SEM 3040 IC Search Results

sem 3040 ic

Contextual Info: HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V261S/L In te g ra te d D e v ic e T e c h n o lo g y , In c. FEATURES: • • • • • True Dual-Ported m em ory cells which allow sim ulta­ neous access of the sam e m em ory location H igh-speed access

sem 3040

Abstract: DSC-3040 A12L A13L IDT70V261 IDT70V261L IDT70V261S IDT70V261PF
Contextual Info: HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. Low-power operation – IDT70V261S Active: 300mW (typ.)

sem 3040

Abstract: DSC-3040 A12L A13L IDT70V261 IDT70V261L IDT70V261S IDT70V261PF 70V261L
Contextual Info: HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. Low-power operation – IDT70V261S Active: 300mW (typ.)

sem 3040

Abstract: DSC-3040 A12L A13L IDT70V261 IDT70V261L IDT70V261S 70V261L
Contextual Info: PRELIMINARY IDT70V261S/L HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • True Dual-Ported memory cells which allow simultaneous access of the same memory location • High-speed access — Commercial: 25/35/55ns max.

sem 3040

Abstract: A13L IDT70V261 IDT70V261L IDT70V261S
Contextual Info: HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Š Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.) Low-power operation

sem 3040

Abstract: DSC-3040
Contextual Info: HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Š Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 25/35/55ns max. – Industrial: 25ns (max.) Low-power operation

sem 3040 ic

Contextual Info: 1 HIGH-SPEED 3.3V 16K X 16 DUAL-PORT STATIC RAM WITH INTERRUPT dt PRELIMINARY IDT70V261S/L Integrated De vice Technology, Inc. FEATURES: • • True Dual-Ported m em ory cells w hich allow sim ulta­ neous access of the sam e m em ory location • H igh-speed access

sem 3040 ic

Abstract: sem 3040 ic all data
Contextual Info: I N T E G R A T E » D E VI CE bflE D • M Ô 5 S 77 1 0 0 1 4 3 7 2 47b ■ IDT HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM Integrated Device Technology. Inc FEATURES: PRELIMINARY IDT70V261S/L • M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave

sem 3040 ic

Abstract: DSC-3040
Contextual Info: P > Integrated Device Technology, Inc. HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM FEATURES: PRELIMINARY IDT70V261S/L more using the Master/Slave select when cascading more than one device M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave

Contextual Info: HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM F e a tu re s * * True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access - * ♦ ♦ ♦ ♦ Low-power operation - ♦ Commercial: 25/35/55ns max. IDT70V261S

Contextual Info: HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V261S/L Integrated Device Technology, Inc. FEATURES: • M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave • Interrupt Flag • Devices are capable of withstanding greater than 2001V

sem 3040

Contextual Info: m PRELIMINARY IDT70V261S/L HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. • M/S = H for BUSY output flag on Master M/S = L for BUSY input on Slave • Interrupt Flag • Devices are capable of withstanding greater than 2001V

Contextual Info: 12E D I b3b7HSS Q071bQ7 3 | MOTOROLA SC -CDI0DES/0PT03- T -0 3 -II MOTOROLA SEM ICONDUCTOR TECHNICAL DATA A dvan ce In form ation SCHOTTKY RECTIFIERS SWITCHMODE RECTIFIERS 0.5 AMPERE 30-40 VOLTS . . . designed for use in switching power supplies, inverters, and

Contextual Info: s e MIKRO n V rsm Rectifier Diodes Ifav sin. 180; Tease — 7 5 °C V rrm V 1550 A 400 SKN 1500/04 SKN 1500 SKN 2000 2 00 0 A SKN 2000/06 600 1200 SKN 1500/12 SKN 2000/12 1600 SKN 1500/16 SKN 2000/16 2 000 SKN 2000/20 2400 SKN 1500/20 SKN 1500/24 2 900

