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    SEMIWELL Search Results

    SEMIWELL Datasheets (170)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N7000
    		SemiWell Semiconductor Logic N-Channel MOSFET Original PDF 695.76KB 6
    2N7002
    		SemiWell Semiconductor Logic N-Channel MOSFET, SOT-23 Original PDF 676.42KB 6
    2N77002
    		SemiWell Semiconductor Logic N-Channel MOSFET Original PDF 676.43KB 6
    BT134-D
    		SemiWell Semiconductor Bi-Directional Triode Thyristor, TO-126 Original PDF 613.56KB 6
    BT134F
    		SemiWell Semiconductor Bi-Directional Triode Thyristor Original PDF 613.42KB 6
    BT134-F
    		SemiWell Semiconductor Bi-Directional Triode Thyristor, TO-126 Original PDF 613.41KB 6
    BT134-F
    		SemiWell Semiconductor Bi- Directional Triode Thyristor Original PDF 621.74KB 6
    BT134-F
    		SemiWell Semiconductor Bi-Directional Triode Thyristor Original PDF 539.25KB 6
    BT136-D
    		SemiWell Semiconductor Bi-Directional Triode Thyristor Original PDF 576.93KB 5
    BT137-600
    		SemiWell Semiconductor Bi-Directional Triode Thyristor TO-220 Original PDF 619.19KB 5
    BT137-600
    		SemiWell Semiconductor Bi-Directional Triode Thyristor Original PDF 623.2KB 5
    BT137F-600
    		SemiWell Semiconductor Bi-Directional Triode Thyristor TO-220F Original PDF 639.98KB 6
    BT137F-600
    		SemiWell Semiconductor Bi-Directional Triode Thyristor Original PDF 644.39KB 6
    BT138-600
    		SemiWell Semiconductor Bi-Directional Triode Thyristor Original PDF 580.42KB 5
    BT138-600
    		SemiWell Semiconductor Bi-Directional Triode Thyristor Original PDF 571.87KB 5
    BT138F-600
    		SemiWell Semiconductor Bi-Directional Triode Thyristor TO-220F Original PDF 638.47KB 6
    BT138F-600
    		SemiWell Semiconductor Bi-Directional Triode Thyristor Original PDF 630.22KB 6
    BT139
    		SemiWell Semiconductor Bi-Directional Triode Thyristor, TO-220 Original PDF 603.05KB 5
    BT139-600
    		SemiWell Semiconductor Bi-Directional Triode Thyristor Original PDF 603.06KB 5
    BT139-600
    		SemiWell Semiconductor Bi-Directional Triode Thyristor Original PDF 608.31KB 5
    ...

    SEMIWELL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SCP10C60

    Contextual Info: SCP10C60 SemiWell Semiconductor Silicon Controlled Rectifiers Symbol 3. Gate Features ▼ ○ ○ 2. Anode Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current IT(RMS = 10 A ) ◆ Low On-State Voltage (1.4V(Typ.)@ ITM) ◆ Non-isolated Type


    Original     		SCP10C60 O-220 O-220 SCP10C60 PDF

    STP8A60

    Contextual Info: STP8A60 SemiWell Semiconductor Bi-Directional Triode Thyristor Symbol ○ 2.T2 Features ▼▲ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current IT(RMS = 8 A ) ◆ High Commutation dv/dt ◆ Non-isolated Type ◆ ○ 1.T1 3.Gate ○ TO-220


    Original     		STP8A60 O-220 O-220 STP8A60 PDF

    mosfet 12V Motor CONTROLER

    Abstract: SFS4936
    Contextual Info: SFS4936 SemiWell Semiconductor Dual N-Channel MOSFET Features • ■ ■ ■ ■ Symbol Low RDS on (0.035Ω )@VGS=10V D2 5 4 G2 Low RDS(on) (0.053Ω )@VGS=4.5V D2 6 3 S2 Gate Charge (Typical 20nC) Improved dv/dt Capability Maximum Junction Temperature Range (150°C)


    Original     		SFS4936 switcSFS4936 mosfet 12V Motor CONTROLER SFS4936 PDF

    SFF4N60

    Contextual Info: SFF4N60 SemiWell Semiconductor N-Channel MOSFET Features RDS on (Max 2.5 Ω )@VGS=10V • Gate Charge (Typical 15nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ ■ 2. Drain { Symbol


