SEME Search Results

LM79XX

Abstract: LM7900 - 220M Series
Contextual Info: SEMELAB NEW PRODUCT LM 7900-220M SERIES NEGATIVE VOLTAGE REGULATOR TO 220 METAL MECHANICAL DATA D im ension s in m m FEATURES • HERMETIC TO 220 METAL PACKAGE • HIGH RELIABILTY • ISOLATED OPTION • MILITARY OPTION • SCREENING OPTIONS • O U TP U T CURRENT UP TO 1 5A

Contextual Info: m o le x SEMES 66 BEAU Terminal Blocks .500" PCB Tri-Barrier Terminal Strip, 600V Description Features The series 66, PCB tri-barrier terminal strip is today, the only 600 volt, 45 Amp UL and CSA rated terminal block for printed circuit board mounting. The terminal block provides an

Contextual Info: mi = ^ = llll IRF450 SEME LAB MECHANICAL DATA D im ensions in m m inches N-CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40(1.197) 30.15(1.187) 17.15 (0.675)_ 16.64 (0.655) 500V V DSS ^D(cont) _ * 0 ? (0.161) 3.84 (0 .Ï5 Ï) dia. 2 pics. -JL o o a ; 2- •—

BUP36

Abstract: D00D1 LE17 5018
Contextual Info: SEMELAB LTD 37E J> 3133107 GDODIMD SEMELAB SILICON NPN EPITAXIAL PLANAR 2h- u FEATURES —Ì a 21 X mai 12.7 max. • High breakdown voltage • W ide area of secondary breakdown • Very fast switching • High reliability j t “ 1.6 SOT-93 ABSOLUTE MAXIMUM RATINGS AT 25°C

Sot-220

Abstract: 1121t B1331 BUP42 LE17 npn 10a 800v a1023 S7100
Contextual Info: 3 7E SEMELAB LTD D • B1331A7 ■ G00015S SEMELAB -1 X \ BUP 42 SILICON NPN EPITAXIAL PLANAR MECHANICAL DATA Dimensions in mm 10.3 max. 3.6 p. è L|. « I I 1.3 r 15.8 ¿.5max FEATURES 5 .9 • HIGH BREAKDOWN VOLTAGE min. • HIGH RELIABILITY max. • WIDE AREA OF SAFE OPERATION

BUP34

Abstract: LE17 900Volts
Contextual Info: SEMELAB LTD 3?E J> m 0133107 Q00Q13M SEP/ÏELAB JUÜ 'Ì 9 >937 3 /VJ3 'y ^ '\ BUP34 NEW PRODUCT SILIC O N N PN MECHANICAL DATA EPITAXIAL PLANAR 10.3. max. 1.3 3.6 2.8 ¿.5max. b-/txx ¥ 5.9 w min. FEATURES 15.8 max. • Very high breakdown voltage L}_. • Low Cob

BUP39

Abstract: 0121 LE17 t387
Contextual Info: SEMELAB LTD 37E D • Ô1331Ô7 00QQ14b & ■ SMLB _ V SEMELAB SILIC O N N PN MECHANICAL DATA EPITAXIAL PLANAR FEATURES • High breakdown voltage • Wide area of secondary breakdown • Very fast switching • High reliability SOT-93 ABSOLUTE MAXIMUM RATINGS AT 25°C

D1284

Contextual Info: TetraFET D1284UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm inches 9.65 10.66 4.82 5.33 3.83 Dia. 4.08 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 12V – 200MHz SINGLE ENDED 4.19 4.82 1.14 1.39 2.66 3.42 1.01 Rad. 1.52

common anode schottky to220

Abstract: Schottky diode TO220 common cathode to220 Schottky com anode TO220 SB30 40RM SCHOTTKY 20A 40V SB30-40AM SB30-40M SB30-40RM
Contextual Info: SB30-45M SB30-45AM SB30-45RM SEME LAB SB30-40M SB30-40AM SB30-40RM MECHANICAL DATA Dimensions in mm 4.6 1 0.6 DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI–REL APPLICATIONS 1 0 .6 3.6 Dia. 1 3 .5 16.5 0.8 1 23 1 3 .7 0 FEATURES • HERMETIC TO220 METAL PACKAGE

BUP38

Abstract: LE17
Contextual Info: - SEMELAB 37E LTD Û1331Û7 D Q0QQ14M ISMLB •1 S E M E LA B JUN 2 6 1987 4 'S m g - i , 4Î T - 3 3-13 -• 1 BUP38 SILICO N N P N MECHANICAL DATA EPITAXIAL PLANAR FEATURES =j—r T 12.7 21 • High breakdown voltage imi • Wide area of secondary breakdown

