SEMIX302GAR Search Results
SEMIX302GAR Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SEMIX302GAR066HD |
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Trench IGBT Modules | Original | 904.45KB | 4 | ||
SEMIX302GAR126HD |
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Trench IGBT Modules | Original | 1.28MB | 4 | ||
SEMIX302GAR12T4S |
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Trench IGBT Modules | Original | 1.07MB | 5 |
SEMIX302GAR Price and Stock
SEMIKRON SEMIX302GAR12E4S (SEMIX SERIES)Igbt Module, Single, 1.2Kv, 463A; Continuous Collector Current:463A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX302GAR12E4S |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SEMIX302GAR12E4S (SEMIX SERIES) | Bulk | 6 |
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SEMIKRON SEMIX302GAR12E4S 27890222Module: IGBT; diode/transistor; buck chopper,thermistor; Ic: 300A |
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SEMIX302GAR12E4S 27890222 | 1 |
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SEMIKRON SEMIX302GAR12E4SPOWER IGBT TRANSISTOR |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SEMIX302GAR12E4S | 1 |
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SEMIX302GAR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GAR12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V |
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SEMiX302GAR12E4s E63532 | |
Contextual Info: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C |
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SEMiX302GAR12E4s E63532 | |
igbt welding
Abstract: SEMIX302GAR
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SEMiX302GAR12T4s E63532 igbt welding SEMIX302GAR | |
Contextual Info: SEMiX302GAR12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
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SEMiX302GAR12T4s E63532 TypEMiX302GAR12T4s | |
Contextual Info: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GAR12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V |
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SEMiX302GAR12E4s SEMiX302GAR12E4s | |
Contextual Info: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
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SEMiX302GAR12E4s E63532 | |
Contextual Info: SEMiX302GAR12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 463 A Tc = 80°C 356 A 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 356 A Tc = 80°C 266 A 900 A -40 . 175 °C Tc = 25°C 356 |
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SEMiX302GAR12T4s | |
Contextual Info: SEMiX302GAR12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
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SEMiX302GAR12E4s E63532 dEMiX302GAR12E4s | |
SEMIX353GB126V1
Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
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SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 |