SEMELAB BCY71 Search Results

BCY71 BS

Contextual Info: BCY71 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

2n3866s

Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
Contextual Info: M il / Aerospace Division Sem elab HERMETIC SURFACE MOUNT PACKAGES SEMELAB offers seven ceramic package styles intended for use in Space Vehicles, Aircraft and other critical applications all intended for Surface Mount Applications. SOT23 HERMETIC CERAMIC SURFACE MOUNT PACKAGE LCC1

BD106

Abstract: BD107A BCY91 BCY39A BCY56 t01b 250M BCY40A BCY58 BCY59
Contextual Info: 37E D SEMELAB LT» 0133107 GQQ0037 3 • SflLB l-L. , ;V - r |- L i -, '-'.- - ' V ^ »■— T - A i* r r m l . 'i ? * * - . Reliability Option Polarity BCY39A BCY40A BCY56 BCY58 BCY59 HI-REL HI-REL S C REEN HI-REL HI-REL PNP PNP NPN NPN NPN TO 5 TO 5 TOI 8

BCY72

Abstract: BCY70 equivalent BCY70 BCY71 semelab bcy71 transistor bcy70
Contextual Info: BCY70 BCY71 BCY72 GENERAL PURPOSE PNP SILICON TRANSISTOR MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. DESCRIPTION The BCY70, BCY71 & BCY72 are silicon

BCY71DCSM

Abstract: LE17
Contextual Info: SILICON EPITAXIAL PNP TRANSISTOR BCY71DCSM • Low Current / Low Voltage Transistor In A Dual Ceramic Hermetic Package • Designed For General Purpose Industrial Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

Contextual Info: SILICON EPITAXIAL PNP TRANSISTOR BCY71DCSM • Low Current / Low Voltage Transistor In A Dual Ceramic Hermetic Package • Designed For General Purpose Industrial Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

250M

Abstract: BCY71DCSM
Contextual Info: BCY71DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

BCY70

Abstract: BCY71 BCY72 transistor bcy70 BCY70CSM BCY71CSM BCY72CSM bcy71 compatible
Contextual Info: BCY70CSM BCY71CSM BCY72CSM MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) 3 2 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR 1 1.91 ± 0.10 (0.075 ± 0.004)

Contextual Info: BCY70CSM BCY71CSM BCY72CSM MECHANICAL DATA Dimensions in mm inches 0.31 rad. (0.012) 3 2 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR 1 1.91 ± 0.10 (0.075 ± 0.004)

BC560AP

Abstract: 2sa720 semi KT313A LOW-POWER SILICON PNP BC212AP KT313B BC454C 2SA1115 tBc560b MM1614
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 BCY79A BCY79A A5T3504 2N4452 2N4452 2N4452 BCl77-6 BCl77-6 BCY79B BCY79B ~g~~~~111 15 20 BCl77B BC204B BC416A BC416B BC416AP BC416P BC251B BC261B ~g~~~~ 25 30 BCY79C BC416BP BCX79X BC251C BC251C

BZX85C12V

Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Contextual Info: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK