF
Contextual Info: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C	Original	SEMiX452GAL126HDs E63532	PDF
Contextual Info: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX452GAL126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V	Original	SEMiX452GAL126HDs E63532	PDF
discharge diode Contextual Info: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C	Original	SEMiX452GAL126HDs E63532 discharge diode	PDF
Contextual Info: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX452GAL126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V	Original	SEMiX452GAL126HDs SEMiX452GAL126HDs	PDF
Contextual Info: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 455 A Tc = 80°C 319 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 394 A Tc = 80°C 272 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules	Original	SEMiX452GAL126HDs	PDF
SEMIX353GB126V1 Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 Contextual Info: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots	Original	SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1	PDF