SEMIKRON IGBT 150A 600V Search Results

Contextual Info: SEMiX151GAR12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 232 A Tc = 80°C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 189 A Tc = 80°C 141 A 450 A -40 . 175 °C Tc = 25°C 189

Contextual Info: SEMiX151GAL12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 232 A Tc = 80°C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 189 A Tc = 80°C 141 A 450 A -40 . 175 °C Tc = 25°C 189

semikron IGBT 150A 600v

Contextual Info: SEMiX152GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 229 A Tc = 80°C 177 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 195 A Tc = 80°C 146 A 450 A -40 . 175 °C ICRM = 3xICnom VGES

Contextual Info: SEMiX151GD12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 232 A Tc = 80°C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 189 A Tc = 80°C 141 A 450 A -40 . 175 °C ICRM = 3xICnom VGES

Contextual Info: SEMiX151GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 232 A Tc = 80°C 179 A 450 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 189 A Tc = 80°C 141 A 450 A -40 . 175 °C ICRM = 3xICnom VGES

Contextual Info: SEMiX302GB128Ds Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 283 A Tc = 80°C 201 A 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 231 A Tc = 80°C 159 A ICRM = 2xICnom VGES SEMiX 2s SPT IGBT Modules

Contextual Info: SEMiX251GD126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 242 A Tc = 80°C 170 A 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 207 A Tc = 80°C 143 A ICRM = 2xICnom VGES SEMiX 13 Trench IGBT Modules

Contextual Info: SEMiX252GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 242 A Tc = 80°C 170 A 300 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 228 A Tc = 80°C 158 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules

Contextual Info: SEMiX151GD066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 600 V Tc = 25°C 201 A Tc = 80°C 152 A 300 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25°C 219 A Tc = 80°C 161 A A ICRM = 2xICnom VGES SEMiX 13 Trench IGBT Modules

453gb12e4s

Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
Contextual Info: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1

M200G128

Contextual Info: SKM 200 GB 128 D Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICRM VGES Tvj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IFAV = – IC Tcase = 25 (80) °C

semikron IGBT 150A 600v

Contextual Info: SKM 200 GB 128 D Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C

skm 195 gb 125 dn

Contextual Info: SKM 195 GB 126 DN Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C

skm 195 gb 125 dn

Abstract: M195GB126DN
Contextual Info: SKM 195 GB 126 DN Absolute Maximum Ratings T case = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C I CRM Tcase = 25 (80) °C, tp =1 ms VGES T vj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode I FAV = – I C Tcase = 25 (80) °C

SemiSel

Abstract: SK chopper transformer SKIIP DRIVER skiip gb 120 232GDL120-410CTV
Contextual Info: SKiiP 232GDL120-410CTV I. Power section 3 phase bridge Ts = 25°C unless otherwise specified Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM

IGBT SKM 400 GA 122D SEMIKRON

Abstract: Si 122D semikron IGBT 150A 600v GA122 102D 122D V00E
Contextual Info: 013bb71 □□□3bcm S 1E D - . SEMIKRON INC Absolute Maximum Ratings Symbol Conditions ' Values . 1 0 2 D . 1 2 2 D Units 1000 1200 V 1000 1200 V V ces 20 kn V cgr Rge lc Tease = 2 5 /8 0 °C 2 0 0 /1 5 0 Ic m Tease = 2 5 /8 0 °C 4 0 0 /3 0 0

semikron skiip 20

Abstract: 132Gd SemiSel SK chopper transformer 132GDL120-412CTV 7pack igbt module
Contextual Info: SKiiP 132GDL120-412CTV I. Power section brake chopper Ts = 25°C unless otherwise specified Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin

232GD120-313CTV

Contextual Info: SKiiP 232GD120-313CTV I. Power section Absolute maximum ratings Symbol Ts = 25°C unless otherwise specified Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin

132GH120-212CTV

Contextual Info: SKiiP 132GH120-212CTV I. Power section Absolute maximum ratings Symbol Ts = 25°C unless otherwise specified Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin

132GD120-318CTV

Abstract: semikron skiip 20 132-gd120 IC-125A semikron IGBT 150A 600v
Contextual Info: SKiiP 132GD120-318CTV I. Power section Absolute maximum ratings Symbol Ts = 25°C unless otherwise specified Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin

semikron IGBT 150A 600v

Abstract: 232GH120-210CTV
Contextual Info: SKiiP 232GH120-210CTV I. Power section Absolute maximum ratings Symbol Ts = 25°C unless otherwise specified Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin

232GDL120-410CTV

Abstract: skiip 24
Contextual Info: SKiiP 232GDL120-410CTV I. Power section 3 phase bridge Ts = 25°C unless otherwise specified Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM

tyco igbt module 25A

Abstract: tyco igbt module 25A 1200V tyco igbt module 15A tyco igbt module 35A V23990-P600-I19-PM p719 flowPACK tyco igbt module 35A 1200V MiniSKiiP IPM AC 126
Contextual Info: Power Modules Standard Power Module Solutions Vincotech is one of the market leaders in Power Modules.Target applications include motor drives, power supplies and welding equipment.With 13 different standard housings and more than 35 standard product families, Vincotech offers a wide power range

CALCULATION SemiSel 3.1

Abstract: semikron skiip3 DIN 5463 usage of skiip CALCULATION SemiSel skiip gb 120 semikron skiip vf group semikron skiip 81 AN 15 T B DIN 5463 semikron IGBT, 1200V, 600A, H bridge
Contextual Info: Usage of SKiiP Systems 10. Dezember 2002 Seite: 1 von: 16 Usage of SKiiP Systems SEMIKRON integrated intelligent Power 1 2 3 4 Main features of SKiiP2 and SKiiP3 Systems . 2