    Original     		SFF4N60 O-220F 00x45° 54TYP SFF4N60 PDF

    SCF20C60

    Contextual Info: SCF20C60 SemiWell Semiconductor Silicon Controlled Rectifiers Symbol 3. Gate Features ▼ ○ ○ 2. Anode Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current IT(RMS = 20 A ) ◆ Low On-State Voltage (1.3V(Typ.)@ ITM) ◆ Non-isolated Type


    Original     		SCF20C60 O-220F O-220F SCF20C60 PDF

    SFP7N60

    Abstract: 28nc
    Contextual Info: SFP7N60 SemiWell Semiconductor N-Channel MOSFET Features RDS on (Max 1.2 Ω )@VGS=10V • Gate Charge (Typical 28nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ ■ 2. Drain { Symbol


    Original     		SFP7N60 O-220 95MAX. 54TYP SFP7N60 28nc PDF

    SCF6C60

    Contextual Info: SCF6C60 SemiWell Semiconductor Silicon Controlled Rectifiers Symbol 3. Gate Features 2. Anode Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current IT(RMS = 6 A ) ◆ Low On-State Voltage (1.4V(Typ.)@ ITM) ◆ Isolation Voltage ( VISO = 1500V AC )


    Original     		SCF6C60 O-220F O-220F SCF6C60 PDF

    SFD3055L

    Abstract: mosfet 30V 12A TO 252
    Contextual Info: SFD3055L SemiWell Semiconductor Logic N-Channel MOSFET Features • Symbol Low RDS on (0.15Ω )@VGS=10V { Low RDS(on) (0.30Ω )@VGS=4.5V ■ ■ ■ ■ 2. Drain ● Low Gate Charge (Typical 6.5nC) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (150°C)


    Original     		SFD3055L SFD3055L mosfet 30V 12A TO 252 PDF

    stp12a60

    Abstract: GT1050 STP12A
    Contextual Info: STP12A60 SemiWell Semiconductor Bi-Directional Triode Thyristor Symbol ○ Features 2.T2 ▼▲ Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current IT(RMS = 12 A ) ◆ High Commutation dv/dt ◆ ○ ◆ 1.T1 3.Gate ○ TO-220 General Description


    Original     		STP12A60 O-220 O-220 stp12a60 GT1050 STP12A PDF

    SFF7N60

    Abstract: N-Channel 600V MOSFET
    Contextual Info: SFF7N60 SemiWell Semiconductor N-Channel MOSFET Features RDS on (Max 1.2 Ω )@VGS=10V • Gate Charge (Typical 28nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ ■ ● ◀ 1. Gate{


    Original     		SFF7N60 O-220F 00x45° 54TYP SFF7N60 N-Channel 600V MOSFET PDF

    SFP630

    Contextual Info: SFP630 SemiWell Semiconductor N-Channel MOSFET Features RDS on (Max 0.4 Ω )@VGS=10V • Gate Charge (Typical 19nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ ■ 2. Drain { Symbol


    Original     		SFP630 O-220 O-220 SFP630 PDF

    STF8A60

    Abstract: stf*8a60 THYRISTOR MAR 615
    Contextual Info: STF8A60 SemiWell Semiconductor UL : E228720 Bi-Directional Triode Thyristor Symbol ○ 2.T2 Features ▼▲ ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current IT(RMS = 8 A ) ○ 1.T1 ◆ High Commutation dv/dt ◆ Isolation Voltage ( VISO = 1500V AC )


    Original     		STF8A60 E228720 O-220F O-220F STF8A60 stf*8a60 THYRISTOR MAR 615 PDF

    SBR13003

    Contextual Info: SBR13003 SemiWell Semiconductor High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 1.Base 2.Collector ○ c - Very High Switching Speed Typical 120ns@1.0A - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 200mV@1.0A/0.25A) - Wide Reverse Bias S.O.A


    Original     		SBR13003 120ns 200mV O-126 O-126 SBR13003 PDF

    STP4A60S

    Contextual Info: STP4A60S SemiWell Semiconductor Sensitive Gate Triacs Symbol ○ Features 2.T2 ▼▲ Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current IT(RMS = 4 A ) ◆ High Commutation dv/dt ◆ Sensitive Gate Triggering 4 Mode ◆ Non-isolated Type ◆


    Original     		STP4A60S O-220 O-220 STP4A60S PDF

    STP4A60S

    Abstract: STP4A60
    Contextual Info: Preliminary STP4A60S SemiWell Semiconductor Sensitive Gate Triacs Symbol ○ Features ▼▲ Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current IT(RMS = 4 A ) ◆ High Commutation dv/dt ◆ Sensitive Gate Triggering 4 Mode ◆ Non-isolated Type