Contextual Info: R e v is io n s Tolerances A p p ro v e d D a te M .H . D e s c r i p t io n / A p p r o v e d / D a t e 1- 20= + /- 0.2 C hecked D a te M .H . 20-30=+/-0.3 30-40=+/-0.4 40-50=+/-0.5 D ra w n D a te 0 8 /2 3 /2 0 0 7 T . J .A . 50-100=+/-0.75 100-300=+/-1.5

Contextual Info: Tolerances Revisions Description/Approved/Date Approved 1- 20= + /- 0.2 1 . L e n g th c h a n g e d fr o m 10 t o 1 0 .3 m m Checked 20-30=+/-0.3 30-40=+/-0.4 40-50=+/-0.5 50-100=+/-0.75 100-300=+/-1.5 Angles=+/-1 Dimensions are in Millimeters Date M .H .

Contextual Info: R e v is io n s A p p ro v e d Tolerances D e b c rl p t Io n /A p p ro v e d /D a te 1- 20= + / - 0.2 1 . P a rt le n q th , b o d y , c rim p stem / M.H. 20-30=+/-0.3 1 1 /1 4 /0 0 C hecked D a te M .H . 0 3 /1 2 /0 2 1 1 /1 4 /0 0 D ra w n 30-40=+/-0.4

Contextual Info: R e v is io n s Tolerances A p p ro v e d D a te M .H . D e s c r i p t io n / A p p r o v e d / D a t e 0 7 /0 2 /0 3 1- 20= + / - 0.2 0 7 /0 2 /0 3 M .H . 20-30=+/-0.3 30-40=+/-0.4 D ra w n 40-50=+/-0.5 NO TE S plating thickness 5. P e r M IL-P-19468 9. Nickel pi. 100 m in. over

LS 2027 Final Audio

Abstract: LS 2027 audio DATA SHEET 2025h TAA 611 T12 SAB 2024 schematic diagram lcd monitor dell 16 bit 8096 microcontroller architecture 8096 microcontroller architecture application LS 2027 MDA 2020
Contextual Info: S IE M E N S ICs for Communications Joint Audio Decoder-Encoder JADE PSB 7280 Version 2.2 Preliminary Data Sheet 8.96 This Material Copyrighted By Its Respective Manufacturer T7280-XV22-D1-7600 PSB 7280 R evision H istory 8.96 Previous Releases:none Page Subjects changes since last revision

sem 3040

Abstract: sem 3040 ic Dp83233
Contextual Info: ÌO/IOOBASE-T MAGNETICS MODULE Pulse A TECHNITROL Designed for Transmission UTP-5 Cable COMPANY Combines 10Base-T and 100Base-TX signals for a one-connector port Designed to withstand infrared and vapor phase soldering Pick and place compatible Low profile, surface mount package

sem 3040

Contextual Info: DEVICE SPECIFICATION FEATURES GENERAL DESCRIPTION Micro-power Bipolar technology Complies with ANSI, Bellcore, and ITU-T specifications for jitter tolerance, jitter transfer and jitter generation On-chip high frequency PLL with internal loop filter for clock recovery

1N SERIES DIODE

Abstract: Zener Diode LT 432 MOTOROLA ZM 1N zener diode 1n 3016 b
Contextual Info: MOTOROLA SC Tb -CDIODES/OPTOÏ ¿7 DE 1 1 3 b 75S S □□7flDlb ö | 1N3821thru 1N3830 MOTOROLA S E R IE S SEM ICO N DU CTO R 1N3016 thru 1N3051 TECHNICAL DATA S E R IE S .^ D c ' s ig n c ii^ iW r t t a S h e o i 1.0 W A T T 1.0 WATT M ETA L SILICON ZEN ER DIODES

Contextual Info: DEVICE SPECIFICATION FEATURES Micro-power Bipolar technology Complies with ANSI, Bellcore, and ITU-T specifications for jitter tolerance, jitter transfer and jitter generation On-chip high frequency PLL with internal loop filter for clock recovery Supports clock recovery for OC-48/STM-16

D033

Abstract: A1 D036
Contextual Info: T O S H IB A THMY6432G1EG-75 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6432G1EG is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.