BUZ50A

Abstract: BUZ50B LE17 Diodi IR 50A-220M
Contextual Info: 3 7E SEMELAB LTD D 0133107 OOODEST T • SMLB ' DEC 3 1 1987 <2A^ SEMELAB BUZ 50A -220M BUZ 50B -220M NEW PRODUCT MOS POWER N -C H A N N E L ENHANCEMENT MODE TO 220 METAL MECHANICAL DATA Dimensionsin mm FEATURES • HERMETIC TO 220 METAL PACKAGE T t <5- • HIGH RELIABILTY

EM 1455 A

Abstract: TL 2N2222A npn transistor 2N2222A 2N2907A HCT700
Contextual Info: SEME HCT700 LAB MECHANICAL DATA Dimensions in mm inches COMPLEMENTARY SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS LCC2 – Ceramic Surface Mount Package FEATURES 2 3 1 4 A 6 0.23 rad. (0.009)

2N5664SMD

Contextual Info: SEME 2N5664SMD LAB MECHANICAL DATA Dimensions in mm inches  3 .6 0 (0 .1 4 2 ) M a x . FEATURES ! • HIGH VOLTAGE 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 1 0 .6 9 (0 .4 2 1 )

SMRF1001

Contextual Info: TetraFET SEME SMRF1001 LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz PUSH – PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN PIN 1 SOURCE COMMON PIN 2 DRAIN 1 PIN 3 DRAIN 2 PIN 4 GATE2

fast switching pnp transistor 3A 60V

Abstract: SJ5438 TO63 package
Contextual Info: SEME SJ5438 LAB MECHANICAL DATA Dimensions in mm inches PNP DRIVER TRANSISTOR 6.35 (0.250) 8.64 (0.340) 2 11.94 (0.470) 12.70 (0.500) 1 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 3.86 (0.145) rad. 14.48 (0.570) 14.99 (0.590) 24.33 (0.958) 24.43 (0.962) 3.68

IP78M12ADP

Abstract: IP78M12DP IP78M12DPA
Contextual Info: IP78M12ADP IP78M12DPA SEME LAB MECHANICAL DATA 3 TERMINAL LOW CURRENT 12 VOLT POSITIVE VOLTAGE REGULATOR Dimensions in mm inches 6.35 (0.250) 5.33 (0.210) 2.29 (0.090) 0.89 (0.035) 2 pls. 3 7˚ ± 1˚ 7˚ ± 1˚ 1.14 (0.045) 0.64 4.32 (0.170) (0.025) 2 • 0.01%/V LINE REGULATION

Contextual Info: SEME IRFN240 LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 1.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 200V 13.9A Ω 0.180Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF

infra red sensors

Abstract: Aspheric Lens TO Can bandpass filter PLC biconvex lens
Contextual Info: SYSTEMS DIVISION PLASTIC OPTICAL COMPONENTS IMAGING AND NON-IMAGING PLASTIC OPTICAL COMPONENTS DESCRIPTION FEATURES: Due to customer requests Semelab has developed the capability to design and supply polymer based optical components. These devices can be used to complement the

MC1010

Abstract: MC10514 MC10515 C101 MC10102 MC10103 MC10105 MC10106 MC1011 MC10110
Contextual Info: MECL 10.000 semes INTEGRATED CIRCUITS FROM MOTOROLA M C10,100/10,200 Series -30 to +85°C WIC10,500/10,600 Series (-55 to +125°C) C ircu it design w ith M E C L 1 0 ,0 0 0 is u nusually co n ­ venient. The differential am plifier in p ut and emitterfollow er ou tp u t perm it high fanout, the w ired-O R option,

MC10100

Abstract: C101 MC10102 MC10103 MC10105 MC10106 MC1011 MC10110 MC10114 MC10115
Contextual Info: MECL 10.000 semes INTEGRATED CIRCUITS FROM MOTOROLA MC10,100/10,200 Series -30 to +85°C WIC10,500/10,600 Series (-55 to +125°C) C irc u it design w ith M E C L 1 0 ,0 0 0 is u nusually con­ venient. The d iffe re n tia l a m p lifie r in p u t and e m itte rfo llo w e r o u tp u t p e rm it high fa n o u t, th e w ired-O R o p tio n ,

BC477A

Abstract: 150M
Contextual Info: BC477A Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 80V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

BSX52A

Contextual Info: BSX52A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 50V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

CV7477

Contextual Info: CV7477 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products

CV10806

Contextual Info: CV10806 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products