    Original     		STP4A60S O-220 O-220 STP4A60S STP4A60 PDF

    SBL13003

    Contextual Info: SBL13003 SemiWell Semiconductor High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 1.Base 2.Collector ○ c - Very High Switching Speed Typical 120ns@1.0A - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 200mV@1.0A/0.25A) - Wide Reverse Bias S.O.A


    Original     		SBL13003 120ns 200mV O-92L SBL13003 PDF

    NPN Transistor 1.5A 700V

    Abstract: SBN13003 SemiWell Semiconductor
    Contextual Info: SBN13003 SemiWell Semiconductor High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 3.Base 2.Collector ○ c - Very High Switching Speed Typical 120ns@1.0A - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 200mV@1.0A/0.25A) - Wide Reverse Bias S.O.A


    Original     		SBN13003 120ns 200mV NPN Transistor 1.5A 700V SBN13003 SemiWell Semiconductor PDF

    SFS9410

    Contextual Info: PRELIMINARY SFS9410 SemiWell Semiconductor Logic N-Channel MOSFET Features • ■ ■ ■ Symbol RDS on (Max 0.028Ω )@VGS=10V D 5 4 G RDS(on) (Max 0.042Ω )@VGS=4.5V D 6 3 S Gate Charge (Typical 18nC) Maximum Junction Temperature Range (150°C) Available in Tape and Reel


    Original     		SFS9410 SFS9410 PDF

    jc 443

    Abstract: STN1A60
    Contextual Info: STN1A60/80 SemiWell Semiconductor Bi-Directional Triode Thyristor Symbol ○ Features 3.T2 ▼▲ Repetitive Peak Off-State Voltage : 600/800V R.M.S On-State Current IT(RMS = 1 A ) ◆ High Commutation dv/dt ◆ ○ ◆ 1.T1 2.Gate ○ TO-92 General Description


    Original     		STN1A60/80 600/800V 50Hz/60013 jc 443 STN1A60 PDF

    BT136/...D

    Abstract: C1306 BT136D
    Contextual Info: Preliminary BT136-D SemiWell Semiconductor Bi-Directional Triode Thyristor Symbol ○ Features 2.T2 ▼▲ Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current IT(RMS = 4 A ) ◆ High Commutation dv/dt ◆ Sensitive Gate Triggering 4 Mode ◆ Non-isolated Type


    Original     		BT136-D O-220 O-220 BT136/...D C1306 BT136D PDF

    SBF13007

    Contextual Info: SBF13007 SemiWell Semiconductor High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 1.Base 2.Collector ○ c - Very High Switching Speed Typical 60ns@5.0A - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 390mV@5.0A/1.0A) - Wide Reverse Bias S.O.A


    Original     		SBF13007 390mV O-220F O-220F SBF13007 PDF

    SBP13007-H2

    Contextual Info: SemiWell Semiconductor SBP13007-H2 High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 1.Base 2.Collector ○ c - Very High Switching Speed Typical 60ns@5.0A - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 390mV@5.0A/1.0A) - Wide Reverse Bias S.O.A


    Original     		SBP13007-H2 390mV O-220 O-220 SBP13007-H2 PDF

    BTA06-600B MAR

    Abstract: BTA06-600B BTA06 application circuit THYRISTOR MAR 615 BTA06-600B equivalent bta06-600
    Contextual Info: Preliminary BTA06-600B SemiWell Semiconductor UL : E228720 Bi-Directional Triode Thyristor Symbol ○ Features 2.T2 ▼▲ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current IT(RMS = 6 A ) ◆ High Commutation dv/dt ◆ Isolation Voltage ( VISO = 1500V AC )


    Original     		BTA06-600B E228720 O-220F O-220F BTA06-600B MAR BTA06-600B BTA06 application circuit THYRISTOR MAR 615 BTA06-600B equivalent bta06-600 PDF

    BT137F-600

    Abstract: MA7010
    Contextual Info: BT137F-600 SemiWell Semiconductor UL : E228720 Bi-Directional Triode Thyristor Symbol ○ Features 2.T2 ▼▲ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current IT(RMS = 8 A ) ◆ High Commutation dv/dt ◆ Isolation Voltage ( VISO = 1500V AC )


    Original     		BT137F-600 E228720 O-220F O-220F BT137F-600 MA7010 PDF